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    TRANSISTOR 2SD1857 Search Results

    TRANSISTOR 2SD1857 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 2SD1857 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR  FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz)  ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R

    TO92NL

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857G-x-T92-K 2SD1857L-x- T92-R 2SD1857G-x- TO92NL

    2SD1875

    Abstract: 2Sd-1875
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1875L-x-T92-B 2SD1875G-x-T92-B 2SD1875L-x-T92-K 2SD1875G-x-T92-K 2SD1875L-x- T92-R 2SD1875G-x- 2SD1875 2Sd-1875

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) „ ORDERING INFORMATION


    Original     		PDF 2SD1857 80MHz) 2SD1857L-x-T60-K 2SD1857G-x-T60-K 2SD1857L-x-T6S-K 2SD1857G-x-T6S-K 2SD1857L-x-TM3-T 2SD1857G-x-TM3-T 2SD1857L-x-T92-B 2SD1857G-x-T92-B

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251


    Original     		PDF 2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K

    2SD1857

    Abstract: 2sd1857l
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR „ 1 FEATURES TO-92 * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL 1 TO-251


    Original     		PDF 2SD1857 80MHz) O-92NL O-251 O-92NL O-251 2SD1857L-x-T92-B 2SD1857G-x-T92-B 2SD1857L-x-T92-K 2SD1857 2sd1857l

    2SD1857L

    Abstract: QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92NL *Pb-free plating product number: 2SD1857L


    Original     		PDF 2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T9N-A-B 2SD1857L-x-T9N-A-B 2SD1857-x-T9N-A-K 2SD1857L-x-T9N-A-K 2SD1857L-x-T9N-A-B O-92NL 2SD1857L QW-R211-014 2SD1857 2SD1857l to-92nl package 80-MHz

    2SD1857L

    Abstract: 2SD1857
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD1857 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES * High breakdown voltage. BVCEO=120V * Low collector output capacitance.(Typ.20pF at VCB=10V) * High transition frequency.(fT=80MHz) 1 TO-92 1 TO-92NL *Pb-free plating product number: 2SD1857L


    Original     		PDF 2SD1857 80MHz) O-92NL 2SD1857L 2SD1857-x-T92-B 2SD1857L-x-T92-B 2SD1857-x-T92-K 2SD1857L-x-T92-K 2SD1857-x-T9N-B 2SD1857L-x-T9N-B 2SD1857L 2SD1857

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SD1857 80MHz) QW-R201-057

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SD1857 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High breakdown voltage. BVCEO=120V *Low collector output capacitance.(Typ.20pF at VCB=10V) *High transition frequency.(fT=80MHz) 1 TO-92 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C)


    Original     		PDF 2SD1857 80MHz) 30MHz. QW-R201-057

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    2SB1275

    Abstract: 2SB1236A 2SD1857A 2SD1918 50MHZ
    Text: 2SB1275 / 2SB1236A Transistors Power Transistor −160V , −1.5A 2SB1275 / 2SB1236A zFeatures 1) High breakdown voltage.(BVCEO = −160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A -160V -160V) 50MHZ) 2SD1918 2SD1857A. 2SB1275 2SB1236A 2SD1857A 50MHZ

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A. Dimensions (Unit : mm)


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 / 2SD1857 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 zExternal dimensions (Unit : mm) 4.5 1.6 1.5 2.5 4.0 2SC4132 0.5 zFeatures 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V)


    Original     		PDF 2SC4132 2SD1857 80MHz) 2SB1236. 2SC4132 2SD1857 SC-62

    2SD1918

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A zDimensions (Unit : mm) zFeatures 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1236A. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1236A. 2SD1857A 2SD1918 SC-63 R0039A

    Untitled

    Abstract: No abstract text available
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. Dimensions (Unit : mm) 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A

    2SD2211

    Abstract: 80MHZ 2SB1275 2SD1857A 2SD1918 PW200
    Text: Power Transistor 160V , 1.5A 2SD1918 / 2SD1857A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO=160V) 2) Low collector output capacitance. (Typ. 20pF at VCB=10V) 3) High transition frequency.(fT=80MHZ) 4) Complements the 2SB1275. 5.1


    Original     		PDF 2SD1918 2SD1857A 80MHZ) 2SB1275. 2SD1918 R1010A 2SD2211 80MHZ 2SB1275 2SD1857A PW200

    2SB1275

    Abstract: 2SD1918 2SB127 160V2 2SB1236A 2SD1857A 50MHZ
    Text: Power Transistor 160V, 1.5A 2SB1275 / 2SB1236A Dimensions (Unit : mm) Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 30pF at VCB = 10V) 3) High transition frequency.(fT = 50MHZ) 4) Complements the 2SD1918 / 2SD1857A.


