TRANSISTOR 2SC 18 Search Results

TRANSISTOR 2SC 18 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

TRANSISTOR 2SC 18 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
A933A Abstract: No abstract text available Text: Transistors General Purpose Transistor -50V, 0.15A 2SA1037AK / 2SA1576A / 2SA1774 / 2SA933AS •F e a tu re s 1 ) Excellent •E x te rn a l dim ensions (Units: mm) ïife linearity. 2) Com plem ents the 2SC2412K/ 2SA1576A 2SA1037AK 2SC40S1 /2SC 4617/2SC 1740S.	OCR Scan	2SA1037AK 2SA1576A 2SA1774 2SA933AS 2SA1576A 2SC2412K/ 2SC40S1 4617/2SC 1740S. A933A	PDF
TRANSISTOR 2SC Abstract: transistor 2sc 18 2SC2522 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc Text: SILICON HIGH SPEED POWER TRANSISTOR 2SC 2522 2SC 2523 S e p te m b e r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET T he 2 S C 2 5 2 2 /2 S C 2 5 2 3 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h	OCR Scan	2SC2522 2SC2523 50jU-A, 300jus TRANSISTOR 2SC transistor 2sc 18 transistor 2sc pnp fujitsu ring emitter 2sc2523 high power switching transistor 2sc	PDF
2SC2526 Abstract: 2SC2525 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25 Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2525 2SC 2526 S epte m be r 19 79 SILICON NPN RING EMITTER TRANSISTOR RET The 2 S C 2 5 2 5 /2 S C 2 5 2 6 are silicon NPN general purpose, high pow er switching transistors fabricated w ith Fujitsu's unique Ring E m itter Transistor (R E T ) tec h	OCR Scan	2SC2525 2SC2526 50juA 300jus 2SC2526 TRANSISTOR 2Sc 2525 TRANSISTOR 2SC TRANSISTOR 2SC2525 2SA1076 LC 311 TRANSISTOR 2sc2526 "ring emitter" 2SC25	PDF
2SC4699K Abstract: 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246 Text: b ' 7 > i s Z £ /Transistors 2SC4699K/2SC4700 2SC 4699K 2SC 4700 Epitaxial Planer NPN Silicon Transistor M M Z 'f For High-Speed Switching • ÿH férl'ii 0/D im ensions Unit : mm 2SC4689K to ff= 2SC4700 2 .0 ± 0 ,Z 2 .9 ± 0 .2 22ns (Typ.) • I —0.1	OCR Scan	2SC4699K/2SC4700 2SC4699K 2SC4700 10mA/1mA) 2SC4699K SC-59 2SC4700 T247 2SC4699 T106 T107 T146 T147 T246	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC 2586 is an NPN silicon epitaxial transistor designed for UHF-band medium pow er amplifiers.	OCR Scan	2SC2586 11693EJ1V0D	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1926 is an NPN silicon epitaxial dual transistor that	OCR Scan	2SC1926 2SC1275, P11670EJ1V0DS00	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1946A is a silicon NPN epitaxial planar type transistor de Dim ensions in m m signed for RF power amplifiers on V H F band mobile radio applications. FEATURES	OCR Scan	2SC1946A	PDF
2SC2609 Abstract: 2Sc260 transistor z ss Text: MITSUBISHI RF POWER TRANSISTOR 2SC2609 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING M itsubishi 2SC 2609 is a silicon N PN epitaxial planar type transistor specifically deisgned for V H F power am plifier applications. Dim ensions in mm R1 FEATURES	OCR Scan	2SC2609 2SC2609 G01fc 2Sc260 transistor z ss	PDF
Z60N Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm	OCR Scan	2SC4240 peg13dB. 220pF, 1000pF, 4700p Z60N	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that	OCR Scan	2SC1927 2SC1275,	PDF
AF 239 S Abstract: AF 239 af239 Germanium power S 239 L siemens Text: 2SC D • û23SbQS DOOMQTS 4 [SIE G AF 239 S PNP Germanium RF Transistor SIEMENS AKTIEN6ESELLSCHAF for output, mixer, and oscillator stages up to 90 0 M H z T - 3 / - 0 7 AF 239 S is a germanium PNP mesa transistor in TO 72 case 18 A 4 DIN 41876 . The leads	OCR Scan	23SbQS Q62701-F51 oro-20 F--05 AF239S AF 239 S AF 239 af239 Germanium power S 239 L siemens	PDF
2sc1965 Abstract: 2SC1965A transistor 6w Text: 1=24^02=] 0017537 MITSUBISHI RF POWER TRANSISTOR 30T 2SC1965A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1 96 5A is a silicon NPN epitaxial planar type transistor Dimension in mm designed for industrial use RF power amplifiers on VHF band 0 8 .5 O M A X	OCR Scan	2SC1965A 2SC1965A 175MHz, Tc-17metal 2sc1965 transistor 6w	PDF
TRANSISTOR SE 135 Abstract: 2SC2055 transistor BA RW Text: MITSUBISHI RF POWER TRANSISTOR 2SC2055 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC 2055 is a silicon NPN epitaxial planar type transistor designed for RF amplifiers on V H F band portable or hand-held radio applications. Dimensions in mm 0 5 .1 M A X	OCR Scan	2SC2055 2SC2055 O-92L TRANSISTOR SE 135 transistor BA RW	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC1729 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 1729 is a silicon NPN epitaxial planar type transistor designed for R F power amplifiers on V H F band mobile radio amplications. Dimensions in mm FEATURES • High power gain: Gpe > 10dB	OCR Scan	2SC1729 175MHz.	PDF

