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    TRANSISTOR 30 J 127 Search Results

    TRANSISTOR 30 J 127 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 30 J 127 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor r1009

    Abstract: ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor
    Text: SERVICE MANUAL 80 cm CTV Effective: MAY 2000 CTM805SVSERV PART NUMBER 107-800455-4G 113-101005-17 113-102005-17 113-103005-17 113-109005-17 113-473005-17 113-682005-17 127-476042-0D 130-600101-0G 131-210719-19 131-230945-00 133-803010-33 172-726000-99 190-R63300-02


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    CTM805SVSERV 107-800455-4G 127-476042-0D 130-600101-0G 190-R63300-02 774-R63301-00 774-R63302-00 774-R63303-00 849-R63301-00 892-R63301-06 transistor r1009 ctv350s ZD405 OPT601 r63302 ic902 TH901 q702 transistor w17 transistor philips carbon film resistor PDF

    tip122 transistor

    Abstract: TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121
    Text: TIP120, 121, 122, 125, 126, 127 Darlington Transistors Features: • Designed for general-purpose amplifier and low speed switching applications. • Collector-Emitter sustaining voltage-VCEO sus = 60V (Minimum) - TIP120, TIP125 80V (Minimum) - TIP121, TIP126


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    TIP120, TIP125 TIP121, TIP126 TIP122, TIP127. tip122 transistor TIP120 TIP 422 transistor TRANSISTOR tip122 darlington tip 122 TRANSISTOR tip122 features TIP127 transistor TIP 662 tip120 darlington TIP121 PDF

    78S40

    Abstract: MA 78S40 regulator RS 262-466 78S40 Switching Voltage Regulator oscillator circuit with op amp 741 its output 1N4001 1N5401 2N5876 RM10
    Text: Issued March 1991 008-127 Data Pack J Data Sheet Switching regulator 78S40 RS stock number 657-729 The 78S40 is a monolithic switching regulator IC consisting of all the active building blocks necessary for switching regulator systems. The device can be used


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    78S40 78S40 400nH/turns2. MA 78S40 regulator RS 262-466 78S40 Switching Voltage Regulator oscillator circuit with op amp 741 its output 1N4001 1N5401 2N5876 RM10 PDF

    Transistor GE 44

    Abstract: tyco igbt
    Text: V23990-P188-A10 flow PIM 2, 1200V, 36A Version 0601 Maximum Ratings / Höchstzulässige Werte at Tj=25°C, unless otherwise specified Parameter Input Rectifier Bridge Gleichrichterbrücke Repetitive peak reverse voltage Periodische Rückw. Spitzensperrspannung


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    V23990-P188-A10 D81359 Transistor GE 44 tyco igbt PDF

    cpm1-cif11

    Abstract: omron CPM1-CIF01 rs 232 manual omron srt2-id16 SRT2-ROC16 OMRON MANUAL CPM1-CIF01 transistor C3306 omron SRT2-OD16-1 SRT2-ID16T-1 CPM1-CIF01 PIN OUT 16 to 4 encoder
    Text: R Distributed I/O Controller SRM1 The SRM1’s high-speed distributed I/O controller is a revolutionary design in PLC control. The SRM1 places all the processing power and control in the ultra compact master unit and allows you to distribute up to 256 points of I/O via a twisted pair network. You


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    RS-232C 1-800-55-OMRON cpm1-cif11 omron CPM1-CIF01 rs 232 manual omron srt2-id16 SRT2-ROC16 OMRON MANUAL CPM1-CIF01 transistor C3306 omron SRT2-OD16-1 SRT2-ID16T-1 CPM1-CIF01 PIN OUT 16 to 4 encoder PDF

    GP 809 DIODE

    Abstract: GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


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    RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz GP 809 DIODE GP 007 DIODE PDF

    GP 809 DIODE

    Abstract: GP 839 DIODE RD01MUS2B 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE
    Text: < Silicon RF Power MOS FET Discrete > RD01MUS2B RoHS Compliance, Silicon MOSFET Power Transistor 527MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS2B is a MOS FET type transistor specifically 4.4+/-0.1 TYPE NAME LOT No. 0.8 MIN 2.5+/-0.1 This device has an internal monolithic zener diode from


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    RD01MUS2B 527MHz RD01MUS2B 15dBTyp, 527MHz Nov2011 GP 809 DIODE GP 839 DIODE 4406 mosfet diode zener 7.2v RD01MUS2B-101 gp 520 diode diode gp 805 mosfet vhf power amplifier GP 007 DIODE PDF

