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    TRANSISTOR 160V 1.5A PNP Search Results

    TRANSISTOR 160V 1.5A PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 160V 1.5A PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D1918

    Abstract: No abstract text available
    Text: 2SD1918 Datasheet NPN 1.5A 160V Middle Power Transistor lOutline Parameter Value VCEO IC 160V 1.5A CPT3 Collector Base Emitter 2SD1918 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1275 3) High voltage : VCEO=160V


    Original     		PDF 2SD1918 SC-63) OT-428> 2SB1275 D1918 R1102A D1918

    B1275

    Abstract: No abstract text available
    Text: 2SB1275 Datasheet PNP -1.5A -160V Middle Power Transistor lOutline Parameter Value VCEO IC -160V -1.5A CPT3 Collector Base Emitter 2SB1275 SC-63 <SOT-428> lFeatures 1) Suitable for Middle Power Driver 2) Complementary NPN Types : 2SD1918 3) High voltage : VCEO= -160V


    Original     		PDF 2SB1275 -160V -160V SC-63) OT-428> 2SD1918 B1275 B1275

    2SC1502

    Abstract: a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


    Original     		PDF EN2101E 2SA1507/2SC3902 2SA1507 2SC1502 a1507 2SC 143 SANYO C3902 2SA1507 2SC3902 TO126ML 2sa1507 Sanyo Semiconductor transistor 160v 1.5a pnp

    Untitled

    Abstract: No abstract text available
    Text: 2SA1507/2SC3902 Ordering number : EN2101E SANYO Semiconductors DATA SHEET 2SA1507/2SC3902 PNP / NPN Epitaxial Planar Silicon Transistor 160V / 1.5A Switching Applications Applications • Color TV audio output, converters, inverters Features • • • Large current capacity


    Original     		PDF 2SA1507/2SC3902 EN2101E 2SA1507

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMDType DIP Type PNP Silicon Transistor 2SB649A Features Collector-Emitter Voltage :-160V Collector Current :-1.5A 1 Emitter 2 Collector 3 Base Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO -180 V


    Original     		PDF 2SB649A -160V -55to -10mA, -600mA -50mA -150mA -500mA 150mA

    transistor 160v 1.5a pnp

    Abstract: 2SD669 2SB649A 2SD669A
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649A DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-160V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669A


    Original     		PDF 2SB649A -160V 2SD669A -10mA -500mA; -50mA -150mA -160V; -500mA transistor 160v 1.5a pnp 2SD669 2SB649A 2SD669A

    c4027

    Abstract: No abstract text available
    Text: Ordering number : EN2262F 2SA1552/2SC4027 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat) (PNP)NPN Single TP/TP-FA Applications • Converters, inverters, color TV audio output Features • • • High voltage and large current capacity


    Original     		PDF EN2262F 2SA1552/2SC4027 2SA1552 2SC4027-applied 2SA1552 c4027

    2sc3902

    Abstract: 2sa1507 EN2101E
    Text: Ordering number : EN2101E 2SA1507/2SC3902 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Color TV audio output, converters, inverters Features • • • Large current capacity • Adoption of FBET and MBIT process


    Original     		PDF EN2101E 2SA1507/2SC3902 O-126ML 2SA1507 180where 2sc3902 2sa1507 EN2101E

    C4614

    Abstract: No abstract text available
    Text: Ordering number : EN3578A 2SA1770/2SC4614 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of MBIT process High breakdown voltage and large current capacity ( )2SA1770 Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF EN3578A 2SA1770/2SC4614 2SA1770 C4614

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN2007C 2SA1419/2SC3649 Bipolar Transistor http://onsemi.com – 160V, (–)1.5A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s


    Original     		PDF EN2007C 2SA1419/2SC3649 2SA1419 250mm2

    2SA2005

    Abstract: 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20
    Text: 2SC5511 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SC5511 zStructure NPN Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.


    Original     		PDF 2SC5511 O-220FN 150MHz, 100MHz) 2SA2005 2SA2005 2SA200 2SC5511 transistor 160v 1.5a pnp transistor 160v 1.5a npn 2SA20

    2SA20

    Abstract: 2SA2005 velosity
    Text: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation 160V, 1.5A 2SA2005 Structure PNP Silicon Epitaxial Planar Transistor External dimensions (Unit : mm) ÌÑóîîðÚÒ ìòë ïðòð íòî Features 1) Electrical characteristics of DC current gain hFE is flat.


