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    TRANSISTOR 200 V Search Results

    TRANSISTOR 200 V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL73024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL70024SEHMX Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation
    ISL73024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors Visit Renesas Electronics Corporation
    ISL73024SEHX/SAMPLE Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistors, PFL, / Visit Renesas Electronics Corporation
    ISL70024SEHL/PROTO Renesas Electronics Corporation 200V, 7.5A Enhancement Mode GaN Power Transistor Visit Renesas Electronics Corporation

    TRANSISTOR 200 V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD 0508

    Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


    Original     		PDF BLA1011-200; BLA1011S-200 SMD 0508 BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		PDF BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 BLF7G20

    BLF7G22LS-200

    Abstract: BLF7G22L BLF7G
    Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance


    Original     		PDF BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L BLF7G

    BLC6G10-200

    Abstract: BLC6G10LS-200
    Text: BLC6G10-200; BLC6G10LS-200 UHF power LDMOS transistor Rev. 01 — 19 April 2006 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLC6G10-200; BLC6G10LS-200 BLC6G10-200 6G10LS-200 BLC6G10LS-200

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2000 Aug 02 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    BLA1011-200

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLA1011-200 Avionics LDMOS transistor Preliminary specification 2001 Feb 27 Philips Semiconductors Preliminary specification Avionics LDMOS transistor BLA1011-200 PINNING - SOT502A FEATURES • High power gain


    Original     		PDF M3D379 BLA1011-200 OT502A f4825 BLA1011-200 BP317

    MRF1001A

    Abstract: high frequency transistor
    Text: MRF1001A NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI MRF1001A is a High Frequency Transistor Designed for Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 200 mA VCE 20 V PDISS 1.0 W @ TC = 25 °C TJ -65 °C to +200 °C


    Original     		PDF MRF1001A MRF1001A high frequency transistor

    L-Band 1200-1400 MHz

    Abstract: diode gp 429 Radar x band radar HV400
    Text: DESCRIPTION DESCRIPTION HVV1214-075 HVV1214-075 L-Band Radar Pulsed Power Transistor L-Band Radar Pulsed Power Transistor HVV1214-075 1200-1400 MHz, 200µs Pulse, 10% DutyDuty 1200-1400 MHz, 200µs Pulse, 10% The innovative Semiconductor Company! L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-075 HVV1214-075MHz, HVV1214-075 429-HVVi EG-01-PO08X4 L-Band 1200-1400 MHz diode gp 429 Radar x band radar HV400

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT2227 Multi-Chip TRANSISTOR NPN/PNP FEATURES Power dissipation PCM: 200 mW (Tamb=25℃) Collector current 200/-200 mA ICM: Collector-base voltage 75/-60 V V(BR)CBO:


    Original     		PDF OT-363 MMDT2227 NPN2222A -10mA, -150mA -150mA, -15mA -500mA, -50mA

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847PN Muti-Chip General Purpose TRANSISTOR SOT-363 PNP and NPN FEATURES Power dissipation PCM : 200 mW (Tamb=25℃) Collector current ICM: 200/-200 mA Collector-base voltage


    Original     		PDF OT-363 BC847PN OT-363 -100mA -10mA -10mA 100MHz

    transistor marking DG

    Abstract: TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor
    Text: PUML1/DG 50 V, 200 mA NPN general-purpose transistor/ 100 mA NPN resistor-equipped transistor Rev. 01 — 14 July 2008 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistor and NPN Resistor-Equipped Transistor RET in one


    Original     		PDF OT363 SC-88) AEC-Q101 transistor marking DG TRANSISTOR SMD MARKING CODE pa marking code DG SMD Transistor dg transistor smd NXP SMD TRANSISTOR MARKING CODE SMD transistor code 132 transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD CODE PACKAGE SOT363 marking code BV SMD Transistor

    1416-200

    Abstract: No abstract text available
    Text: 1416 - 200 200 Watts - 50 Volts, Pulsed Radar 1400 - 1600 MHz GENERAL DESCRIPTION The 1416-200 is an internally matched, COMMON BASE transistor capable of providing 200 Watts of pulsed RF output power at one microsecond pulse width, ten percent duty factor across the band 1400-1600 MHz. This


