Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TRANSISTOR 2SA1315 Search Results

    TRANSISTOR 2SA1315 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SA1213 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SA1315 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Transistor A1315

    Abstract: A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 A1315 transistor 2Sa1315 TRANSISTOR MARKING 06 2SC3328 PDF

    Transistor A1315

    Abstract: 2sa1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching: tstg = 1.0 µs (typ.)


    Original     		2SA1315 2SC3328 O-92MOD Transistor A1315 2sa1315 PDF

    Transistor A1315

    Abstract: A1315 transistor 2Sa1315 A1315 2SC3328
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 A1315 transistor 2Sa1315 A1315 2SC3328 PDF

    Transistor A1315

    Abstract: 2SA1315 A1315 transistor 2SC3328 A1315
    Text: 2SA1315 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1315 Power Amplifier Applications Power Switching Applications Unit: mm • Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) • High-speed switching time: tstg = 1.0 s (typ.)


    Original     		2SA1315 2SC3328 Transistor A1315 2SA1315 A1315 transistor 2SC3328 A1315 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 O-92MOD C3328 NPN Transistor c3328 2SC3328 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 2SA1315 PDF

    c3328

    Abstract: C3328 NPN Transistor 2SC3328 2SA1315
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 s (typ.) •


    Original     		2SC3328 2SA1315 c3328 C3328 NPN Transistor 2SC3328 2SA1315 PDF

    C3328 NPN Transistor

    Abstract: c3328 2SC3328 transistor 2Sa1315 2sc3328
    Text: 2SC3328 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process 2SC3328 Power Amplifier Applications Power Switching Applications • Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) • High-speed switching: tstg = 1.0 µs (typ.) •


    Original     		2SC3328 2SA1315 C3328 NPN Transistor c3328 2SC3328 transistor 2Sa1315 2sc3328 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


    Original     		SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 PDF

    2SC4793 2sa1837

    Abstract: 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor
    Text: Part Number 2SA2058 Y 2SA1160 N 2SC2500 N 2SA1430 N 2SC3670 N 2SA1314 Y 2SC2982 Y 2SC5755 Y 2SA2066 Y 2SC5785 Y TPC6602 Y TPC6501 Y 2SA1802 Y 2SC4681 Y 2SC4682 N 2SC4683 N 2SC4781 N 2SC5713 Y TPC6D03 Y 2SA2065 Y 2SC5784 Y 2SA2069 Y 2SC5819 Y 2SA2061 Y 2SA2059 Y


    Original     		2SA2058 2SA1160 2SC2500 2SA1430 2SC3670 2SA1314 2SC2982 2SC5755 2SA2066 2SC5785 2SC4793 2sa1837 2sC5200, 2SA1943, 2sc5198 2sC5200, 2SA1943 transistor 2SA2060 power transistor npn to-220 2sc5198 equivalent transistor 2SC5359 2SC5171 transistor equivalent NPN Transistor PDF

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan     		O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346 PDF

    2SA1315

    Abstract: 2SC3328 A131 C2804 TRANSISTOR 2sa1315
    Text: 2SA1315 TO SH IBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS INDUSTRIAL APPLICATIONS Unit in mm • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A)


    OCR Scan     		2SA1315 2SC3328 2SA1315 2SC3328 A131 C2804 TRANSISTOR 2sa1315 PDF

    2SA1315

    Abstract: 2SC3328 A131 TT31
    Text: 2SA1315 TOSHIBA 2 S A 1 315 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS POWER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat)= -0 .5 V (Max.) (1^= -1A )


    OCR Scan     		2SA1315 2SC3328 961001EAA2 2SA1315 A131 TT31 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SA1315 2 S A 1 315 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS. SILICON PNP EPITAXIAL TYPE PCT PROCESS PO W ER SWITCHING APPLICATIONS. • INDUSTRIAL APPLICATIONS Unit in mm Low Collector Saturation Voltage : v CE(sat) = -0 .5 V (Max.) (Ic = -1 A )


    OCR Scan     		2SA1315 2SC3328 PDF

    C2804

    Abstract: Transistor A131 2SA1315 2SC3328 A131 TT31
    Text: 2SA1315 TO SH IBA TOSHIBA TRANSISTOR 2 SILICON PNP EPITAXIAL TYPE PCT PROCESS S A 1 3 1 5 Unit in mm POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. 5.1 MAX. • Low Collector Saturation Voltage : v CE(sat)= -0.5 V (Max.) (1^= -1A) • High Speed Switching Time : tgtg^l.O/^siTyp.)


