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    TRANSISTOR 1BW 25 Search Results

    TRANSISTOR 1BW 25 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1BW 25 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

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    Abstract: S4826 transistor 1BW pdf of 741 ic S4825 KPIC1033E01 SE-171 transistor 1BW 45
    Text: PHOTO IC Photo IC S4825, S4826 Miniature package photo IC S4825 and S4826 are digital output photo ICs consisting of a high-sensitivity photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated on one chip molded into a miniature visible-cut plastic package.


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    PDF S4825, S4826 S4825 S4826 S4825: S4826: SE-171 KPIC1033E01 1BW TRANSISTOR transistor 1BW pdf of 741 ic KPIC1033E01 transistor 1BW 45

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    Abstract: S5768 S5767 SE-171
    Text: PHOTO IC Low-voltage operation photo IC S5767, S5768 Operation at low voltage from 2.2 V S5767 and S5768 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated in a single chip and molded into a clear plastic package.


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    PDF S5767, S5768 S5767 S5768 S5767: S5768: SE-171 KPIC1037E02 1BW TRANSISTOR

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    Abstract: S5767 S5768 SE-171 transistor uw transistor 1BW
    Text: PHOTO IC Low-voltage operation photo IC S5767, S5768 Operation at low voltage from 2.2 V S5767 and S5768 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated in a single chip and molded into a clear plastic package.


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    PDF S5767, S5768 S5767 S5768 S5767: S5768: SE-171 KPIC1037E01 1BW TRANSISTOR transistor uw transistor 1BW

    S4825

    Abstract: No abstract text available
    Text: PREVIOUS DATA PHOTO IC Photo IC S4825, S4826 Miniature package photo IC S4825 and S4826 are digital output photo ICs consisting of a high-sensitivity photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated on one chip molded into a miniature visible-cut plastic package.


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    PDF S4825, S4826 S4825 S4826 S4825: S4826: SE-171 KPIC1033E01

    1bw transistor

    Abstract: S5767-100
    Text: Low-voltage operation photo IC S5767-100 S5768-100 Operation at low voltage from 2.2 V The S5767-100 and S5768-100 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated in a single chip and molded into a clear plastic package.


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    PDF S5767-100 S5768-100 S5768-100 S5767-100: S5768-100: SE-171 KPIC1037E04 1bw transistor

    Untitled

    Abstract: No abstract text available
    Text: PHOTO IC Low-voltage operation photo IC S5767, S5768 Operation at low voltage from 2.2 V S5767 and S5768 are digital output photo ICs consisting of a photodiode, an amplifier, a schmitt trigger circuit and an output transistor, all integrated in a single chip and molded into a clear plastic package.


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    PDF S5767, S5768 S5767 S5768 S5767: S5768: SE-171 KPIC1037E05

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    Abstract: transistor 1BW transistor 1BW 17
    Text: PHOTO IC Low-voltage operation photo IC S7610-10 High reliability photo IC operable at 2.2 V S7610-10 is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining


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    PDF S7610-10 S7610-10 L6895-10 SE-171 KPIC1027E02 1bw transistor transistor 1BW transistor 1BW 17

    transistor 1BW

    Abstract: 1BW TRANSISTOR KPIC1027E01 L6895-10 S7610-10 SE-171 transistor 1BW 17
    Text: PHOTO IC Low-voltage operation photo IC S7610-10 High reliability photo IC operable at 2.2 V S7610-10 is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining


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    PDF S7610-10 S7610-10 L6895-10 SE-171 KPIC1027E01 transistor 1BW 1BW TRANSISTOR KPIC1027E01 L6895-10 transistor 1BW 17

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    Abstract: transistor 1bw Keithley 195a S3931 C5923 S3979 L1915-01 S1352 S3270 S3932
    Text: PSD Signal processing circuit for 1-D PSD C5923 Circuit board for easier 1-D PSD operation Features Applications l No complicated adjustments required Position can be measured just by installing a 1-D PSD on the board. l Accurate position sensing Use of pulse-driven LED allows accurate position sensing


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    PDF C5923 SE-171 KPSD1011E03 1BW TRANSISTOR transistor 1bw Keithley 195a S3931 C5923 S3979 L1915-01 S1352 S3270 S3932

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    Abstract: transistor 1BW C7563 C4674 S5991-01 AC Photonics S2044 S5990-01 L1915-01 S1880
    Text: PSD Signal processing circuit for 2-D PSD C4674, C7563 Signal processing circuit designed to facilitate operation of 2-D Position Sensitive Detector Features Applications l No complicated adjustment required Position measurement can be made simply by mounting


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    PDF C4674, C7563 SE-171 KPSD1005E07 1BW TRANSISTOR transistor 1BW C7563 C4674 S5991-01 AC Photonics S2044 S5990-01 L1915-01 S1880

    Untitled

    Abstract: No abstract text available
    Text: PHOTO IC Low-voltage operation photo IC S7610-10 High reliability photo IC operable at 2.2 V S7610-10 is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining


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    PDF S7610-10 S7610-10 L6895-10 SE-171 KPIC1027E03

