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    TRANSISTOR 313 SOT Search Results

    TRANSISTOR 313 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2712 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC3325 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.5 A / hFE=70~240 / VCE(sat)=0.25 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC2713 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=0.1 A / hFE=200~700 / VCE(sat)=0.3 V / AEC-Q101 / SOT-346 Visit Toshiba Electronic Devices & Storage Corporation
    2SC4116 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=70~700 / VCE(sat)=0.25 V / AEC-Q101 / SOT-323 Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 313 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


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    WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910 PDF

    transistor 313 smd

    Abstract: BUK9515-100A BUK9615-100A SC18
    Text: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET BUK9515-100A BUK9615-100A GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope available in TO220AB and SOT404 . Using


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    BUK9515-100A BUK9615-100A O220AB OT404 O220AB transistor 313 smd BUK9515-100A BUK9615-100A SC18 PDF

    transistor 313 sot23

    Abstract: npn 313 sot-23 DARLINGTON SOT-23 darlington sot23 pnp SOT 363 darlington
    Text: Type Number Collector to Emitter Voltage DC Current Gain Saturation Voltage, Collector to Emitter Gain Bandwidth Product VCEO hFE @ VCEO / IC VCE SAT @ IC / IB fT @ VCE / IC V Min-Max V / mA Max. V mA / mA MHZ V / mA PNP Transistors / SOT-23 MMBT2907A MMBT3906


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    OT-23 MMBT2907A MMBT3906 MMBT4403 MMBTA55 MMBTA56 MMBTA92 MMBT4126 MMBT5401 100min transistor 313 sot23 npn 313 sot-23 DARLINGTON SOT-23 darlington sot23 pnp SOT 363 darlington PDF

    2SB766A

    Abstract: RN5RF30A RN5RF50A
    Text: LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-0204 515 6 5,(6 OUTLINE 7KH 515) 6HULHV DUH &026EDVHG YROWDJH UHJXODWRU ,&V ZKLFK FRQWURO H[WHUQDO GULYHU WUDQVLVWRUV ZLWK KLJK ULS SOH UHMHFWLRQ KLJK DFFXUDF\ RXWSXW YROWDJH ORZ VXSSO\ FXUUHQW (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROW


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    EA-043-0204 026EDVHG RN5RF30A 2SB766A 2SB766A RN5RF30A RN5RF50A PDF

    4139 temperature

    Abstract: RN5RF RN5RF30A RN5RF50A 75W PNP
    Text: /2:#5,33/ #92/7$*( 5(*8/$725#:,7+#(;7(51$/ 75$16,6725 5185 #6(5,(6 $33/,&$7,21#0$18$/ NO. EA-043-0006 LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR 5185)#6(5,(6 OUTLINE /


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    EA-043-0006 RN5RF30A 4139 temperature RN5RF RN5RF30A RN5RF50A 75W PNP PDF

    Untitled

    Abstract: No abstract text available
    Text: RN 5 RF SERI ES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


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    EA-043-111116 Room403, Room109, 10F-1, PDF

    Untitled

    Abstract: No abstract text available
    Text: RN5RF SERIES LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-111116 OUTLINE The RN5RF Series are CMOS-based voltage regulator ICs which control external driver transistors with high ripple rejection, high accuracy output voltage, low supply current. Each of these voltage regulator ICs consists of


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    EA-043-111116 Room403, Room109, PDF

    BC847BS

    Abstract: NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F
    Text: BC847BS 45 V, 100 mA NPN/NPN general-purpose transistor Rev. 03 — 18 February 2009 Product data sheet 1. Product profile 1.1 General description NPN/NPN general-purpose transistor pair in a very small SOT363 SC-88 Surface-Mounted Device (SMD) plastic package.


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    BC847BS OT363 SC-88) BC857BS. BC847BS NXP SMD TRANSISTOR MARKING CODE BC847BS nxp TRANSISTOR SMD CODE PACKAGE SOT363 pnp transistor 313 smd TRANSISTOR SMD MARKING CODES BC857BS transistor smd code marking 102 transistor SMD MARKING CODE SMD TRANSISTOR MARKING 1F PDF

    Untitled

    Abstract: No abstract text available
    Text: PhlHps^Semiconductors_ M b b 5 3 H 31 0 0 313 3 H 314 H APX Product specification NPN 7 GHz wideband transistor BFG195 N AUER PHIL IPS/DISCRETE DESCRIPTION bHE D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for wideband


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    BFG195 PDF

    11105 IC

    Abstract: npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5
    Text: BFS17 NPN Silicon planar RF transistor BFS 17 is an epitaxial NPN silicon planar RF transistor in a plastic package 23 A 3 DIN 41 869 SOT-23 , for use in film circuits up into the GHz range. The transistor marked: MA 1±M5 1-0.05 r* * ? * * • ; T ype Code


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    BFS17 OT-23) Q62702-F337 11105 IC npn transistor w5 BFS17 ic 11105 circuits voltage Transistor code 1z bfs17 mark SOT23 code fj transistor 313 sot23 transistor x 313 RF TRANSISTOR SOT23 5 PDF

    Untitled

    Abstract: No abstract text available
    Text: Philip« Semiconductors 711Dô2b G 0 b û 4 0 cl 3 T a • PH IN PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and


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    BC807W; BC808W OT323 BC807W: BC807-16W BC807-25W BC807W BC807-40W PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Sem iconductors Product specification PNP general purpose transistor FEATURES BC807W; BC808W PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323 package, for general switching and amplification. PINNING - SOT323


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    BC807W; BC808W OT323 BC807-25W BC807W BC807-40W BC807-16W BC807W: PDF

    transistor Common Base amplifier

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN microwave power transistor FEATURES PZB16035U PINNING - SOT443A • Interdigitated structure provides high emitter efficiency PIN • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR


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    OT443A PZB16035U transistor Common Base amplifier PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES PINNING - TO-92 SOT54 variant • Direct interface to C-MOS, TTL, etc. PIN SYMBOL DESCRIPTION • High-speed switching 1 g • No secondary breakdown.


