2n3823
Abstract: No abstract text available
Text: 2N3823 N-Channel Silicon Junction Field-effect Transistor 17.89 Transis. 1 of 1 Home Part Number: 2N3823 Online Store 2N3823 Diodes N- C hannel Silic o n J unc tio n Field-effect Trans is to r Transistors
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2N3823
com/2n3823
2N3823
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2N3823
Abstract: No abstract text available
Text: <Jnc. ^£.1±E.ij 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELtPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3823 SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Strii t PIN I 7 I OI/U o>ib SQUHCC QHAIN MAXIMUM RATINGS Syntlml v.c,.
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2N3823
2N3823
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2N3824
Abstract: 2N3823 transistor 2N3824 2N3823 equivalent 2N3824 equivalent NJ32 4B401
Text: Databook.fxp 1/13/99 2:09 PM Page B-4 B-4 01/99 2N3823, 2N3824 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3823,
2N3824
2N3823
2N3824
2N3823
transistor 2N3824
2N3823 equivalent
2N3824 equivalent
NJ32
4B401
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AN478A
Abstract: AN478A MOTOROLA 2N3823 fet motorola an-215 WESCON-1967 2N3823 equivalent Y212 Theory of Modern Electronic Semiconductor Device BIPOLAR Transistor high frequency 2N3823
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN423/D SEMICONDUCTOR APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory utilizing the two port network
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AN423/D
AN423
AN478A
AN478A MOTOROLA
2N3823 fet
motorola an-215
WESCON-1967
2N3823 equivalent
Y212
Theory of Modern Electronic Semiconductor Device
BIPOLAR Transistor high frequency
2N3823
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2N3823 equivalent
Abstract: transistor 2N3824 2N3821 2N3822 equivalent 2N5021 maximum idss transistor 2N5460 transistor 2N5461 2N3822 2N3823
Text: Databook.fxp 1/13/99 2:09 PM Page F-18 F-18 01/99 NJ32 Process Silicon Junction Field-Effect Transistor ¥ General Purpose Amplifier G Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA
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2N3821,
2N3822
2N3823,
2N3824
2N4222,
2N4222A
2N3823 equivalent
transistor 2N3824
2N3821
2N3822 equivalent
2N5021
maximum idss transistor
2N5460
transistor 2N5461
2N3822
2N3823
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2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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2N3823 equivalent
Abstract: 2N3822 equivalent 2n3821 2N3823 Model 2N3822UB 2N3822 2N3823
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 2004. INCH-POUND MIL-PRF-19500/375G 21 June 2004 SUPERSEDING MIL-PRF-19500/375F 19 March 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, FIELD-EFFECT, N-CHANNEL, DEPLETION MODE,
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MIL-PRF-19500/375G
MIL-PRF-19500/375F
2N3821,
2N3821UB,
2N3822,
2N3822UB,
2N3823,
2N3823UB,
MIL-PRF-19500.
2N3823 equivalent
2N3822 equivalent
2n3821
2N3823 Model
2N3822UB
2N3822
2N3823
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2N3823
Abstract: IEC134 transistor 2N3823
Text: JV 2N3823 _ N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction f ield-effect transistor in a T O -72 metal envelope, intended fo r v.h.f. am plifier and mixer applications in industrial service.
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2N3823
Pin15
2N3823
IEC134
transistor 2N3823
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2N3823 philips
Abstract: 2N3823 3R2S X451
Text: PHI LIP S MIE D INTERNATIONAL m 711005b 002b343 3 OIPHIN '' 2N3823 L T-3/-2& N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR Symmetrical n-channel, depletion type, silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope, intended fo r v.h.f. am plifier and m ixer applications in industrial service.
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002b343
2N3823
2N3823 philips
2N3823
3R2S
X451
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500MA
500MA
240MWF
240MWF
y51 h 120c
bd124
KT368
BFQ59
Silec Semiconductors
BD214
al103
AFY18
bd192
MM1711
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186J
LG color tv Circuit Diagram schematics
free transistor equivalent book 2sc
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
RCA SK CROSS-REFERENCE
KIA 4318
transistor cs 9012
Til 322A
sx3704
diode d.a.t.a. book
1N1007
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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1N6227
Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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Untitled
Abstract: No abstract text available
Text: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CASE T O-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT F R E QUENCY UP TO 450MHz. • THE DEVICE IS ALSO
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2N3823
450MHz.
100mV
es15V
f-100Hz
-25oC
S320/2\
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2N3823 equivalent
Abstract: 2N3823
Text: 2 N 3823 N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR , ï 1 e I nwfi t f CASE TO-72 THE 2N3823 IS AN N-CHANNEL JFET DESIGNED FOR RF AMPLIFIER AND MIXER APPLICATIONS. IT FEATURES LOW CROSS-MODULATION, LOW NOISE FIGURE AND GOOD POWER GAIN AT FRE QUENCY UP TO 450MHz. •THE DEVICE IS ALSO
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2N3823
2N3823
450MHz.
to-72
500mW
S320/2\5
2N3823 equivalent
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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FJJ141/A
2305D
FJJ181/A
2305E/848
FJJ191/A
FJL101/A
CD2306D
FJY101/A
2306E/832
CD2307/944
3TE445
2N3303
ECC88
TAA*310
B9D TRANSISTOR
BYY32
GEX36/7
Ferranti zs70
6ej7
3n159
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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TIS43
Abstract: equivalent of transistor bc214 BF257 Texas equivalent of transistor bc212 bc 214 2N696 TEXAS INSTRUMENTS Q2T2222 TIS70 BFR40 kd 2060 transistor BF195 equivalent
Text: The Transistor and Diode Data Book for Design Engineers Volume II Northern European Edition IMPORTANT NOTICES Texas Instrum ents Ltd ., reserves the rig h t to make changes at any tim e in order to improve design and to supply the best p ro d u c t possible.
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2S301
BS9300-C-598
2S305
BS9300-C-366
2S307
2S322
CV7396
BS9300-C-396
CV7647
BS9300-C-647
TIS43
equivalent of transistor bc214
BF257 Texas
equivalent of transistor bc212 bc 214
2N696 TEXAS INSTRUMENTS
Q2T2222
TIS70
BFR40
kd 2060 transistor
BF195 equivalent
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P-Channel Depletion Mode FET
Abstract: P-Channel Depletion-Mode FET E202 2N3631 2N3823 Junction FETs JFETs 2N2606 2N3329 E202 P-Channel Depletion Mosfets
Text: AN73-7 s S ilic o n ix APPLICATION NOTE An Introduction to FETs INTRODUCTION In fact, FET technology today allows a greater packaging density in large-scale integrated circuits LSI than would ever be possible w ith bipolar devices. The basic principle o f the field-effect transistor (F E T ) has
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2N4303
Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2n3866 noise
2N5566
2N4304
2N4393
uhf vhf amplifier
UHF UHF Transistors
BF161
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2N4039
Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2N4304
t018 transistor
T018
2N4417
t071
uhf vhf amplifier
2N4221
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