D1485
Abstract: 2SA1720
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1720 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SA1720 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM
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2SA1720
2SA1720
O-220
D1485
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2SA1743
Abstract: C11531E
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1743 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1743 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1743
2SA1743
C11531E
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2SA1742
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1742 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1742 is a power transistor developed for high-speed ORDERING INFORMATION switching and features a high hFE at low VCE sat . This transistor is ideal
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2SA1742
2SA1742
O-220
O-220)
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2SA1741
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1741 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1741 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at low VCE(sat). This transistor is
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2SA1741
2SA1741
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D1316
Abstract: 2SA1744
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1744 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1744 is a power transistor developed for high-speed PACKAGE DRAWING UNIT: mm switching and features a high hFE at Low VCE(sat). This transistor is
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2SA1744
2SA1744
D1316
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darlington transistor for audio power application
Abstract: 2SA1714 2SC4342 C11531E
Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for
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2SA1714
2SA1714
O-126
2SC4342
C11531E)
darlington transistor for audio power application
2SC4342
C11531E
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MN1280
Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor
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transistor 1647
Abstract: 2SA1647
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647,1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWINGS Unit: mm 6.5 ±0.2 This transistor is ideal for use in switching regulators, DC/DC
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2SA1647
1647-Z
transistor 1647
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2SA1647
Abstract: 2SA1647-Z d1483
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1647, 2SA1647-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1647 is a mold power transistor developed for high- PACKAGE DRAWING Unit: mm 6.5 ±0.2 5.0 ±0.2 This transistor is ideal for use in switching regulators, DC/DC
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2SA1647,
2SA1647-Z
2SA1647
2SA1647-Z
d1483
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2SA1845
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1845 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1845 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1845
2SA1845
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Untitled
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1648, 2SA1648-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1648 is a mold power transistor developed for highspeed switching and features a very low collector-to-emitter saturation voltage. This transistor is ideal for use in switching regulators, DC/DC
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2SA1648,
2SA1648-Z
2SA1648
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2SA1847
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1847 PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1847 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1847
2SA1847
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2SA1841
Abstract: darlington transistor for audio power application
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1841 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SA1841
2SA1841
darlington transistor for audio power application
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D1558
Abstract: 2SA1840
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1840 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1840 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment.
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2SA1840
2SA1840
D1558
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Varistor RU
Abstract: SE110N transistor 2SC5487 2SA2003 SE090N high voltage transistor SE090 RBV-406 2SC5586
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
Varistor RU
SE110N
transistor
2SC5487
2SA2003
SE090N
high voltage transistor
SE090
RBV-406
2SC5586
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2SC5586
Abstract: transistor 2SC5586 diode RU 3AM 2SA2003 microwave oven diode single phase bridge rectifier IC with output 1A 2SC5487 RG-2A Diode Dual MOSFET 606 TFD312S-F
Text: Index by Part Number Part No. Type 2SA1186 Transistor Complementary (LAPT for Audio Output/General Purpose) 2SA1215 Transistor (Complementary (LAPT) for Audio Output/General Purpose) 2SA1216 Transistor (Complementary (LAPT) for Audio Output/General Purpose)
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2SA1186
2SA1215
2SA1216
2SA1262
2SA1294
2SA1295
2SA1303
2SA1386
2SA1386A
2SA1488
2SC5586
transistor 2SC5586
diode RU 3AM
2SA2003
microwave oven diode
single phase bridge rectifier IC with output 1A
2SC5487
RG-2A Diode
Dual MOSFET 606
TFD312S-F
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2SA1843
Abstract: No abstract text available
Text: DATA SHEET SILICON POWER TRANSISTOR 2SA1843 PNP SILICON EPITAXIAL POWER TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1843 is a power transistor developed for high-speed switching and features a high hFE at low VCE sat . This transistor is ideal for use as a driver in DC/DC converters and actuators.
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2SA1843
2SA1843
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JAPAN transistor
Abstract: 96-529-BD11
Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.
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2SA1036K
2SC411K
500mA
96-529-BD11)
JAPAN transistor
96-529-BD11
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2SA1841
Abstract: No abstract text available
Text: DATA SHEET DARLINGTON POWER TRANSISTOR 2SA1841 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ★ DESCRIPTION ORDERING INFORMATION The 2SA1841 is a high-speed Darlington power transistor. PART NUMBER PACKAGE 2SA1841 MP-10
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2SA1841
2SA1841
MP-10
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transistor
Abstract: 2SC411K transistor 495 "General Purpose Transistor" TRANSISTOR 493 dual npn 500ma smt machines 500ma pnp NPN/PNP transistor pnp 500ma 40v
Text: Transistors General purpose transistor dual transistors IMZ4 FFeatures 1) Includes a 2SA1036K and a 2SC411K transistor in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference.
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2SA1036K
2SC411K
500mA
96-529-BD11)
curvesC411K
transistor
transistor 495
"General Purpose Transistor"
TRANSISTOR 493
dual npn 500ma
smt machines
500ma pnp
NPN/PNP transistor
pnp 500ma 40v
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Power management Dual-transistors UMZ1N TRANSISTOR SOT-363 DESCRIPTION Silicon epitaxial planar transistor FEATURES 2SA1037AK and 2SC2412K are housed independently in a package. z Transistor elements independent, eliminating interference.
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OT-363
OT-363
2SA1037AK
2SC2412K
Temperature25â
-50mA
100MHz
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2sa1694
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SA1694 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC 2SA1694 is a silicon PNP epitaxial planar transistor, it uses UTC’s advanced technology to provide the customers with
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2SA1694
2SA1694
2SA1694L-x-T3P-T
2SA1694G-x-T3P-T
2SA1694L-x-T3N-T
2SA1694G-x-T3N-T
QW-R214-016
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2SA1928
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1928 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION _ SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1928 is a silicon PNP epitaxial type transistor. It is designed for low noise differential amplify application.
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2SA1928
2SA1928
-100V
270Hz
270Hz
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2sa1929
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SA1929 DUAL TRANSISTOR (BASE COMMON) FOR CONSTANT-CURRENT CIRCUIT, ACTIVE LOAD APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING DESCRIPTION Mitsubishi 2SA1929 is a silicon PNP epitaxial type transistor. It is designed for
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2SA1929
2SA1929
-100V
300mA,
100Hz)
110mV
270Hz
X10-3
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