    Original     		PDF 2SA2005 150MHz, 100MHz) 2SA20 2SA2005 velosity

    transistor 649A

    Abstract: H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A117AJ-00 芯片厚度：240±20µm 管芯尺寸：1170x1170µm 2 焊位尺寸：B 极 272×192µm 2；E 极 226×298µm 2


    Original     		PDF 100mm A117AJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649a HS649A H649 transistor 160v 1.5a pnp 2SB649A

    transistor 649A

    Abstract: H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00
    Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 649A 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸：4 英寸（100mm） 芯片代码：A080BJ-00 芯片厚度：240±20µm 管芯尺寸：800x800µm 2 焊位尺寸：B 极 124×124µm 2；E 极 221×110µm 2


    Original     		PDF 100mm A080BJ-00 2SB649AHS649AH649A O-126TO-126ML -180V -160V transistor 649A H649A 649A H649 HS649A 2SB649A transistor 160v 1.5a pnp A080BJ-00

    2SB669

    Abstract: 2SB669A 2SB649AL 2SB649 2sb649a
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP EPITAXIAL SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 *Pb-free plating product number:2SB649/AL ORDERING INFORMATION


    Original     		PDF 2SB649/A 2SB669/A O-126 2SB649/AL 2SB649-x-T60-A-K 2SB649L-x-T60-A-K 2SB649A-x-T60-A-K 2SB649AL-x-T60-A-K O-126 2SB669 2SB669A 2SB649AL 2SB649 2sb649a

    2sa2005

    Abstract: 2SC5511 transistor 160v 1.5a pnp velosity
    Text: 2SA2005 Transistors For Audio Amplifier output - TV Velosity Modulation −160V, −1.5A 2SA2005 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 2.8 8.0 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Electrical characteristics of DC current gain hFE is flat.


    Original     		PDF 2SA2005 -160V, O-220FN -160V 150MHz, 100MHz) 2SC5511 2sa2005 2SC5511 transistor 160v 1.5a pnp velosity

    2SB669

    Abstract: 2SB649AL 2SB669A 2SB649 2SB649A 126-C
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-126C 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL


    Original     		PDF 2SB649/A OT-89 2SB669/A O-126 O-126C 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T6C-K 2SB649L-x-T6C-K 2SB669 2SB649AL 2SB669A 2SB649 2SB649A 126-C

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SB649/A PNP SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR 1 SOT-89 APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB669/A 1 TO-126 1 TO-92 *Pb-free plating product number: 2SB649L/2SB649AL


    Original     		PDF 2SB649/A OT-89 2SB669/A O-126 2SB649L/2SB649AL 2SB649-x-AB3-R 2SB649L-x-AB3-R 2SB649-x-T60-K 2SB649L-x-T60-K 2SB649-x-T92-B

    transistor 2sb649

    Abstract: transistor 160v 1.5a pnp 2SB649 2SD669
    Text: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB649 DESCRIPTION •High Collector Current-IC=-1.5A ·High Collector-Emitter Breakdown Voltage: V BR CEO=-120V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Complement to Type 2SD669


    Original     		PDF 2SB649 -120V 2SD669 -10mA -500mA; -50mA -150mA -160V; -500mA transistor 2sb649 transistor 160v 1.5a pnp 2SB649 2SD669

    transistor H 649A

    Abstract: No abstract text available
    Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor H 649A

    transistor 649A

    Abstract: 101B WTM649A
    Text: WTM649A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM649A OT-89 WTM649A -160V, 01-Aug-05 OT-89 500TYP transistor 649A 101B

    transistor 669A

    Abstract: h 669A wtc66 101B 669a transistor 160v 1.5a pnp
    Text: WTM669A PNP Epitaxial Planar Transistors SOT-89 P b Lead Pb -Free 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25˚C) Symbol Limits Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO


    Original     		PDF WTM669A OT-89 WTM669A -160V, 01-Aug-05 WTM649A OT-89 500TYP transistor 669A h 669A wtc66 101B 669a transistor 160v 1.5a pnp

    2Sd649A

    Abstract: 0038a 2sb649a
    Text: PJB649A PNP Epitaxial Silicon Transistor • • Complementary pair with PJD669A *Value at Tc $ 25°C TO-126 ABSOLUTE M AXIM U M RATINGS TA = 25 °C Item Symbol 2SB649A Unit Collector to base voltage V CBO -180 V Collector to emitter voltage V CEO -160 V


    OCR Scan     		PDF PJB649A PJD669A O-126 2SB649A 2SD649A 0038a

    IRF9210

    Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
    Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF


    OCR Scan     		PDF 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1