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    TRANSISTOR 318A Search Results

    TRANSISTOR 318A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 318A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9331LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF9331LT1 Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is


    Original     		PDF MRF9331LT1/D MRF9331LT1 MRF9331LT1/D*

    Untitled

    Abstract: No abstract text available
    Text: IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com • High Current: IC = 500 mA max • This is a Pb−Free Device 3 (2) (1) MAXIMUM RATINGS (TA = 25°C) Rating


    Original     		PDF IMD10AMT1G IMD10AMT1G/D

    Untitled

    Abstract: No abstract text available
    Text: IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com • High Current: IC = 500 mA max • This is a Pb−Free Device 3 MAXIMUM RATINGS (TA = 25°C) Rating (1) R1 Symbol


    Original     		PDF IMD10AMT1G IMD10AMT1G/D

    IMD10AMT1G

    Abstract: No abstract text available
    Text: IMD10AMT1G Dual Bias Resistor Transistor NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com • High Current: IC = 500 mA max • This is a Pb−Free Device 3 (2) (1) MAXIMUM RATINGS (TA = 25°C) Rating


    Original     		PDF IMD10AMT1G SC-74 SC-74R 318AA IMD10AMT1G/D

    MMBR521LT1

    Abstract: MRF5211LT1 TO-236-AA
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MMBR521LT1/D* MRF5211LT1 TO-236-AA

    HP11608A

    Abstract: MRF0211LT1 MRF5711LT1 S212
    Text: MOTOROLA Order this document by MRF0211LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF0211LT1 . . . designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MRF0211LT1/D MRF0211LT1 MRF5711LT1 MRF0211LT1/D* HP11608A MRF0211LT1 MRF5711LT1 S212

    MRF5811LT1

    Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1/D* MRF5811LT1 MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B

    MRF5811

    Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
    Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz


    Original     		PDF MRF5811LT1/D MRF5811LT1 MRF5811LT1 MRF5811LT1/D MRF5811 MRF5811L TRANSISTOR SF 128 HP11590B HP11590

    MMBR521LT1

    Abstract: MRF5211LT1
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    Original     		PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MRF5211LT1

    mps901

    Abstract: MRF901
    Text: MOTOROLA Order this document by MMBR901LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MMBR901LT1, T3 High-Frequency Transistor MPS901 MRF901 Designed primarily for use in high–gain, low–noise small–signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    Original     		PDF MMBR901LT1/D MMBR901LT1, MPS901 MRF901 MRF9011LT1 MRF9011LT1) MRF901

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    MRF966

    Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
    Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier


    OCR Scan     		PDF MRFG9661/D MRFG9661/9661R MRFG9661/D MRF966 MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R

    motorola 304

    Abstract: MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075
    Text: Order this document by MRFG9801/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9801 MRFG9801R Advance Information The RF Line N-Channel Dual-Gate G a A s Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion mode dual-gate MES FET designed for high frequency amplifier


    OCR Scan     		PDF MRFG9801/D MRFG9801/9801R MRFG9801/D motorola 304 MRFG9801 MRFG9801R hp89 HP8970A dual-gate K31S HP11590B Eaton 2075

    MRF9331

    Abstract: MRF93
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9331LT1 The RF Line NPN Silicon High-Frequency Transistor . . . designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is critical.


    OCR Scan     		PDF MRF9331LT1 OT-143 MRF9331L MRF9331 MRF93

    transistor x 13002

    Abstract: No abstract text available
    Text: TO SHIBA TD62318AP/AF TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62318AP, TD62318AF 4CH LOW INPUT ACTIVE HIGH-CURRENT DARLINGTON SINK DRIVER The TD62318AP, TD62318AF are non-inverting transistor array which are comprised of four NPN darlington output


    OCR Scan     		PDF TD62318AP/AF TD62318AP, TD62318AF TD62318AF 700mA DIP16-P-300-2 transistor x 13002

    A5 GNE mosfet

    Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA


    OCR Scan     		PDF 1PHX11136Q-14 A5 GNE mosfet jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    MMBR901LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MMBR901LT1, T3 MRF9011LT1 Designed primarily for use in high-gain, low-noise small-signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching


    OCR Scan     		PDF MMBR901LT1, MRF9011LT1 MRF9011LT1) OT-23 OT-143 MRF9011LT1 MMBR901LT1

    NAX 143-1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high-gain, low -noise sm all-signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


    OCR Scan     		PDF MMBR521LT1) MRF5211LT1) MMBR521LT1 MRF5211LT1 OT-23 T-143 NAX 143-1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) MRF5811LT1

    MRF5811L

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion High Gain


    OCR Scan     		PDF MRF5811LT1 18A-05, OT-143) Vol98 MRF5811LT1 MRF5811L

    MRF9331LT1

    Abstract: marking 099 MRF9331 R/LC-094
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor MRF9331LT1 Designed prim arily for use in low power am plifiers to 1.0 GHz. Ideal for pagers and other battery operated system s where low power consumption is critical.


    OCR Scan     		PDF MRF9331LT1 HIG134 MRF9331LT1 marking 099 MRF9331 R/LC-094

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503