3055 transistor Abstract: 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055 Text: 2SC T> m flS3SbOS D004T11 * mZIZG . T ~ 2 3 -/ 3 NPN Transistor for Powerful A F Output Stages 2 N 3055 - SIEMENS AKTIENGESELLSCHAF-2 N 3055 is a single diffused NPN silicon transistor in TO 3 case 3 A 2 DIN 41872). The collector is electrically connected to the case. The transistor is particularly suitable for	OCR Scan	D004T11 Q62702-U58 B--01 fl23Sb05 A23SbDS B--03 3055 transistor 2N3055 M 3055 power transistor transistor 3055 e 3055 t 3055 npn power transistor 3055 on 3055 j 3055 power transistor IN 3055	PDF
2SC3133 Abstract: 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3133 NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3133 is a silicon NPN ep itaxia l planar type transistor Dimensions i designed fo r RF pow er am plifiers in HF band m obile radio applications. 9.1 ± 0 . 7	OCR Scan	2SC3133 2SC3133 27mhz rf ic TRANSISTOR 1P 1P H transistor 27mhz transistor RF POWER TRANSISTOR NPN	PDF
Untitled Abstract: No abstract text available Text: MITSUBISHI RF POWER TRANSISTOR 2SC3101 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 3101 is a silicon N PN epitaxial planar typ e transistor specifi OUTLINE DRAWING Dimensions in mm cally designed fo r U H F power amplifiers applications. FEATURES • High pow er gain:	OCR Scan	2SC3101	PDF
Transistor BFX 90 Abstract: transistor bfx 73 BFX 514 BFX89 b 514 transistor Text: 2SC D • û23ShQS 000474^ 4 W S I E ù NPN Silicon Transistor for RF Broadband Amplifier T ~ Z 'tï BFX 89 -SIEMENS AKTIEN GE SE LL SC HA F BFX 89 is an epitaxial NPN silicon RF transistor in TO 72 case (18 A 4 DIN 41876 . The leads are electrically insulated from the case. This transistor is suitable for general	OCR Scan	23ShQS Q62702-F296 Transistor BFX 90 transistor bfx 73 BFX 514 BFX89 b 514 transistor	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA 2SC2240 TOSHIBA TRANSISTOR SILOCON NPN EPITAXIAL TYPE PCT PROCESS 2SC 2240 LOW NOISE AUDIO AMPLIFIER APPLICATIONS The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse	OCR Scan	2SC2240 2SC2240	PDF
2SC3908 Abstract: op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN Text: MITSUBISHI RF POWER TRANSISTOR 2SC3908 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC 3908 is a silicon NPN epitaxial planar typ e transistor Dim ensions in m m designed fo r H F pow er am p lifie rs applications. R1 FEATURES • High pow er gain: G pe ^ 1 1 .5dB	OCR Scan	2SC3908 2SC3908 T-40E op 30MHZ PORCELAIN dust cap LC 7w RF POWER TRANSISTOR NPN 3 w RF POWER TRANSISTOR NPN	PDF
