MRF5811
Abstract: MRF5811L TRANSISTOR SF 128 HP11590B HP11590
Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1/D
MRF5811LT1
MRF5811LT1
MRF5811LT1/D
MRF5811
MRF5811L
TRANSISTOR SF 128
HP11590B
HP11590
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PD-232
Abstract: HER307 Motorola 581 MRF577 motorola 549 diode SF-11N MRF577T1 S212
Text: MOTOROLA Order this document by MRF577T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF577T1 NPN Silicon High-Frequency Transistor Designed for low noise, wide dynamic range front end amplifiers at frequencies to 1.5 GHz. Specifically aimed at portable communication devices
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MRF577T1/D
MRF577T1
70/SOT
PD-232
HER307
Motorola 581
MRF577
motorola 549 diode
SF-11N
MRF577T1
S212
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transistor fb 31n
Abstract: MRF5815 case 317-01 mrf581 SF-11N 5812 MOTOROLA 118-136 mhz specifications of ic 1408 MRF5812 MRF5812R1
Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon MRF581 High-Frequency Transistors MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion
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MRF581/D
MRF581
MRF5812R1,
MRF5812
MRF581
transistor fb 31n
MRF5815
case 317-01
SF-11N
5812 MOTOROLA
118-136 mhz
specifications of ic 1408
MRF5812R1
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MRF927
Abstract: MRF927T1 S212 HP11590B
Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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MRF927T1/D
MRF927T1
MRF927T1/D*
MRF927
MRF927T1
S212
HP11590B
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MRF941
Abstract: mrf9411
Text: MOTOROLA Order this document by MMBR941LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR941 NPN Silicon MRF941 Low Noise, High-Frequency MRF947 Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR941LT1/D
MMBR941
MRF941
MRF947
MRF9411
MRF947R,
MMBR941
MRF941
MRF947
mrf9411
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MRF9511
Abstract: MRF9511 equivalent MRF9511LT1 NF 027 J220 177.138 MMBR951 MRF957 NF 034 MMBR951ALT1
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951ALT1/D
MMBR951
MRF957
MRF9511
MMBR951LT1,
MMBR951ALT1
MRF957T1
MMBR951
MRF957
MRF9511
MRF9511 equivalent
MRF9511LT1
NF 027
J220
177.138
NF 034
MMBR951ALT1
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MRF927T1 equivalent
Abstract: Motorola 581 741 datasheet motorola MRF927 MRF927T1 MRF927T3 S212 3019 npn transistor
Text: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to
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MRF927T1/D
MRF927T1
MRF927T3
MRF927T1
MRF927T1 equivalent
Motorola 581
741 datasheet motorola
MRF927
MRF927T3
S212
3019 npn transistor
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MRF5811LT1
Abstract: MRF5811L 742 792 07 742 792 71 Transistor motorola 418 742 792 116 NF50 TUNER 0436 HP11590B
Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN Silicon High-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1/D
MRF5811LT1
MRF5811LT1/D*
MRF5811LT1
MRF5811L
742 792 07
742 792 71
Transistor motorola 418
742 792 116
NF50
TUNER 0436
HP11590B
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MRF917T1
Abstract: Sot323 MRF917T1
Text: MOTOROLA Order this document by MRF917T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front end amplifiers, at frequencies to 1.5 GHz. Specifically aimed at portable communication devices
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MRF917T1/D
MRF917T1
70/SOT
MRF917T1
MRF917T1/D
Sot323 MRF917T1
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ic 8259
Abstract: marking AF SOT mrf9511 sps 6580
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951/D
MMBR951
MRF957
MRF9511
MMBR951LT1
MRF957T1
MRF9511LT1
ic 8259
marking AF SOT
sps 6580
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MRF951
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBR951ALT1/D SEMICONDUCTOR TECHNICAL DATA MMBR951 The RF Line NPN Silicon MRF951 Low Noise, High-Frequency MRF957 Transistors MRF9511 Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951ALT1/D
MMBR951
MRF951
MRF957
MRF9511
MMBR951LT1,
MMBR951ALT1
MMBR951
MRF951
MRF957
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motorola 7673 A
Abstract: MMBR951 MRF957 sot-23 marking 7z MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 25SEP01
Text: The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951/D
MMBR951
MRF957
MMBR951LT1
MRF957T1
MMBR951
motorola 7673 A
MRF957
sot-23 marking 7z
MMBR951ALT1
MMBR951LT1
MRF957T1
NF50
25SEP01
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MRF917T1
Abstract: mrf917 S212 HP11590
Text: MOTOROLA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors LOW NOISE HIGH FREQUENCY TRANSISTOR CASE 419–02, STYLE 3 SC–70/SOT–323 MAXIMUM RATINGS Symbol Value Unit Collector–Emitter Voltage Rating VCEO 12 Vdc Collector–Base Voltage
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MRF917T1
70/SOT
MRF917T1
mrf917
S212
HP11590
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motorola 7673 A
Abstract: MRF957 MMBR951 MMBR951ALT1 MMBR951LT1 MRF957T1 NF50 sot-23 marking 7z Motorola 8039
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon Low Noise, High-Frequency Transistors Order this document by MMBR951/D MMBR951 MRF957 SERIES Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.