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    1997Jun PDF

    Transistor marking S

    Abstract: BC807-16W BC807-25W BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W
    Text: bhSa^l P hilip s Sem iconductors 002M443 STT IAPX Product specification PNP general purpose transistor BC807W; BC808W AUER PHILIPS/DISCRETE FEATURES b?E PIN CONFIGURATION • High current • S- mini package. DESCRIPTION PNP transistor in a plastic SOT323


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    LhS3T31 002M443 BC807W; BC808W OT323 OT323 MAM037 BC807W: BC807-16W BC807-25W Transistor marking S BC807-40W BC807W BC808-16W BC808-25W BC808-40W BC808W PDF

    BU826

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bb53^31 DG5fi31M Mfl? I IAPX b=IE D BU826 BU826A SILICON DARLINGTON POWER TRANSISTOR M onolithic high voltage npn Darlington circu it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast switching application.


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    DG5fi31M BU826 BU826A 7Z88075 BU826 PDF

    TRANSISTOR a32

    Abstract: g3ki A32 SOT23
    Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCE0 = 40 V (min) at lc = 1.0 mA 1, 9 ± 0 ,2 10 .9 5 0 .9 5 f T excellent gain linearity from lOOjiAto


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    OT-23) SST6839 BC857B BC858B TRANSISTOR a32 g3ki A32 SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: Die no. A-32 PNP small signal transistor Features Dimensions Units : mm available in an SST3 (SST, SOT-23) package, see page 300 SST3 collector-to-emitter breakdown voltage, BVCEO = 40 V (min) at lc = 1.0 mA 0 .4 5 ± 0 .1 excellent gain linearity from 100 (iA to


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    OT-23) SST6839 BC857B BC858B PDF

    W1p TRANSISTOR

    Abstract: transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50
    Text: Philips Sem iconductors 1^53131 0025366 774 M A P X AMER P H I L I P S / D I S C R E T E Product specification b?E PNP 5 GHz wideband transistor DESCRIPTION ^ BFT92 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily Intended for use in RF


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    BFT92 BFR92 BFR92A. W1p TRANSISTOR transistor w1P w1p npn SOT23 W1P W1P 59 transistor w1p 60 W1P 51 W1p 69 W1P 66 transistor W1P 50 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • W = 1'2 - 2-0 V Type BSP 318 Vbs 60 V Type BSP 318 Ordering Code Q67000-S127 b 2.6 A ñ DS on) 0.15 Ci Package Marking SOT-223 BSP 318


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    Q67000-S127 OT-223 E6327 fi23SbQS a23SbQS fl235b05 PDF

    TRANSISTOR 318

    Abstract: BSP 312 BSP318 MU diode MARKING CODE
    Text: SIEMENS BSP 318 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • V GS th = 1.2 .2.0 V Type BSP 318 VÒS 60 V b 2.6 A Type BSP 318 Ordering Code Q67000-S127 ffDS(on) 0.15 £2 Package Marking SOT-223


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    OT-223 Q67000-S127 E6327 OT-223 TRANSISTOR 318 BSP 312 BSP318 MU diode MARKING CODE PDF

    BU826A

    Abstract: BU826 BD227 FL01 5A/M39029/BU826A
    Text: N AMER PHILIPS/DISCRETE b TE D • bb53T31 0020314 4fl7 H A P X BU826 BU826A , SILICON DARLINGTON POWER TRANSISTOR M o n o lith ic high voltage npn D arlin g to n c irc u it w ith integrated speed-up diode in a plastic SOT93 envelope, intended fo r fast sw itching ap p lica tio n.


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    bb53T31 BU826 BU826A BU826 7Z88187 BU826A BD227 FL01 5A/M39029/BU826A PDF

    BFQ23C

    Abstract: BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173
    Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features


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    BFP91A 711002b 00453bb OT173 OT173X BFQ23C. OT173. D-160 BFQ23C BFP91A t-31-21 537D UBB843 BFP91A NPN PHILIPS SOT173 PDF

    Transistor SSI 5504 175

    Abstract: transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663
    Text: Philips Semiconductors Product specification NPN 6 GHz wideband transistor philips international DESCRIPTION BFP91A SbE ]> 711002b G0453bb bG4 PINNING NPN transistor in hermetically-sealed sub-miniature SOT173 and SOT 173X micro-stripline envelopes. It features


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    BFP91A 711002b G0453bb OT173 BFQ23C. OT173. Transistor SSI 5504 175 transistor b 1238 SSI 5504 175 0507 transistor 0235S2 BFP91A transistor d 1663 PDF