Transistor BFr 99 Abstract: Transistor BFR 96 transistor 2sc 548 Text: 2SC D .- . • . - , -„-,r— - . .» - - 1— — -. -■ ~. fl235bOS QQQMbbS 3 M S I E G T-V-fcJ NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIEN6ESELLSCHAF T -j-— BFR 14 C D ! BFR 14 C is an epitaxial NPN silicon planar microwave transistor in hermetically sealed	OCR Scan	fl235bOS Transistor BFr 99 Transistor BFR 96 transistor 2sc 548	PDF
2SC2540 Abstract: 75MHZ Text: MITSUBISHI RF POWER TRANSISTOR 2SC2540 N PN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC 2540 is a silicon NPN ep itaxial planar typ e transistor designed fo r RF power am p lifie rs in V H F band m obile radio applications. D im e n sio n s in m m	OCR Scan	2SC2540 2SC2540 75MHZ	PDF
TRANSISTOR 2SC Abstract: 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc Text: F U J IT S U SILICON HIGH SPEED POWER TRANSISTOR 2SC 2527 Septem ber 1979 SILICON NPN RING EMITTER TRANSISTOR RET T h e 2 S C 2 5 2 7 is silicon N PN general purpose, high pow er sw itching transistors fabricated w ith Fujitsu's unique Ring E m itte r Transistor (R E T ) techn o lo g y. R E T	OCR Scan	2SC2527 50juA, 300jus TRANSISTOR 2SC 2SA1077 2SC2527 NPN transistor 2527 high power switching transistor 2sc	PDF
TRANSISTOR J 5804 Abstract: TRANSISTOR J 5804 EQUIVALENT TRANSISTOR J 5804 NPN j 5804 transistor 2SC2628 2sc262 8-32UNC-3A RF POWER TRANSISTOR NPN vhf Text: MITSUBISHI RF POWER TRANSISTOR 2SC2628 NPN EPITAXIAL PLANAR T Y P E DESCRIPTIO N OUTLINE DRAW ING 2SC 2628 is a silicon NPIM epitaxial planar typ e transistor designed fo r RF power am plifiers in V H F band m ob ile radio applications. Dimensions in mm C 1 .5 M A X	OCR Scan	2SC2628 2SC2628 TRANSISTOR J 5804 TRANSISTOR J 5804 EQUIVALENT TRANSISTOR J 5804 NPN j 5804 transistor 2sc262 8-32UNC-3A RF POWER TRANSISTOR NPN vhf	PDF

TRANSISTOR 2SC 18 Search Results

TRANSISTOR 2SC 18 Result Highlights (5)

TRANSISTOR 2SC 18 Datasheets Context Search

A933A

TRANSISTOR 2SC

2SC2526

2SC4699K

Untitled

Untitled

Untitled

2SC2609

Z60N

Untitled

AF 239 S

2sc1965

TRANSISTOR SE 135

Untitled

3055 transistor

2SC3133

Untitled

Transistor BFX 90

Untitled

2SC3908

Transistor BFr 99

2SC2540

TRANSISTOR 2SC

TRANSISTOR J 5804