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    Abstract: transistor 1BW Keithley 195a C5923 S3931 L1915-01 S1352 S3270 S3932 S3979
    Text: PSD Signal processing circuit for 1-D PSD C5923 Circuit board for easier 1-D PSD operation Features Applications l No complicated adjustments required Position can be measured just by installing a 1-D PSD on the board. l Accurate position sensing Use of pulse-driven LED allows accurate position sensing


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    PDF C5923 SE-171 KPSD1011E03 1BW TRANSISTOR transistor 1BW Keithley 195a C5923 S3931 L1915-01 S1352 S3270 S3932 S3979

    1BW TRANSISTOR

    Abstract: transistor 1BW 17 KPIC1027E03 L6895-10 S7610-10 SE-171
    Text: PHOTO IC Low-voltage operation photo IC S7610-10 High reliability photo IC operable at 2.2 V S7610-10 is a photo IC comprised of a photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated onto a single chip and molded with clear resin into a miniature package. An optical encoder resistant to tough environmental conditions can be configured by combining


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    PDF S7610-10 S7610-10 L6895-10 SE-171 KPIC1027E03 1BW TRANSISTOR transistor 1BW 17 KPIC1027E03 L6895-10

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    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E01

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    Abstract: No abstract text available
    Text: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape


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    PDF P6291 P6921 SE-171 KPC1007E03

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    Abstract: S4828 transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 S4827 SE-171 transistor uw
    Text: PHOTO IC Photo IC S4827, S4828 Subminiature package S4827 and S4828 are photo ICs comprised of a high-sensitivity photodiode, amplifier, schmitt trigger circuit and output transistor, all integrated into a single chip and molded with visible-cut resin into a subminiature package.


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    PDF S4827, S4828 S4827 S4828 S4827: S4828: SE-171 KPIC1035E01 1BW TRANSISTOR transistor 1BW transistor 1BW 57 KPCB0007EA KPIC1035E01 transistor uw

    1bw transistor

    Abstract: transistor 1BW uv ccd sensor S9840
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E07 1bw transistor transistor 1BW uv ccd sensor

    transistor 1BW

    Abstract: CCD image sensor uv ccd sensor S9840 1BW TRANSISTOR
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E10 transistor 1BW CCD image sensor uv ccd sensor 1BW TRANSISTOR

    1bw transistor

    Abstract: mpp a2 uv ccd sensor
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E08 1bw transistor mpp a2 uv ccd sensor

    transistor 1BW

    Abstract: No abstract text available
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E03 transistor 1BW

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    Abstract: KMPD1082E09 S9840 SE-171 ccd image sensor line follower sensor
    Text: IMAGE SENSOR CCD image sensor S9840 High UV sensitivity CCD image sensor S9840 is a back-thinned type CCD image sensor specifically designed for spectrometers. S9840 has low noise, low dark signal and wide dynamic range. These enable low-light-level detection by setting a long integration time.


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    PDF S9840 S9840 SE-171 KMPD1082E09 1BW TRANSISTOR KMPD1082E09 ccd image sensor line follower sensor

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    Abstract: P6291 KPCA0006EA KPCB0001EA KPCB0004EA KPCB0005EA KPCB0006EA KPCC0007EA
    Text: PHOTOINTERRUPTER Photointerrupter P6291 Photo IC output P6921 is a photointerrupter consisting of a high-power infrared LED and a photo IC. The photo IC incorporates a high-sensitivity photodiode, an amplifier, a Schmitt trigger circuit and an output transistor, all integrated in a single chip. These elements are enclosed in a miniature C-shape


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    PDF P6291 P6921 SE-171 KPC1007E01 1BW TRANSISTOR P6291 KPCA0006EA KPCB0001EA KPCB0004EA KPCB0005EA KPCB0006EA KPCC0007EA

    transistor 5bw

    Abstract: transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW
    Text: 2 S B 7 3 6 ,2 S B 7 3 6 R Audio Frequency Power Amplifier PNP Silicon Epitaxial Transistor Complimentary to 2SD780, 2SD780R P A C K A G E DIMENSIONS High DC current gain: h FE = 200 TYP. <VCE = -1 .0 V , l c = -5 0 m A in m illim eters {inches) 25T i 10 a


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    PDF 2SB736, 2SB736R 2SD780, 2SD780R 2SB736 transistor 5bw transistor 3bw 5bw transistor 2sb736r 3bw transistor 5BW 30 Bw5 transistor 1bw transistor transistor 1BW

    transistor 5bw

    Abstract: TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave
    Text: 9. Summarized Characteristics Table 4. Bipolar Transistor« Bipolar Transistors, Field Effect Transistors and Diodes Absolute M aximum Ratings Te*25uC Type No. Structure PNP Epitaxial Package N E C M INI M O L O Regular' Electrical Characteristics Ta«25°C>


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    PDF 2SK67 2SK160 transistor 5bw TRANSISTOR 5DW 5dw transistor 3bw transistor 2SC1009 transistor 3bw 1bw npn NPN2SC2351 nec m nec microwave