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MMBR951/D
MMBR951
MRF957
MMBR951LT1
MRF957T1
MMBR951
motorola 7673 A
MRF957
MMBR951ALT1
MMBR951LT1
MRF957T1
NF50
sot-23 marking 7z
Motorola 8039
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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MRF5811
Abstract: ADC IC 0808
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF5811LT1 Designed for high current low power am plifiers up 1o 1.0 GHz. IC = 200 mA LOW NOISE HIGH-FREQUENCY TRANSISTOR NPN SILICON • • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1
MRF5811LT1
MRF5811
ADC IC 0808
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microlab fc 730
Abstract: 5812 MOTOROLA motorola MRF5812 MRF581 MRF5812 mrf5812 equivalent MRF 434 mhz MRF 482
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1,R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion • High Gain lc = 200 mA
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MRF5812
MRF581
MRF5812R1
MRF581
MRF5812
K-200,
56-590-65/3B
microlab fc 730
5812 MOTOROLA
motorola MRF5812
mrf5812 equivalent
MRF 434 mhz
MRF 482
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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RF5812
Abstract: motorola MRF5812 MRF5812 mrf5812 equivalent
Text: MOTOROLA Order this document by MRF581/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MRF581 MRF5812R1, R2 Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz • Low Intermodulation Distortion
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MRF581/D
MRF5812
MRF581
MRF5812R1,
MRF5812
RF5812
motorola MRF5812
mrf5812 equivalent
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1 NPN S ilicon H igh-Frequency Transistor • • • • • • • • Designed for high current, low power amplifiers up to 1.0 GHz. Low Noise 2.0 dB @ 500 MHz Low Intermodulation Distortion
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MRF5811LT1
18A-05,
OT-143)
MRF5811LT1
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transistor 81 110 w 63
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Low Power Transistor ‘ European Part Number 1C = 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz. • • • •
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MRF581
transistor 81 110 w 63
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HP8542
Abstract: HP11590B transistor nf5 F581
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F5812 The RF Line NPN Silicon RF Low Power Transistor . . . designed for high current, low power amplifiers up to 2.0 GHz. • High Current-Gain — Bandwidth Product — f t = 5.5 GHz Typ @ lc = 75 mA • Low Noise — 2.0 dB (Typ) @ 500 MHz
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F5812
MRF581
MRF5812
HP8542
HP11590B
transistor nf5
F581
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MRF966
Abstract: MRF9661 HP8970A HP11590B mrf9661 motorola TRANSISTOR 318a Eaton 2075 TRANSISTOR MPS A72 2f 1001 MRFG9661R
Text: Order this document by MRFG9661/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFG9661 MRFG9661R Advance Information The RF Line N-Channel Dual-Gate GaAs Field-Effect Transistor SURFACE-MOUNTED N-CHANNEL DUAL-GATE GaAs FIELD-EFFECT TRANSISTOR . . . depletion m ode dual-gate M E S FET designed for high frequency amplifier
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MRFG9661/D
MRFG9661/9661R
MRFG9661/D
MRF966
MRF9661
HP8970A
HP11590B
mrf9661 motorola
TRANSISTOR 318a
Eaton 2075
TRANSISTOR MPS A72
2f 1001
MRFG9661R
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