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    TRANSISTOR 27S Search Results

    TRANSISTOR 27S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 27S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AOTF27S60L

    Abstract: AOT27S60L
    Text: AOT27S60/AOB27S60/AOTF27S60 600V 27A MOS Power Transistor General Description Product Summary The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


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    PDF AOT27S60/AOB27S60/AOTF27S60 AOT27S60& AOB27S60 AOTF27S60 AOT27S60L AOB27S60L AOTF27S60L O-220 O-220F O-263 AOTF27S60L AOT27S60L

    2STF2220

    Abstract: JESD97 P025H STMicroelectronics marking code date sot-89
    Text: 2STF2220 High Gain Low Voltage PNP Power Transistor General features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current ■ In compliance with the 2002/93/EC European Directive Description


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    PDF 2STF2220 2002/93/EC OT-89 2STF2220 JESD97 P025H STMicroelectronics marking code date sot-89

    Untitled

    Abstract: No abstract text available
    Text: zSzmL-donductoi ZPioaucti, Line. TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX; (973) 376-8960 MTP2N80 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS M*MN'. -I*-! •H B h- 1 ±


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    PDF MTP2N80 O-220)

    2STF2220

    Abstract: JESD97 P025H 173C1 STMicroelectronics marking code date sot-89
    Text: 2STF2220 High gain Low Voltage PNP power transistor Features • Very low Collector to Emitter saturation voltage ■ D.C. Current gain, hFE >100 ■ 1.5 A continuous collector current Applications ■ Power management in portable equipment ■ Switching regulator in battery charger


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    PDF 2STF2220 OT-89 2STF2220 JESD97 P025H 173C1 STMicroelectronics marking code date sot-89

    AOB27S60

    Abstract: No abstract text available
    Text: AOT27S60/AOB27S60/AOTF27S60 600V 27A α MOS TM Power Transistor General Description Product Summary The AOT27S60& AOB27S60 & AOTF27S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications.


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    PDF AOT27S60/AOB27S60/AOTF27S60 AOT27S60& AOB27S60 AOTF27S60 AOT27S60L AOB27S60L AOTF27S60L O-220 O-263 O-220F0 AOB27S60

    d2625

    Abstract: TRANSISTOR D2625 SLRS023A-D2625 SN75466 darlington pair transistor SN75467 diagram DARLINGTON kd 617 SN75466 APPLICATION SN75469
    Text: SN75466 THRU SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023A- D2625, DECEMBER 1976 - REVISED APRIL 1993 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS • 500-mA Rated Collector Current Single Output • High-Voltage Outputs. . . 100 V • Output Clamp Diodes


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    PDF SN75466 SN75469 SLRS023A D2625, 500-mA ULN2001A, ULN2002A, ULN2003A, ULN2004A, SN75466, d2625 TRANSISTOR D2625 SLRS023A-D2625 darlington pair transistor SN75467 diagram DARLINGTON kd 617 SN75466 APPLICATION SN75469

    transistor fn 155

    Abstract: lr transistor t7 BU2525A BY228
    Text: Philips Semiconductors Product specification Silicon diffused power transistor BU2525A GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.


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    PDF BU2525A 0077fcj44 711Gfl2b 0077bi45 transistor fn 155 lr transistor t7 BY228

    max10169

    Abstract: 2SK702D
    Text: 6427525 N E C ELECTRONICS N E C 98 D INC E LECTRONICS INC 15 18881 D T - OOlflflfl], 3 PE 1 ^ 5 7 5 5 5 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 D E SC R IPTIO N The 2SK702 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM E N S IO N S


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    PDF 2SK702 2SK702 T-39-11 max10169 2SK702D

    Untitled

    Abstract: No abstract text available
    Text: N EC ELECTRONICS INC 30E D L^27S55 0 02T77b b • T " .4 |-7 5 PHOTO INTERRUPTER PS4008 PHOTO INTERRUPTER DESCRIPTION PACKAGE DIMENSIONS The PS4008 photo coupled interrupter module containing a GaAs in millimeters inches light em itting diode and an NPN silicon photo-transistor,


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    PDF 27S55 02T77b PS4008 PS4008 T-41-73

    ic T M 2313

    Abstract: No abstract text available
    Text: BUX21 File Number Silicon N-P-N Switching Transistor 1172 TERMINAL DESIGNATIONS For Switching Applications in Industrial and Commercial Equipment Features: Vcco — 2 00 V I c — 40 A P T— 250 W • ■ m 92CS-27S16 JEDEC TÛ-204AA POWER TRANSISTORS CM


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    PDF BUX21 92CS-27S16 -204AA RCA-BUX21 O-204AA ic T M 2313

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2550 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2550 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Souree ON Resistance


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    PDF 2SK2550 24mf2 20kfl)

    2SK2550

    Abstract: SC-65
    Text: TOSHIBA 2SK2550 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M O SV 2SK2550 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS • • •


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    PDF 2SK2550 10jus VDD-40V, SC-65

    2SK2266

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2266 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2266 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL APPLICATIONS 10.3MAX.


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    PDF 2SK2266 165/aH, \10ms

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2744 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV 2SK2744 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive


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    PDF 2SK2744 24mil 20kfl) 10/iS VDD-40V,

    2SK2385

    Abstract: S2510
    Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10 ±0.3 r 4V Gate Drive


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    PDF 2SK2385 S2510

    DIODE S4 45a

    Abstract: 2SK2266
    Text: TOSHIBA 2SK2266 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2266 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm TO-220FL APPLICATIONS 4V Gate Drive


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    PDF 2SK2266 22mil \10ms DIODE S4 45a 2SK2266

    HF 331 transistor

    Abstract: BLF221
    Text: bbsaiai Philips Semiconductors doerbib 3 7 ^ apx Product specification HF/VHF power MOS transistor BLF221 b^E T> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability


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    PDF BLF221 O-39/3) MBA379 HF 331 transistor BLF221

    2sk2385

    Abstract: PH 36A 2SK238
    Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2


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    PDF 2SK2385 22mil P10ms* 2sk2385 PH 36A 2SK238

    2sk2385

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-MOSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 10 ±0.3 4V Gate Drive


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    PDF 2SK2385 100//A 20kil) 383//H 2sk2385

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2233 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2233 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 1 5.9 M AX.


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    PDF 2SK2233 20kfl)

    k2233

    Abstract: 2SK2233 SC-65 CON63
    Text: TOSHIBA 2SK2233 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-?r-MOSV 2SK2233 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 5.9 M A X.


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    PDF 2SK2233 20kil) 165yt/h k2233 2SK2233 SC-65 CON63

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2 S K2 38 5 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 10 ±0.3


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    PDF 2SK2385 22mf2 20kf2)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2266 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-tt-M O SV 2S K2266 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U n it in m m CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE TO-220FL APPLICATIONS


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    PDF 2SK2266 K2266 O-220FL

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159