    Original     		PDF 1600MHz, 1416-200

    RO4350 properties

    Abstract: RO4350 BLF7G15L-200 800B 15085
    Text: BLF7G15LS-200 Power LDMOS transistor Rev. 1 — 13 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1450 MHz to 1550 MHz. Table 1. Typical performance


    Original     		PDF BLF7G15LS-200 RO4350 properties RO4350 BLF7G15L-200 800B 15085

    transistor s 1014

    Abstract: L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200
    Text: HVV1214-025 HVV1214-025 L-BandRadar RadarPulsed PulsedPower PowerTransistor Transistor L-Band HVV1214-075 1200-1400 MHz,200!s 200!sPulse, Pulse,10% 10%Duty Duty HVV1214-025 The innovative Semiconductor Company! 1200-1400 MHz, L-Band Radar Pulsed Power Transistor


    Original     		PDF HVV1214-025 HVV1214-075 HVV1214-025 EG-01-PO05X5 429-HVVi EG-01-PO05X1 transistor s 1014 L-Band 1200-1400 MHz Radar radar circuit component x band radar HV400 SM200

    MJL3281A MJL1302A

    Abstract: mjl3281a MJL3281A-D MJL1302A complementary npn-pnp power transistors
    Text: ON Semiconductort NPN MJL3281A* PNP MJL1302A* Complementary NPN-PNP Silicon Power Bipolar Transistor *ON Semiconductor Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS The MJL3281A and MJL1302A are PowerBaset power transistors


    Original     		PDF MJL3281A* MJL1302A* MJL3281A MJL1302A r14525 MJL3281A/D MJL3281A MJL1302A MJL3281A-D complementary npn-pnp power transistors

    diode dual d92

    Abstract: KD621220
    Text: m /HBSX KD621220 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 DUdl DsrHnQtOn Transistor Module 200 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621220 Amperes/1200 diode dual d92 KD621220

    KD621K20

    Abstract: No abstract text available
    Text: m ß /B S K KD621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/1000 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD621K20 Amperes/1000 KD621K20

    Untitled

    Abstract: No abstract text available
    Text: FF 200 R 06 KL 2 Transistor Transistor Thermische Eigenschaften RfhJC Elektrische Eigenschaften Electrical properties Hochstzulässige W erte Maximum rated values RthCK V ces 600 V Ic 200 A Thermal properties DC, pro Baustein / per module DC, pro Baustein / per module


    OCR Scan     		PDF 2Q0R06KL2/2 34G32T7 D0G2047

    kd424520

    Abstract: d79 motor i3003 a 103 m Transistor
    Text: m /v a x x KD424520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Dual Darlington Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use


    OCR Scan     		PDF KD424520 Amperes/600 EIC20- kd424520 d79 motor i3003 a 103 m Transistor

    KS621K20

    Abstract: ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417
    Text: m w m oc KS621K20 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S M g lG D â tH n g tO fl Transistor Module 200 Amperes/1000 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621K20 Amperes/1000 KS621K20 ipm darlington transistor s43 DIODE S44 powerex ks62 transistor b 1417

    transistor s46

    Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
    Text: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power


    OCR Scan     		PDF KS621220A7 Amperes/1200 transistor s46 KS621220A7 s45 diode DIODE S45 powerex ks62

    DIODE s38

    Abstract: KS324520 powerex ks32 ks32 S-40
    Text: KS324520 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lr iQ lG D s r lln Q t O H Transistor Module 200 Amperes/600 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power devices designed for use in


    OCR Scan     		PDF KS324520 Amperes/600 DIODE s38 KS324520 powerex ks32 ks32 S-40

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10


    OCR Scan     		PDF 2N91B 2N2857 2N3600 2N3839 2N5031 2N5032 2N5179 2N5842 2N6304 2N6305

    diode D83

    Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
    Text: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are


    OCR Scan     		PDF KD424520HB Amperes/600 diode D83 50m01 U300 KD424520HB d82 diode darlington 40A