2SK67 Search Results

2SK67 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SK679A-T-AZ		Renesas Electronics Corporation	Switching N-Channel Power Mosfet

2SK67 Price and Stock

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Toshiba America Electronic Components 2SK672
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK672		1,050			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 2SK674
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	2SK674		265			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Renesas Electronics Corporation 2SK679A-AZ/JD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	2SK679A-AZ/JD		3,417			1 $0.96 10 $0.96 100 $0.96 1000 $0.384 10000 $0.336	Buy Now

2SK67 Datasheets (68)

Part	Manufacturer	Description	Datasheet Type	PDF
2SK67	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK67	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF
2SK67	Unknown	FET Data Book	Scan	PDF
2SK671	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK671	Unknown	FET Data Book	Scan	PDF
2SK672	Toshiba		Original	PDF
2SK672	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF
2SK672	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK672	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK67-2	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK672	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK672	Unknown	FET Data Book	Scan	PDF
2SK673	Toshiba		Original	PDF
2SK673	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF

2SK673	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK673	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK673	Unknown	Catalog Scans - Shortform Datasheet	Scan	PDF
2SK67-3	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
2SK673	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
2SK673	Unknown	FET Data Book	Scan	PDF

2SK67 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 2SK676H5-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V) I(D) Max. (A)70m P(D) Max. (W) Maximum Operating Temp (øC) I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m	Original	2SK676H5-2	PDF
Untitled Abstract: No abstract text available Text: 2SK677-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5 V(BR)GSS (V)-3.5 I(D) Max. (A)100m P(D) Max. (W)340m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)15m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.37m	Original	2SK677-2	PDF
2sj165 Abstract: X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159 Text: ロード・マップトランジスタ機能・用途別（シグナルMOS FET） VDSS - ID DC マップ (4 V 駆動タイプ) VDSS(V) 30 ID(DC)(A) 50 0.1 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 0.2 2SK1582 (5.0 Ω / SC-59) 0.5 2SK679A (1.0 Ω / TO-92)	Original	2SK1132 2SJ165 2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2sj165 X13769XJ2V0CD00 SC-84 2SK2541 SC-59 SC-62 2SK2070 2SK2858 2SK1591 2sk2159	PDF
SC-59 Abstract: 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84 Text: Road map Transistor Function/Application Signal MOS FET VDSS - ID(DC) MAP (4 V Gate-Driven Series) VDSS(V) 30 ID(DC)(A) 50 0.1 0.2 0.5 1.0 1.5 2.0 3.0 (RDS(on)MAX∗/Package) 2SK1132 (50 Ω / SST) 2SJ165 (50 Ω / SST) 2SK1582 (5.0 Ω / SC-59) 2SK679A	Original	2SK1133 SC-59) 2SJ166 2SK1590 2SK1592 SC-62) 2SJ212 SC-59 2SJ178 2SJ211 2SJ355 sp-8 package 2SK1657 SC-84	PDF