    OCR Scan     		2SA1315 2SC3328 O-92MOD C2804 Transistor A131 2SA1315 2SC3328 A131 TT31 PDF

    SA1315

    Abstract: 2SA1315 2SC3328 A131
    Text: TOSHIBA 2SA1315 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 315 IN D USTRIA L APPLICATIONS U nit in mm PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Collector Saturation Voltage : v C E (sa t)= - 0 .5 V (Max.) ( I c = - 1 A )


    OCR Scan     		2SA1315 2SC3328 SA1315 SA1315 2SA1315 2SC3328 A131 PDF

    2SC3328

    Abstract: 3AAG 2SC332 2SA1315 2SC3328 transistor
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage • VCE ( s a t ) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC3328 2SA1315 75MAX O-92MOD Junc-01 2SC3328 3AAG 2SC332 2SA1315 2SC3328 transistor PDF

    2SC3328

    Abstract: 2SA1315
    Text: TO SH IBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • • • Low Saturation Voltage • VCE (sat) “ 0.5V (Max.) (Ie = lA) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC3328 2SA1315 75MAX O-92MOD 2SC3328 2SA1315 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 PO W ER AM PLIFIER APPLICATIONS. INDUSTRIAL APPLICATIONS PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage VCE = 0.5V (Max.) (IC = 1A) • High Speed Switching Time : tstg= 1.0/iS (Typ.)


    OCR Scan     		2SC3328 2SA1315 PDF

    2SC3328

    Abstract: 2SA1315 2SC3328 transistor
    Text: TOSHIBA 2SC3328 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 IN D USTRIA L APPLICATIONS PO W ER AM PLIFIER APPLICATIONS. PO W ER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 -5 V (M a x .) (IC = 1 A ) •


    OCR Scan     		2SC3328 2SA1315 O-92MOD 2SC3328 2SA1315 2SC3328 transistor PDF

    2SA1315

    Abstract: 2SC3328
    Text: TO SH IBA 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 POWER SWITCHING APPLICATIONS • • • Unit in mm 5.1 M A X. Low Saturation Voltage : V(TR (sat) —0-5V (Max.) (I£ = 1A) High Speed Switching Time : tgtg^l.O/^s (Typ.)


    OCR Scan     		2SC3328 2SA1315 75MAX. O-92MOD PDF

    15J102

    Abstract: Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346
    Text: L -S T M T 0 -9 2 M 0 D T Y P E POWER TRANSISTOR V ’CEO \(V> 10 30 40 50 60 80 100 120 180 2SA949U50VI 2AC2229(150V) 0.05 200 250 2SA1321 2SC3334 300 2SC5122I400V) 2SA1145U50V) 2SC2705(!50V) 2SC2230(160V) 0.1 2SC2482 2SC2230A 2SA817A 0.4 2SC1627A 2SA1811


    OCR Scan     		2SA949U50VI 2AC2229 2SA1145U50V) 2SC2705( 2SC2230 2SA817A 2SC1627A 2SA1811 2SC4707 2SA965 15J102 Transistor 2SC4288A Transistor 2SA 2SB 2SC 2SD Drive IC 2SC3346 2sa 102 transistor transistor 2SA 101 50J301 02SC5030 T15J103 Driver IC 2SC3346 PDF

    2SC3328 transistor

    Abstract: No abstract text available
    Text: T O SH IB A 2SC3328 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3328 INDUSTRIAL APPLICATIONS POWER SWITCHING APPLICATIONS. • Low Saturation Voltage : V C E ( s a t ) = 0 , 5 V (Max,) (IC = 1 A ) • High Speed Switching Time : t^tg —1.0/*s (Typ.)


    OCR Scan     		2SC3328 2SA1315 2SC3328 transistor PDF

    2Sj72

    Abstract: transistor 2SC2655 2SK147 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225
    Text: L-SSTM 9. TO-92 MOD PACKAGE SERIES co o CD N ro Ul o >TRANSISTOR ^ Application Type No. & SW V (pF) (pF) (V) 1 4 0 -6 0 0 * 1 5Ò0 0.5 2000 50 150 1 500 (27)/(50 10 0.9 1 0 0 -3 2 0 * * 2 100 0.5 800 80 150 2 100 (13) 10 1 Ü i—i 1.5 0.9 1 0 0 -3 2 0 * *


    OCR Scan     		2SA1160 2SC2500 2SA1160 2SC1627A 2SC2235 2SA817A 2SA965 2SK147 2SJ72 2Sj72 transistor 2SC2655 2sc2705 transistor 2sc2500 high voltage driver transistor 2sc2482 2SC238 2sc2383 2SC3225 PDF