2SC 8550
Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Text: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4
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3SK309
3SK317
3SK318
BB101C
BB102C
BB301C
BB302C
BB304C
BB305C
BB501C
2SC 8550
6020v4
6030v4
HITACHI 08122B
2SC 8050
HITACHI 08123B
transistor h945
H945
TRANSISTOR c 6030v4
2sk3545
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E2955T
Abstract: 2955T IC 4047 datasheet HMJE2955T PT 10000
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6736 Issued Date : 1992.12.15 Revised Date : 2002.04.03 Page No. : 1/4 HMJE2955T PNP EPITAXIAL PLANAR TRANSISTOR Description The HMJE2955T is designed for general purpose of amplifier and switching applications.
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HE6736
HMJE2955T
HMJE2955T
O-220
E2955T
2955T
IC 4047 datasheet
PT 10000
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NT 2955 ON transistor
Abstract: Marking 2955 MMFT2955ET1 fr 2955 2N3904 AN569 MMFT2955E MMFT2955ET3 SMD310 2955 DPAK
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
NT 2955 ON transistor
Marking 2955
MMFT2955ET1
fr 2955
2N3904
AN569
MMFT2955E
MMFT2955ET3
SMD310
2955 DPAK
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMFT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2955E Motorola Preferred Device SOT–223 for Surface Mount TMOS MEDIUM POWER FET 1.2 AMP
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MMFT2955E/D
MMFT2955E
MMFT2955E/D*
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853IMPATT
c5088 transistor
transistor C3207
TLO84CN
sec c5088
IN5355B
D2817A
C3207 transistor
toshiba f630
TLO81CP
MC74HC533N
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1002ds
Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2
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2SC5998"
C5139
2SC5247
2SC5907
2SD1504
2SJ361
2SK439
2SK494
2SK3349
BCR5KM-12L
1002ds
6020v4
TRANSISTOR BJ 131-6
2SC 8550
transistor 2sc1417
HITACHI 08122B
transistor h945
6030v4
2SC 8050
25aaj
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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P2955E
Abstract: 2955E TP2955E TP2955 sped sipa
Text: MOTOROLA Orctor Ms document SEMICONDUCTOR TECHNICAL DATA by MTP2955E/D Designer's Data Sheet M T P 2955E TM O S E-FET™ P o w er Field E ffe c t Transistor M otorola P rila rrtd Daylca P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES
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MTP2955E/D
8S036.
MTP2955BD
P2955E
2955E
TP2955E
TP2955
sped
sipa
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MTD2955V
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TD 2955V TM O S V™ Pow er Field E ffe c t Transistor DPAK for S u rfa ce M ount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.230 OHM P-Channel Enhancement-Mode Silicon Gate
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MTD2955V/D
MTD2955V
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MTP2955
Abstract: TMOS Power FET diode h5e 221A-06 AN569 MTP3055E Motorola TMOS Power FET P-Channel
Text: b 3 b ? 2 S 4 DO'iflfllb 121 • MOTb M O T O R O L A SC C X S T R S / R F MOTOROLA H SEM ICONDUCTO R TECHNICAL DATA M T P 2955 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES RDS on) = 0.3 OHM
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MTP3055E
MTP2955
b3b7254
MTP2955
TMOS Power FET
diode h5e
221A-06
AN569
MTP3055E
Motorola TMOS Power FET P-Channel
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Untitled
Abstract: No abstract text available
Text: TIP2955 TIP3055 COMPLEMENTARY SILICON POWER TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The TIP3055 is a silicon Epitaxial-Base Planar NPN transistor mountend in TO-218 plastic package. It is intented for power switching
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TIP2955
TIP3055
TIP3055
O-218
TIP2955.
P2955/TIP3055
O-218
OT-93)
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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2955E
Abstract: MTA2955E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA2955E Fully Isolated TMOS E-FET 1TM Pow er Field E ffect Transistor Motorola Preferred Device P-Channel Enhancement-Mode Isolated T0-220 TMOS POWER FET 7.0 AMPERES 60 VOLTS RDS on = 0.30 OHM
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T0-220
O-220
b3b7254
2955E
b3b7554
MTA2955E
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2955V
Abstract: TD2955V
Text: MOTOROLA Order this document by MTD2955V/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTD2955V TMOS V™ Power Field Effect Transistor DPAK for Surface Mount TMOS POWER FET 12 AMPERES 60 VOLTS RDS on = 0.200 OHM P-Channel Enhancement-Mode Silicon vaaie
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MTD2955V/D
2955V
TD2955V
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NJ01
Abstract: No abstract text available
Text: I . . , A L L E GR O M I C R O S Y S T E M S INC T3 D QS0433Ô 0003751 2 • T-9 1-0 1 PROCESS NJ01 Process NJ01 N-Channel Junction Field-Effect Transistor Process NJ01 is an N-channel junction field-effect
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00D37S1
T-91-01
NJ01
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount Motorola Preferred Device TMOS MEDIUM POWER FET 1.2 AMP 60 VOLTS RDS on = 0.3 OHM This advanced E -F E T is a TMOS medium power MOSFET
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OT-223
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C2688
Abstract: c2688 transistor 5257 transistor equivalent transistor TIP2955 br c2688 C-2688 c2688 L L72B tRANSISTOR c2688 TIP2955
Text: TEXAS INSTR {OPTO} 8961726 b5 TEXAS INSTR » F lfiT b lT S b D D 3b 3 62 C 3 6 9 9 8 OPTO TIP2955 P-N-P SILICON POWER TRANSISTOR JAN U ARY 1972 - REVISED OCTOBER 1984 • Designed for Complementary Use with TIP 3055 • 9 0 W at 2 5 ° C C a se Temperature
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TIP2955
TIP3055
t0-218aa
22eoi2
D0370D3
TIP2955
C2688
c2688 transistor
5257 transistor
equivalent transistor TIP2955
br c2688
C-2688
c2688 L
L72B
tRANSISTOR c2688
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Marking 2955
Abstract: MMFT2955ET1 MMFT2955E 2955 mosfet
Text: MOTOROLA O rder this docum ent by M M FT2955E/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor P-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount This advanced E -F E T is a TM O S medium pow er M O SFET designed to withstand high energy in the avalanche and com m uta
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FT2955E/D
OT-223
318E-04
O-261AA
Marking 2955
MMFT2955ET1
MMFT2955E
2955 mosfet
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TFK S 186 P
Abstract: K 2961 tv 2971 2SC2952 New Transistor Manual
Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English
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470MHz,
TFK S 186 P
K 2961
tv 2971
2SC2952
New Transistor Manual
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MRF966
Abstract: MRF96 re30d
Text: MRF961 MRF962 MRF965 See BFR96 MOTOROLA • SEMICONDUCTOR TECHNICAL DATA The RF Line MRF966 MRFC966 N-Channel Dual-Gate G aA s Field-Effect Transistor . . . d e p le t i o n m o d e d u a l- g a t e M E S F E T d e s ig n e d f o r h ig h f r e q u e n c y a m p lif ie r
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MRF961
MRF962
MRF965
BFR96)
MRF966
MRFC966
MRF966,
MRFC966
MRF96
re30d
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2955v
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MTP2955V TMOS V Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 12 AMPERES 60 VOLTS R DS on = 0.200 OHM T M O S V is a n ew te c h n o lo g y d e sig n e d to a chie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lt th a t of sta n d a rd M O S FE Ts. This
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