Untitled Abstract: No abstract text available Text: 2SK676-2 Transistors N-Channel UHF/Microwave HEMT V BR DSS (V)5.0 V(BR)GSS (V)-3.5 I(D) Max. (A)70m P(D) Max. (W)340m Maximum Operating Temp (øC)150’ I(DSS) Min. (A)10m I(DSS) Max. (A)70m @V(DS) (V) (Test Condition)2 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.25m	Original	2SK676-2	PDF
ic sony 0642 Abstract: sony 0642 2SK677 IC 0642 sony ke 931 0642 sony Text: _ 2SK677H5 SONY» AIGaAs/GaAs Low Noise Microwave H EM T C H IP Description The 2 S K 6 7 7 H 5 is an A IG aA s/G aA s HEM T c h ip fa b ric a te d by M O CVD M e ta l O rganic C hem ical V a p o r D e p o sitio n . T his 0 .5 m icro n gate FET fe a tu re s very lo w n o ise fig u re and h ig h	OCR Scan	2SK677H5 ic sony 0642 sony 0642 2SK677 IC 0642 sony ke 931 0642 sony	PDF
yc 545 Abstract: 2SK678 Text: 2SK678 FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS T Y P E ^-MOSii INDUSTRIAL APPLICATIONS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR Unit in n DRIVE APPLICATIONS. 20.5 MAX. • Low Drain-Source ON Resistance	OCR Scan	2SK678 100nA 300nA 20ki2) yc 545 2SK678	PDF
sony 0642 Abstract: No abstract text available Text: SONY CORP/COMPONENT PRODS 4TE D 0302303 0003150 3 2SK677H5 SONY, AIGaAs/GaAs Low Noise Microwave HEMT CHIP Unit: ju.m Chip outline Description The 2SK677H5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron	OCR Scan	2SK677H5 2SK677H5 D0G312b sony 0642	PDF
tc6105 Abstract: 2SK679 BH rn transistor 10285 TC-6105 Text: = t — 5> • 5/ - h M O S Field Effect P ow er Transistor 2SK679 2SK679Ü, 5 M W M m C co FE T T ", a i t s i z «t h x a v -f- > x T ~ t„ + T 9 & -3 -X -— 9 -t — %fcn> b ' ÿ A 7 ' i c * i l T " - f 0 # I t R d s o „ ^ 0 .5 £2 ( T Y P . ) @ V Gs = 8	OCR Scan	2SK679 2SK679Ã TC-6105 tc6105 2SK679 BH rn transistor 10285	PDF
2SK67 Abstract: 1500IU Text: 2SK67 Impedance Converter N-channel Silicon Junction FET PACKAGE DIMENSIONS in m illim eters inches 29±0 2 • Low zero gate voltage drain current: l DSS * 20tytA TYP. • High forward transfer admittance: I y « I - 1500/iU TYP. <VDS •= 5.0V, V GS » 0)	OCR Scan	2SK67 20tytA 1500/iU 2SK67 1500IU	PDF
2SK674 Abstract: Voltage regulator 0V to 48v 5A Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK674 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. . Low Drain-Source ON Resistance : Rd s (ON)=0 .040Sl(Typ.)	OCR Scan	2SK674 040Sl 20kii) 2SK674 Voltage regulator 0V to 48v 5A	PDF
Untitled Abstract: No abstract text available Text: SONY CORP/COMPONENT P RODS M^E D • 6362363 0003113 b «SONY 2SK676H51 SONY. AtGaAs/GaAs Low Noise Microwave HEM T GHIP Description Chip outline •Unit: jum The 2S K 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD M etal Organic Chemical Vapor Deposition . This 0.5 micron	OCR Scan	2SK676H51 2SK676H5	PDF
Untitled Abstract: No abstract text available Text: 6 4 275 25 N E C N E C ELE CT RO NI CS INC ELECTRONICS 2SK679 FEA TU RES • Suitable for switching power supplies, actuater controls, P A C K A G E D IM EN SIO N S in millimvteri inches 52 MAX and pulse circuits • Low RDStoni; R d s (od) “ 0-95 n TYP-	OCR Scan	2SK679	PDF
2SK67A Abstract: Zero-Gate Voltage Drain Current TC-1488 Text: NEC JUNCTION FIELD EFFECT TRANSISTOR ELECTRON DEVICE 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • in m illim eters inches L o w zero gate voltage dra in c u rre n t: I d s s = 2 0 0	OCR Scan	2SK67A 500/iS J22686 2SK67A Zero-Gate Voltage Drain Current TC-1488	PDF

