Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2N3054 Search Results

    TRANSISTOR 2N3054 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2N3054 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492 PDF

    2N3054A

    Abstract: No abstract text available
    Text: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s


    OCR Scan     		2N3054A RAD8-89 PDF

    2n3054a

    Abstract: No abstract text available
    Text: m 2N3054A \ \ SILICON NPN POWER TRANSISTOR D E SC R IP T IO N : The 2N3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications M A XIM U M R A T IN G S 4.0 A 10 A PEAK lc V INCHES 55 V ce 75 W @ Tc = 25 °C P diss -65 °C to +200 °C


    OCR Scan     		2N3054A 2N3054A PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF

    RCA H 541

    Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
    Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK


    OCR Scan     		PDF

    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    TIP41C EQUIVALENT

    Abstract: CP211 TRANSISTOR tip41c TIP41C transistor CR NPN Transistor switch 2N3054A CJD41C
    Text: Central TM Semiconductor Corp. PROCESS CP211 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 99 MILS Die Thickness 12.5 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 48 MILS Top Side Metalization


    Original     		CP211 2N3054A CJD41C TIP41C 17-August TIP41C EQUIVALENT CP211 TRANSISTOR tip41c TIP41C transistor CR NPN Transistor switch 2N3054A CJD41C PDF

    2N3054A

    Abstract: TIP41C TIP41C EQUIVALENT CJD41C CP211 transistor CR NPN chip die npn transistor
    Text: PROCESS CP211 Power Transistor NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 80 x 99 MILS Die Thickness 12.5 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 48 MILS Top Side Metalization Al - 30,000Å


    Original     		CP211 2N3054A CJD41C TIP41C 22-March 2N3054A TIP41C TIP41C EQUIVALENT CJD41C CP211 transistor CR NPN chip die npn transistor PDF

    TIP41C

    Abstract: 2N3054A CJD41C CP211 chip die npn transistor chip die transistor
    Text: PROCESS CP211 Central Power Transistor TM Semiconductor Corp. NPN - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 x 99 MILS Die Thickness 12.5 MILS Base Bonding Pad Area 12 x 32 MILS Emitter Bonding Pad Area 13 x 48 MILS Top Side Metalization


    Original     		CP211 2N3054A CJD41C TIP41C 21-September TIP41C 2N3054A CJD41C CP211 chip die npn transistor chip die transistor PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    2N4839

    Abstract: TO114 package 2N5860 2N1724A 2N3714 2N3715 2N3716 2N3789 2N3790 2N3792
    Text: GENERAL TRANSISTOR CORP 24E D • 3^SaD01 DODOD^ fi ■ General Transistor Corporation CASE TO-3, TO-39 lc MAX =3-50A Vceo(sus) s40-100V 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 (213) 673-8422 • Telex 65-3474 * FAX (213) 672-2905 T - 3 3 - o i


    OCR Scan     		2N3789 2N3713 2N3790 2N3714 2N3791 2N3715 2N3792 050-H O-107 O-126 2N4839 TO114 package 2N5860 2N1724A 2N3716 PDF

    5N520

    Abstract: 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278
    Text: GENERAL TRANSISTOR CORP EME D • 3120001 000Q070 3 ■ 1^3 3 ^ 0 / General Transistor Corporation CASE 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 lc<MAX) = 2 0 to 6 0 A VcEO(SUS) a 4 Û-3 0 0 V


    OCR Scan     		0-300V 2N1938 2N1937 2N3265 2N6260 2N6261 2N6315 2N6317 2N6316 2N6318 5N520 5n52 2N3268 2N1938 2n60n 2N3265 5n5202 606J 2N4866 2N6278 PDF

    transistor 2n3054

    Abstract: 2N3054
    Text: GAE GREAT AMERICAN ELECTROINCS 2N3054 Silicon NPN medium power transistor 2N3054 is intended for general switching and amplifier applications. Package Type: TO-66 ABSOLUTE IVAXIMUM RATINGS TCASE = 25°C SYMBOL PARAMETERS Collector-Emitter Voltage REB=100n


    OCR Scan     		2N3054 2N3054 100mAdc, 30Vdc, 90Vdc, 500mAdc, 50mAdc 200mAdc, transistor 2n3054 PDF

    2N3054

    Abstract: 100w npn 2N3054A C233C
    Text: 2N3054A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) NPN POWER TRANSISTOR