    LP1983

    Abstract: motorola 039
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LP1983 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in high-gain, low-noise, small-signal amplifiers. lc = 30 mA HIGH-FREQUENCY TRANSISTOR NPN SILICON • High Current-Gain — Bandwidth Product — f j = 4.5 GHz Typ


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    LP1983 MRF901 Temperat13 IS22I LP1983 motorola 039 PDF

    Helipot POTENTIOMETER

    Abstract: 2N4947 transistor WL 431 Helipot 2N4949 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan
    Text: The documentation and process conversion | measures necessary to comply with this | revision shall be completed by Q 9 - 3 0 - 92 J MIL-S-19500/388B 30 J u n e 1992 SUPERSEDING MIL-S-19500/388A 11 July 1983 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PN, SILICON, UNIJUNCTION


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    MIL-S-19500/388B MIL-S-19500/388A 2N4947, 2N4948, 2N4949 MIL-S-19500. Helipot POTENTIOMETER 2N4947 transistor WL 431 Helipot 2N4947 JAN 2N4948 JANTX TXAL118B.388B 2N4948 2n4948 jan PDF

    RTM 866 - 485

    Abstract: No abstract text available
    Text: 32E J> • 023ti32Q OGlb^QH 1 « S I P NPN Silicon RF Transistor BFP 93A .SIEMENS/ SPCLi S E M I C O N D S _ • For broadband amplifiers and oscillators up to 2 GHz at collector currents from 5 to 30 mA. E CECC-type in preparation: CECC 50002/. ESD: Electrostatic discharge sensitive device, observe handling precautions!


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    023ti32Q BFP93A 62702-F OT-143 RTM 866 - 485 PDF

    transistor K 3565

    Abstract: JD127 transistor 45 f 122 2N6040-2N6045 MOTOROLA MJD122 jd122
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* Com plem entary Darlington Power Transistors PNP M JD 127* DPAK For Surface Mount Applications *Motoro<a Pr«ftffd Device Designed for general purpose amplifier and low speed switching applications. SILICON


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    2N6040-2N6045 TIP120-TIP122 TIP125-- TIP127 MJD122 MJD127 transistor K 3565 JD127 transistor 45 f 122 MOTOROLA MJD122 jd122 PDF

    MOTOROLA MJD122

    Abstract: transistor 3568 darlington transistor with built-in temperature c TIP125-TIP127 1N5825 369A-13 MJD122 MJD127 MSD6100 WR-250
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JD122* PNP M JD 127* Com plem entary Darlington Power Transistors DPAK For Surface Mount Applications •Motorola Preferred Dtvlct Designed for general purpose amplifier and low speed switching applications. •


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    2N6040-2N6045 TiP120-T TIP125-TIP127 MJD122 MJD127 JD122 MOTOROLA MJD122 transistor 3568 darlington transistor with built-in temperature c 1N5825 369A-13 MJD127 MSD6100 WR-250 PDF

    SD1272

    Abstract: SD1272-2 M113
    Text: • Æ SR J ipl°? a itsn — -, ? iW IC r D S G f f ll W W W »»»» P ro g re s s P o w e re d b y T ec h no log y 140 Commerce Drive M ontgom eryville, PA 18936-1013 Tel: 215 631-9840 o n . 0 7 0 SD 1272-2 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS


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    SD1272-2 230MHz 175MHz SD1272-2 S88SD1272-2 SD1272 M113 PDF

    2SC3230

    Abstract: 2SA1276
    Text: SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS 2SC3230 APPLICATIO N S • Pow er A m plifier A pplications Car Radio, C a r S t e r e o O utput S ta g e Am plifier I •j Applications. FEA TU R ES • C om plem entary to ) 2 S A 1276 5 W atts O utput A p p lic a tio n s .


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    2SC3230 2SA1276 2SC3230 2SA1276 PDF

    AJB-4

    Abstract: BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l E3122
    Text: SIEM ENS ñ23SbüS 00*12701 T07 H PROFET BTS 432 12 Smart Highside Power Switch Product Summary Features * * * * * * * * * * * * Load dump and reverse battery protection1 VLoad dump Clamp of negative voltage at output Vbb- V buT Avalanche Short-circuit protection


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    235b05 TQ-220AB/5 Q67060-S6204-A2 O-22QAB/5, E3122 I2E3122A Q67060-S6204-A3 023SbGS AJB-4 BTS43212 transistor SMD t07 zener zd 501 bts 425 l1 st smd diode VU 5C smd siemens scr smd transistor 5c l PDF

    783C

    Abstract: DARLINGTON TRANSISTOR ARRAY LB1272
    Text: Ordering number: EN 783C Monolithic Digital 1C LB 1272 N0.783C 6-Unit, Darlington Transistor Array The circuit configuration of this 1C is a 6-u nit Darlington transistor array consisting of NPN transistors and is ideally suited for use in printer ham m er driving, lamp or relay driving applications.


