US5U30
Abstract: No abstract text available
Text: US5U30 Transistor 2.5V Drive Pch+SBD MOS FET US5U30 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 0.15Max. 0.85Max. 1.3 0.65 0.65 1pin mark zFeatures 1) The US5U30 combines Pch MOS FET with a
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US5U30
15Max.
85Max.
US5U30
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TUMT5
Abstract: No abstract text available
Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor
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US5L10
2SD2674
RB461F
15Max.
US5L10
85Max.
TUMT5
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Untitled
Abstract: No abstract text available
Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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Untitled
Abstract: No abstract text available
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
US5L12
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Untitled
Abstract: No abstract text available
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm TUMT5 2.0 Features 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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Untitled
Abstract: No abstract text available
Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver 1.3 0.2Max. 2.0 Features 1) Tr : Low VCE(sat)
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US5L10
2SD2674
RB461F
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Untitled
Abstract: No abstract text available
Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.
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US5U35
US5U35
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US5U29
Abstract: No abstract text available
Text: US5U29 Transistor 2.5V Drive Pch+SBD MOS FET US5U29 zStructure Silicon P-channel MOS FET Schottky Barrier DIODE zExternal dimensions Unit : mm TUMT5 2.0 0.2 1.7 (2) (3) 0~0.1 0.2 (1) 0.77 (4) 2.1 (5) 1pin mark zFeatures 1) The US5U29 combines Pch MOS FET with a
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US5U29
US5U29
15Max.
85Max.
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Untitled
Abstract: No abstract text available
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 1.7 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 2.1 (5) 0.2 0.65 0.65 zFeatures 1) Nch MOSFET and schottky barrier diode
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15Max.
85Max.
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Untitled
Abstract: No abstract text available
Text: US5U2 Transistors 4V Drive Nch+SBD MOSFET US5U2 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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125 diode
Abstract: US5U30
Text: US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching.
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US5U30
US5U30
125 diode
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Untitled
Abstract: No abstract text available
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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2SB1710
Abstract: RB461F US5L11 TUMT5
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) zFeatures 1) Tr : Low VCE(sat) Di : Low VF 2) Small package 0.2
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US5L11
2SB1710
RB461F
85Max.
15Max.
US5L11
TUMT5
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mosfet with schottky body diode
Abstract: MOSFET dynamic parameters
Text: US5U1 Transistors 2.5V Drive Nch+SBD MOSFET US5U1 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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2SD2674
Abstract: RB461F US5L10 TUMT5 marking code L10
Text: US5L10 Transistors General purpose transistor isolated transistor and diode US5L10 A 2SD2674 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) 0.2 (1) 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor
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US5L10
2SD2674
RB461F
85Max.
15Max.
US5L10
TUMT5
marking code L10
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Untitled
Abstract: No abstract text available
Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. Dimensions (Unit : mm) Applications DC / DC converter Motor driver 1.3 Features 1) Tr : Low VCE(sat) Di : Low VF
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2SB1709
RB461F
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Untitled
Abstract: No abstract text available
Text: US5L11 Transistors General purpose transistor isolated transistor and diode US5L11 A 2SB1710 and a RB461F are housed independently in a TUMT5 package. zDimensions (Unit : mm) zApplications DC / DC converter Motor driver 1.3 zFeatures 1) Tr : Low VCE(sat)
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US5L11
2SB1710
RB461F
US5L11
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MARKING L09
Abstract: No abstract text available
Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor
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2SB1709
RB461F
15Max.
85Max.
1000m
MARKING L09
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2SB1709
Abstract: RB461F
Text: US5L9 Transistors General purpose transistor isolated transistor and diode US5L9 A 2SB1709 and a RB461F are housed independently in a TUMT5 package. zExternal dimensions (Unit : mm) (1) (5) 0.2 1.7 0~0.1 0.17 zStructure Silicon epitaxial planar transistor
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2SB1709
RB461F
85Max.
15Max.
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Untitled
Abstract: No abstract text available
Text: US5U35 Transistor 4V Drive Pch+SBD MOSFET US5U35 Structure Silicon P-channel MOSFET Schottky Barrier DIODE Dimensions Unit : mm TUMT5 2.0 Features 1) The US5U35 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) With fast switching.
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US5U35
US5U35
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Untitled
Abstract: No abstract text available
Text: US5L12 Transistors General purpose transistor isolated transistor and diode US5L12 A 2SD2675 and a RB461F are housed independently in a TUMT5 package. External dimensions (Unit : mm) (1) (5) 0.2 Features 1) Tr : Low VCE(sat) Di : Low VF 2) Small package
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US5L12
2SD2675
RB461F
85Max.
15Max.
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Untitled
Abstract: No abstract text available
Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 (2) (3) 0~0.1 1pin mark 0.2 (1) 0.77 (4) 1.7 (5) 2.1 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.
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15Max.
85Max.
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125 diode
Abstract: US5U29
Text: US5U29 Transistor 2.5V Drive Pch+SBD MOSFET US5U29 zStructure Silicon P-channel MOSFET Schottky Barrier DIODE zDimensions Unit : mm TUMT5 2.0 zFeatures 1) The US5U29 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching.
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US5U29
US5U29
125 diode
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Untitled
Abstract: No abstract text available
Text: US5U3 Transistors 2.5V Drive Nch+SBD MOSFET US5U3 zStructure Silicon N-channel MOSFET / Schottky barrier diode zDimensions Unit : mm TUMT5 2.0 zFeatures 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package. 2) High-speed switching, Low On-resistance.
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