    Original     		2N3054A 300ms 2N3054" 2N3054 2N3054A 2N3054-JQR-B 100w npn C233C PDF

    2N3054A

    Abstract: No abstract text available
    Text: 2N3054A MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 3.86 (0.145) rad. FEATURES 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 14.48 (0.570) 14.99 (0.590) 24.33 (0.958) 24.43 (0.962) NPN POWER TRANSISTOR


    Original     		2N3054A E00mA 500mA 200mA 300ms 100mA 2N3054A PDF

    2N3054

    Abstract: J 2N3054 npn transistor to-66
    Text: 2N3054 MEDIUM POWER NPN SILICON TRANSISTOR 4 AMPERE PO W ER TRANSISTOR NPN SILICON 55 VOLTS 25 WATTS T O -6 6 P a c k a g e f o r B e t t e r P o w e r H a n d lin g C a p a b ilit y DC C u r r e n t G a i n S p e c i f i e d t o 3 .0 A m p e r e s E x c e lle n t S a fe O p e ra tin g A re a


    OCR Scan     		2N3054 2N3054 J 2N3054 npn transistor to-66 PDF

    SAP 17 TRANSISTOR VOLTAGE AND AMP

    Abstract: 2N3054 pirgo 2N3054 SAP 17 TRANSISTOR Pirgo Electronics 104351-5
    Text: A P I ELE CTR ON IC S INC 07 » F 1 00435=12 000G055 POWER TRANSISTOR ENGINEERING BULLETIN TYPE 2N 3054, 4 AMP NPN SILICON SINGLE-DIFFUSED POWER TRANSISTOR . High D issipation, P d = 29W 075 050 - 3 6 0 MIN High V oltage, BVCex = 9 0 V a l l d im e n s i o n s in i n c h e s


    OCR Scan     		2N3054 2N3054, SAP 17 TRANSISTOR VOLTAGE AND AMP 2N3054 pirgo 2N3054 SAP 17 TRANSISTOR Pirgo Electronics 104351-5 PDF

    J 2N3054

    Abstract: transistor 101 UP2-TO66-B to-66 transistor
    Text: UP2 Series for 1O-66 Outline UP2-TO66-CB w /2N3054 cr., '"'1 U 101 ~1 1Z w 00 ~ < w > ID < W / ~ n: ~ W 1W (/) < U 00 (TO-66) TRANSISTOR DESCRIPTION OF CURVES N.C. Horiz.Device Only Mounted to G.10. 90 .N.C. Horiz. & Vert. With Dissipator. .200 FPM w/Diss.


    Original     		1O-66 UP2-TO66-CB /2N3054 UP2-TO66-52CB UP2-TO66 UP2-TO66-47B UP2-TO66 UP2-TO66-47 UP2-TO66-52B UP2-TO66-52 J 2N3054 transistor 101 UP2-TO66-B to-66 transistor PDF

    2N3054

    Abstract: 2N3054A
    Text: Datasheet Central 2N3054 2N3054A Semiconductor Corp. NPN SILICON POWER TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC TO-66 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A types are NPN Silicon Power Transistors manufactured by


    OCR Scan     		2N3054 2N3054A 2N3054, 2N3054A 100mA 10OmA, PDF

    2N3054

    Abstract: Amplifier Transistor NPN 40V 100mA TO-66 CASE 2N3054A
    Text: 2N3054 2N3054A NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A types are NPN silicon power transistors manufactured by the epitaxial base process, mounted in a hermetically sealed metal case, designed for general purpose


    Original     		2N3054 2N3054A 2N3054, 2N3054) 2N3054A) 100mA 100mA, Amplifier Transistor NPN 40V 100mA TO-66 CASE PDF

    npn transistor to-66

    Abstract: 2N3584A TRANSISTOR 751 2N3054A 2N3879A 2N3584 2n3767 2N3583 2N3738 2N3878
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-66 V ceo Ic DEVICE TYPE sus VOLTS (max) AMPS NPN TO-66 2N3054A 55 4 25-100@.5/4 2N3583 250h 2N3584A T ir ^ * Tc = 25UC h V»CER VcE(j»t) @ I c^Ib (V@ A/A) l*FE@ V V ce PACKAGE (min/max @ A/V) p • D*


    OCR Scan     		2N3054A 2N3583 2N3584A 2N3585A 2N3738 2N3739A 2N3766A 2N3767A 2N3878 2N3879A npn transistor to-66 TRANSISTOR 751 2N3584 2n3767 PDF