MPT100
Abstract: No abstract text available
Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &
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2SK67A
Abstract: 2SK67
Text: JUNCTION FIELD EFFECT TRANSISTOR 2SK67A IMPEDANCE CONVERTOR N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR M IN I MOLD FEATURES PACKAGE DIMENSIONS • L o w zero gate voltage drain c u rre n t: Idss“ 200 m A TVP. in millimeter* {inches} 1-1-8? 0.043
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2SK67A
yfs21
2SK67A
2SK67
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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AN-134
transistor c2060
Transistor Shortform Datasheet & Cross References
1N4465
C1906 transistor
Germanium itt
3N58
IN939
MC1230F
2N3866 MOTOROLA
C943 transistor
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2SK163
Abstract: 2sk163 transistor Free 9014 transistor 2sk163 PA33 SS 9014 TC-5466
Text: NEC j m = t= r iv r x J u n c t io n Field E ffe c t T r a n s is to r A 2SJ44 V 3 h = 7 > i> * 9 P-Channel Silicon Jun ction Field Effect Transistor Audio Frequercy Low Noise Amplifier ^ • » 0 / P A C K A G E D IM EN SIO N S ^/FEATU RES Unit : mm O ¡15I f EE, H i g h
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02SK163
SC-43B
545tS4i8
2SK163
2sk163 transistor
Free 9014
transistor 2sk163
PA33
SS 9014
TC-5466
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