Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 1P Search Results

    TRANSISTOR 1P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3082 Rochester Electronics LLC CA3082 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    CA3081F Rochester Electronics LLC CA3081 - Small Signal Bipolar Transistor Visit Rochester Electronics LLC Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 1P Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SA2160

    Abstract: 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027
    Text: 2005 Transistor New Products Ver.1 MOS FET Series Low VCE sat Miniature Digital Transistor Series Low VCE(sat) Transistor Series Endured Discharge Voltage/ High Speed Switching/ Low Noise Transistor Series Muting Transistor Series MOS FET TUMT/TSMT Series


    Original     		O-220FM 47P4869E 2SA2160 2SA2149 2SC6005 RQW200 rdx100n45 RQA200N03 rqw200n03 RLA130N03 rdx*100n45 2sc6027 PDF

    MARKING 1PK

    Abstract: 1PK transistor MMBT2222AK fairchild sot-23 Device Marking pc
    Text: MMBT2222AK NPN Epitaxial Silicon Transistor MMBT2222AK NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1PK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Value Units VCBO Collector-Base Voltage


    Original     		MMBT2222AK MMBT2222AK OT-23 MARKING 1PK 1PK transistor fairchild sot-23 Device Marking pc PDF

    motorola transistor ignition

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU323AP NPN Silicon Darlington Power Transistor The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications. DARLINGTON NPN SILICON POWER TRANSISTOR


    OCR Scan     		BU323AP 340D-01 motorola transistor ignition PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    SE012

    Abstract: SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 SE012 SE090 SE140N SE115N diode 2SC5487 sta474a 8050e SE110N SLA-7611 PDF

    1N4001 transistor free

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


    Original     		BU323AP BU323AP r14525 BU323AP/D 1N4001 transistor free BC337 figure 1N4001 BC337 BU323P silicon diode 1N4001 specifications transistor BC337 transistor darlington npn PDF

    Varistor RU

    Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 Varistor RU SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586 PDF

    2SC5586

    Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
    Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)


    Original     		2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 2SA1386A 2SA1488 2SC5586 transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F PDF

    BC337 rbe

    Abstract: BC337 figure 1N4001 BC337 BU323AP BU323P diode 1N4001 voltage limitations
    Text: ON Semiconductort BU323AP NPN Silicon Darlington Power Transistor DARLINGTON NPN SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The BU323AP is a monolithic darlington transistor designed for automotive ignition, switching regulator and motor control applications.


    Original     		BU323AP BU323AP r14525 BU323AP/D BC337 rbe BC337 figure 1N4001 BC337 BU323P diode 1N4001 voltage limitations PDF

    RT3P66U

    Abstract: No abstract text available
    Text: PRELIMINARY RT3P66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3P66U is a composite transistor built with two 1.6 ±0.05 RT1P430 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ FEATURE


    Original     		RT3P66U RT3P66U RT1P430 PDF

    TRANSISTOR SMD MARKING CODE 1P

    Abstract: smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T
    Text: SMD General Purpose Transistor NPN MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original     		MMBT2222A OT-23 OT-23, MIL-STD-202G, TRANSISTOR SMD MARKING CODE 1P smd transistor marking 1p 1P smd transistor SMD TRANSISTOR MARKING 28 smd transistor 1p data smd TRANSISTOR code marking 1P TRANSISTOR SMD MARKING CODE 16 smd transistor code 1p transistor smd 06 smd transistor marking 1p T PDF

    RT3N66U

    Abstract: RT1N430
    Text: PRELIMINARY RT3N66U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm RT3N66U is a composite transistor built with two 1.6 ±0.05 RT1N430 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ FEATURE


    Original     		RT3N66U RT3N66U RT1N430 PDF

    1P marking

    Abstract: No abstract text available
    Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.


    Original     		MMBT2222A MPS2222A. OT-23 MMBT2222A MMBT2222A-GS18 MMBT2222A-GS08 D-74025 31-Aug-04 1P marking PDF

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.


    Original     		MMBT2222A MPS2222A. OT-23 MMBT2222A MMBT2222A-GS18 MMBT2222A-GS08 D-74025 12-Dec-03 PDF

    2SD2674

    Abstract: RB461F US5L10 TUMT5 marking code L10
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		US5L10 2SD2674 RB461F 85Max. 15Max. US5L10 TUMT5 marking code L10 PDF

    marking TR1

    Abstract: RT1P136 RT1N141
    Text: RT3T1CU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3T1CU is a composite transistor built Unit：mm 1.6 ±0.05 with RT1N141 chip and RT1P136 chip in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ


    Original     		RT1N141 RT1P136 marking TR1 PDF

    TUMT5

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		US5L10 2SD2674 RB461F 15Max. US5L10 85Max. TUMT5 PDF

    RT1P144

    Abstract: RT3T55U
    Text: RT3T55U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION RT3T55U is a RT1N144 chip composite and transistor RT1P144 built Unit：mm 1.6 ±0.05 with chip in USM6F 1.2 ±0.05 1pin ﾏｰｸ package.


    Original     		RT3T55U RT1N144 RT1P144 RT1P144 RT3T55U PDF

    fgt313

    Abstract: transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a
    Text: Part Number Index Part No. Category Description Page Part No. Category Description Page 2SA1186 Transistor Audio and General Purpose LAPT 156 2SC4024 Transistor DC-DC Converter and General Purpose 158 2SA1215 Transistor Audio and General Purpose (LAPT) 156


    Original     		2SA1186 2SC4024 2SA1215 2SC4131 2SA1216 2SC4138 100VAC 2SA1294 2SC4140 fgt313 transistor fgt313 SLA4052 RG-2A Diode SLA5222 fgt412 RBV-3006 FMN-1106S SLA5096 diode ry2a PDF

    RT1N241

    Abstract: RT3N22U
    Text: RT3N22U Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3N22U is a composite transistor built with two RT1N241 in USM6F package. 1.2 ±0.05 1pin ﾏｰｸ 6 0.5 FEATURE


    Original     		RT3N22U RT3N22U RT1N241 PDF

    Untitled

    Abstract: No abstract text available
    Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		US5L10 2SD2674 RB461F 15Max. US5L10 85Max. 1000m PDF

    MARKING L09

    Abstract: No abstract text available
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		2SB1709 RB461F 15Max. 85Max. 1000m MARKING L09 PDF

    2SB1709

    Abstract: RB461F
    Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor


    Original     		2SB1709 RB461F 85Max. 15Max. PDF

    K2226

    Abstract: SC-75A
    Text: RT3TDDU Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type OUTLINE DRAWING DESCRIPTION Unit：mm 1.6 ±0.05 RT3TDDU is a composite transistor built with two RT1N237 chip and RT1P237 chip in SC-75A package. 1.2 ±0.05 1pin ﾏｰｸ


    Original     		RT1N237 RT1P237 SC-75A K2226 PDF