TRANSISTOR 2025 Search Results

TRANSISTOR 2025 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 2025 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: BLC8G21LS-160AV Power LDMOS transistor Rev. 1 — 12 August 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1805 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a Doherty demo board.	Original	BLC8G21LS-160AV	PDF
20258 Abstract: IEC-68-2-54 1301P Text: e PTB 20258 6 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20258 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts minimum output power, it may be used for both CW and PEP	Original	IEC-68-2-54 Std-002-A 1-877-GOLDMOS 1301-PTB 20258 IEC-68-2-54 1301P	PDF
Untitled Abstract: No abstract text available Text: BLP8G21S-160PV Power LDMOS transistor Rev. 1 — 8 August 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance of half device at Tcase = 25 C in a common source class-AB production test	Original	BLP8G21S-160PV	PDF
Untitled Abstract: No abstract text available Text: BLP8G21S-160PV Power LDMOS transistor Rev. 2 — 19 December 2013 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test	Original	BLP8G21S-160PV	PDF
Untitled Abstract: No abstract text available Text: BLP8G21S-160PV Power LDMOS transistor Rev. 3 — 1 July 2014 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz. Table 1. Typical performance Typical RF performance per section at Tcase = 25 C in a common source class-AB production test	Original	BLP8G21S-160PV	PDF
d1941 Abstract: NP161N04TUG MP-25ZT 161N04 Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP161N04TUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP161N04TUG-E1-AY Note	Original	NP161N04TUG NP161N04TUG NP161N04TUG-E1-AY NP161N04TUG-E2-AY O-263-7pin MP-25ZT) d1941 MP-25ZT 161N04	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001-PL-x-T92-B	Original	MJE13001-P MJE13001-PL-x-T92-B MJE13001-PG-x-T92-B MJE13001-PL-x-T92-K MJE13001-PG-x-T92-K MJE13001-PL-x-T92-A-B MJE13001-PG-x-T92-A-B MJE13001-PL-x-T92-A-K MJE13001-PG-x-T92-A-K QW-R201-088	PDF
MJE13001 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-x-AB3-A-R	Original	MJE13001 MJE13001G-x-AB3-A-R OT-89 MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B MJE13001	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-AB3-A -R	Original	MJE13001 MJE13001L-x-AB3-A MJE13001G-x-AB3-A-R MJE13001L-x-AB3-F MJE13001G-x-AB3-F-R MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-A-B	PDF
MJE13001 Abstract: MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G ORDERING INFORMATION Normal MJE13001-x-T92-B	Original	MJE13001 MJE13001L MJE13001G MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001 MJE-13001 MJe13001 TRANSISTOR transistor mje13001 NPN Transistor 600V npn 600v to92 2T92	PDF
MJE-13001 Abstract: MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A Lead-free: MJE13001L Halogen-free: MJE13001G ORDERING INFORMATION Normal MJE13001-x-T92-B	Original	MJE13001 MJE13001L MJE13001G MJE13001-x-T92-B MJE13001-x-T92-K MJE13001L-x-T92-B MJE13001G-x-T92-B MJE13001L-x-T92-K MJE13001G-x-T92-K MJE13001L-x-T92-B MJE-13001 MJE13001 MJE13001 equivalent transistor mje13001 MJe13001 TRANSISTOR NPN Transistor 600V mje13001 application all MJE13001 equivalent transistors equivalent mje13001 mje13001 D	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-A-B	Original	MJE13001-P MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K MJE13001L-P-x-T92-F-B MJE13001G-P-x-T92-F-B MJE13001L-P-x-T92-F-K MJE13001G-P-x-T92-F-K QW-R201-088	PDF
mje13001 Abstract: MJE-13001 TRANSISTOR 2025 MJe13001 TRANSISTOR npn 600v to92 transistor mje13001 npn transistor 400V Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR 1 FEATURES SOT-89 * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A 1 TO-92 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing	Original	MJE13001 OT-89 MJE13001-x-x-AB3-A MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R OT-89 MJE13001-x-x-AB3-F MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R mje13001 MJE-13001 TRANSISTOR 2025 MJe13001 TRANSISTOR npn 600v to92 transistor mje13001 npn transistor 400V	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-P-x-T92-B	Original	MJE13001-P MJE13001L-P-x-T92-B MJE13001G-P-x-T92-B MJE13001L-P-x-T92-K MJE13001G-P-x-T92-K MJE13001L-P-x-T92-A-B MJE13001G-P-x-T92-A-B MJE13001L-P-x-T92-A-K MJE13001G-P-x-T92-A-K QW-R201-088	PDF

C5750X7S2A106KT Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501 Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN AFT20P140-4WNR3 AFT20P140--4WN C5750X7S2A106KT AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501	PDF
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A  ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free MJE13001G-Q-x-AB3-A-R	Original	MJE13001-Q MJE13001G-Q-x-AB3-A-R OT-89 MJE13001G-Q-x-AB3-F-R MJE13001L-Q-x-T92-F-B MJE13001G-Q-x-T92-F-B MJE13001L-Q-x-T92-F-K MJE13001G-Q-x-T92-F-K	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth	Original	AFT20P140--4WN AFT20P140-4WNR3	PDF
13003 TRANSISTOR Abstract: E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte Text: 13003 Transistor NPN www.hsin.com.sg HSiN Semiconductor Pte Ltd 13003 TO—220 TRANSISTOR（ NPN ） FEATURES Power dissipation PCM : 1.5 W（Tamb=25℃） Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 700 V Operating and storage junction temperature range	Original	O--220 100TYP 540TYP 13003 TRANSISTOR E 13003 TRANSISTOR 13003 TRANSISTOR npn 13003 NPN Transistor features transistor 13003 13003 F 13003 T 13003 transistor transistor D 1710 HSiN Semiconductor Pte	PDF
MJE-13001 Abstract: MJE13001 C 2025 npn 600v to92 transistor mje13001 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R	Original	MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 MJE13001 C 2025 npn 600v to92 transistor mje13001	PDF
MJE-13001 Abstract: transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92 Text: UNISONIC TECHNOLOGIES CO., LTD MJE13001 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR FEATURES * Collector-base voltage: V BR CBO=600V * Collector current: IC=0.2A ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13001L-x-x-AB3-A -R MJE13001G-x-x-AB3-A-R	Original	MJE13001 OT-89 MJE13001L-x-x-AB3-A MJE13001G-x-x-AB3-A-R MJE13001L-x-x-AB3-F MJE13001G-x-x-AB3-F-R MJE13001L-x-x-T92-B MJE13001G-x-x-T92-B MJE13001L-x-x-T92-K MJE-13001 transistor mje13001 TO-92 mje13001 MJE13001 MJE13001 TO92 npn 600v to92 NPN Transistor 600V 1015 to-92	PDF
2sb504 Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52 Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle	OCR Scan		PDF
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007	PDF
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF
1N6227 Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan		PDF

Privacy Settings

TRANSISTOR 2025 Search Results

TRANSISTOR 2025 Result Highlights (5)

TRANSISTOR 2025 Datasheets Context Search

Untitled

20258

Untitled

Untitled

Untitled

d1941

Untitled

MJE13001

Untitled

MJE13001

MJE-13001

Untitled

mje13001

Untitled

C5750X7S2A106KT

Untitled

Untitled

13003 TRANSISTOR

MJE-13001

MJE-13001

2sb504

LG color tv Circuit Diagram schematics

IC HXJ 2038

1N6227