    Original     		PDF 2SB1275 2SB1236A 50MHZ) 2SD1918 2SD1857A. 2SB1275 R0039A 2SB127 160V2 2SB1236A 2SD1857A 50MHZ

    2SB1236

    Abstract: 2SD1857 transistor 120v
    Text: 2SB1236 Transistors Power Transistor −120V, −1.5A 2SB1236 zFeatures 1) High breakdown voltage. (BVCEO = −120V) 2) Low collector output capacitance. (Typ. 30pF at VCB = −10V) 3) High transition frequency. (fT = 50MHz) 4) Complements the 2SD1857. zExternal dimensions (Unit : mm)


    Original     		PDF 2SB1236 -120V, -120V) 50MHz) 2SD1857. 65Max. 2SB1236 2SD1857 transistor 120v

    2SD2211

    Abstract: 2SD2211 hfe 2SB1236A 2SB1275 2SD1857A 2SD1918 80MHZ T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD2211 / 2SD1918 / 2SD1857A zExternal dimensions (Unit : mm) 2SD2211 4.0 1.0 1.5 0.4 2.5 0.5 (1) 1.6 0.5 3.0 (2) 4.5 zFeatures 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance.


    Original     		PDF 2SD2211 2SD1918 2SD1857A 80MHZ) 2SB1275 2SB1236A. 2SD2211 2SD2211 hfe 2SB1236A 2SD1857A 80MHZ T100

    2SB1236

    Abstract: 2SD1857
    Text: Power Transistor 120V, 2A 2SD1857 Dimensions (Unit : mm) 2SD1857 2.5 1.0 0.65Max. 0.5 4.4 0.9 6.8 14.5 Features 1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz)


    Original     		PDF 2SD1857 65Max. 80MHz) 2SB1236. R0039A 2SB1236 2SD1857

    2SD1857

    Abstract: Transistor 2SD1857 2SB1236 2SC4132 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB
    Text: 2SC4132 / 2SD1857 / 2SD2343 Transistors Power Transistor 120V, 1.5A 2SC4132 / 2SD1857 / 2SD2343 ! Features ! External dim ensions (Units : mm) 1) High breakdown voltage. (BVceo = 120V) 2) Low collector output capacitance. 2SC4132 (Typ. 20pF at V cb = 10V)


    OCR Scan     		PDF 2SC4132 2SD1857 2SD2343 80MHz) 2SB1236. 2SD1857 Transistor 2SD1857 2SB1236 2SD2343 T100 05 marking code transistor ROHM transistor 120v MPT3 marking CB

    2SD1857A

    Abstract: No abstract text available
    Text: 2SB1236A Transistor, PNP Features Dimensions Units : mm • available in ATV TV2 package • 2SB1236A (ATVTV2) • high collector breakdown voltage BV qeo = —160 V high transition frequency • low output capacitance • complementary pair with 2SD1857A


    OCR Scan     		PDF 2SB1236A 2SD1857A 2SB1236A

    2SB1275

    Abstract: 2SD1857A 2SD1918 2SD2211 T100
    Text: 2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor 160V , 1.5A 2SD221112SD191812SD1857A •Features 1) High breakdown voltage.(BVcEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at Vcb = 10V) 3) High transition frequency.(fr = 80MHz) 4) Complements the 2SB1275/2SB1236A.


    OCR Scan     		PDF 2SD2211 2SD1918 2SD1857A 2SD221112SD191812SD1857A 80MHz) 2SB1275 /2SB1236A. 100ms 2SD1857A T100