2SK67A Abstract: 2SK67 Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w zero gate voltage drain c u rre n t: Idss“ 200 m A TVP. in millimeter* {inches} 1-1-8? 0.043	OCR Scan	2SK67A yfs21 2SK67A 2SK67	PDF
2SK679A Abstract: transistor d 1991 ar nec 2334 transistor M 7830 Text: MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm T h e 2 S K 6 7 9 A , N-channel vertical typ e M O S F E T , is a sw itching device w h ic h can be d ire c tly driven fro m an IC operating w ith a 5 V	OCR Scan	2SK679A 2SK679A transistor d 1991 ar nec 2334 transistor M 7830	PDF
mg15g1al3 Abstract: MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115 Text: • A L P H A N U M E R I C A L INDEX# Type No. 2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 2SK442 2SK447 2SK525 2SK526 2SK528 2SK529 2SK530 2SK531 2SK532 2SK537 2SK538 2SK539 2SK568 2SK572 2SK573 2SK578 2SK643 2SK644 2SK672 2SK673	OCR Scan	2SJ115 2SJ123 2SJ147 2SK357 2SK358 2SK385 2SK386 2SK387 2SK388 2SK405 mg15g1al3 MG400H1 2SK1124 2SK791 2sk525 MP6101 2SK531 2SK674 2SK673 2sk405 2sj115	PDF
28S DIODE Abstract: 2SK672 hc 175 Text: 2SK672 FIELD EFFECT TRANSISTO R SILICON N CHANNEL MOS T Y P E TT-MOSli INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. . 03.6 ±0.2 DRIVE APPLICATIONS. 13 2 . Low Drain-Source ON Resistance	OCR Scan	2SK672 0-15iXTyp. 300uA Te10mA, 28S DIODE 2SK672 hc 175	PDF
2SK676 Abstract: GaAs FET HEMT Chips Text: 2SK676H5 SONY AIGaAs/GaAs Low Noise Microwave HEMT CHIP Description Chip outline Unit: jum The 2SK 676H 5 is an AIGaAs/GaAs HEMT chip fabricated by MOCVD Metal Organic Chemical Vapor Deposition . This 0.5 micron gate FET features very low noise figure and high	OCR Scan	2SK676H5 2SK676H 2SK676 GaAs FET HEMT Chips	PDF
2SK679A Abstract: No abstract text available Text: Notice: You cannot copy or search for text in this PDF file, because this PDF _ file is converted from the scanned image of printed materials._ P1 98.2 MOS FIELD EFFECT TRANSISTOR 2SK679A IM-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm	OCR Scan	2SK679A 2SK679A, 2SK679A	PDF
TC-2334 Abstract: 2SK679A transistor 7830 A7830 Text: Notice: You cannot copy or search for text in this PDF file, because this PDF file is converted from the scanned image of printed materials. P1 98.2 FFECT TRANSISTOR 2SK679A N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING PACKAGE DIMENSIONS Unit : mm The 2SK679A, N-channel vertical type MOS FET, is a switching	OCR Scan	2SK679A 2SK679A, TC-2334 2SK679A transistor 7830 A7830	PDF
transistor 7830 Abstract: D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830 Text: z r — $ • y — h h 7 > v 7 i ! 2SK679A MOS Field Effect Transistor MOS FET 2SK679A !i, i N -;H fé M O S z u F E T T. 5 V j I 3 U C £O tf}* * 4 "si-> r r ' < ^ x t t 0 :* V iK ^ '- iS < , i- ? , T ? & 1 -^ -9 f?60 K 7 -f r i C ^ i i S T ' t o	OCR Scan	2SK679A 2SK679AÃ 105UCiOtfÃ transistor 7830 D1488 2sk679 2SK679A TRANSISTOR TT 2190 I-D05 TA-75 transistor M 7830	PDF
2SK673 Abstract: No abstract text available Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOSH 2SK673 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. 0 3 .6 ± 0 .2 10.3 MAX. Jf . L o w Drai n - S o u r c e ON Resistance	OCR Scan	2SK673 2SK673	PDF
2SK679 Abstract: PA33 Text: NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE FEATURES 2SK679 • Suitable fo r switching power supplies, actuater controls, PACKAGE DIMENSIONS and pulse circuits • Low RDS 0n ; RDS(on) = 0-95 in m illim eters (inches) TYP. 5.2 MAX. (V GS = 4 V, l D = 0 .5 A)	OCR Scan	2SK679 RS39726 1986M 2SK679 PA33	PDF

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2SK67 Search Results

2SK67 Result Highlights (1)

2SK67 Price and Stock

Toshiba America Electronic Components 2SK672

Toshiba America Electronic Components 2SK674

Renesas Electronics Corporation 2SK679A-AZ/JD

2SK67 Datasheets (68)

2SK67 Datasheets Context Search

Untitled

Untitled

2sj165

SC-59

Untitled

ic sony 0642

yc 545

sony 0642

tc6105

2SK67

2SK674

Untitled

Untitled

2SK67A

2SK67A

2SK679A

mg15g1al3

28S DIODE

2SK676

2SK679A

TC-2334

transistor 7830

2SK673

2SK679