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    18-digit 783C DARLINGTON TRANSISTOR ARRAY LB1272 PDF

    UM91260B

    Abstract: UM91260C znr 10k 270 UM91260 UM91261 3 x 4 keypad to 7 segment decoder DP 25 H 1200 T
    Text: UNICORN MICROELECTRONICS 24E S • 1276781 0001286 8 ■ U M 91260/61 10 Memory Tone/Puls» Dialer Features ■ 32-digit redial memory 31 digits in tone mode ■ Ten indirect memories, 16 digits in pulsé mode, 15 digits in tone mode' ■ Tone/Pulse mode switching via slide switch (4.1 second


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    UM91260/61 32-digit UM91261 UM91260/61 16-digit UM91260 UM91260B UM91260C znr 10k 270 3 x 4 keypad to 7 segment decoder DP 25 H 1200 T PDF

    floppy disk motor head driver

    Abstract: t2d4 floppy disk motor head step 555 timer for 12v supply Hitachi stepping motor ha1664 stepping motor coil construction HA16640NT FDD STEP MOTOR HA1663
    Text: 4496204^l u rtJÉTMiì«iBgr-nfÌrJi-«iì T ACHÎ/ MCU/MPU 92D mTfT — 12713 D \i-fk -aiiteagiiife T ~ S 2 -3 3 ~ ~ // ïm $ HA16640NT Preliminary February 1985 Write/Mechanism Controller fo r Floppy Disk Drive This 1C can provide W R IT E + M E C H A N IS M C O N T R O L function is one chip fo r FLO P P Y


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    HA16640NT floppy disk motor head driver t2d4 floppy disk motor head step 555 timer for 12v supply Hitachi stepping motor ha1664 stepping motor coil construction HA16640NT FDD STEP MOTOR HA1663 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127500 08/97 International IO R Rectifier m t .KB THREE PHASE BRIDGE SERIES Power Modules Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case


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    E78996 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127500 08/97 International IG R Rectifier m t. TH R E E PHASE B RIDG E KB SERIES Power Modules Features • Package fully compatible with the industry standard INT-A-pak power modules series ■ High thermal conductivity package, electrically insulated case


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    E78996 554S2 60-70MT. PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127501 08/97 International Iw R Rectifier m t. Power Modules THREE PHASE BRIDGE Features • P a ckag e fully com patible with the industry standard IN T-A -pak pow er m odules series ■ High therm al conductivity p ac kag e, electrically insulated case


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    PDF

    KE721K03

    Abstract: No abstract text available
    Text: 3TE D POWEREX INC • 00GMM3M A « P R X mMMVDL Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G, Duranti, BP107,72003 Le Mans, France (43) 41.14.14 KE721KÓ3HB High-Beta r - 3 3 - j r S iX -D a r U fig t O n


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    00GMM3M BP107 KE721KÃ BP107, KE721K03HB Amperes/1000 KE721K03 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMELAB PLC faPE D m 6133137 OGOOflTb 127 • S f l L B llll MOS POWER 4 IGBT 'Tin-j iFFi llll SEM E SML30G60AN LAB 600V 30A N -CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: T c = 25°C unless otherwise specified.


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    SML30G60AN SML30G600AN PDF

    tt 3043 Transistor 5 pin type

    Abstract: transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC
    Text: N T E ELECTRONICS INC S5E T> bM aiSST DQQEbfl? STS « N T E T-H \-*O I D INDICATORS NTE TVI» No. Description and Application Dtag. NO. «y Per Bag Ind Pkg S ia Typical Viewing Angle Viewed ' Color Typical Maximum (Volts) Breakdown voltage (Vorta) Maximum


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    G0057D2 tt 3043 Transistor 5 pin type transistor sj 3161 transistor TT 3043 SCR K 3155 transistor NTE3090 NTE519 NTE3078 scr nte 480 NTE cross 160A TRIAC PDF