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    TRANSISTOR 33 Search Results

    TRANSISTOR 33 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    transistor SD335

    Abstract: SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339
    Text: RFT Beschreibung Si-npn-Planar-Epitaxie, TO39 Si-npn-Planar-EpitaxieSC116 NF-Transistor Si-npn-Planar-EpitaxieSC117 NF-Transistor Si-npn-Planar-EpitaxieSC118 NF-Transistor Si-npn-Planar-EpitaxieSC119 NF-Transistor Si-npn-Planar-EpitaxieSC236 NF-Transistor für Vorund Treiberstufen


    Original     		PDF Si-npn-Planar-EpitaxieSC116 Si-npn-Planar-EpitaxieSC117 Si-npn-Planar-EpitaxieSC118 Si-npn-Planar-EpitaxieSC119 Si-npn-Planar-EpitaxieSC236 Si-npn-Planar-EpitaxieSC237 Si-npn-Planar-EpitaxieSC238 VorSC239 Si-pnp-Planar-EpitaxieSC307 Si-pnp-Planar-EpitaxieSC308 transistor SD335 SF126 SF127 SF128 SD337 sd336 SF137 BF241 TRANSISTOR SD349 SD339

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA143EE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA143EE 416/SC

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA124EET1 This new digital transistor is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network


    Original     		PDF LDTA124EET1 SC-89

    6aa marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA DTA114YE Preliminary Data Sheet Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 2 The BRT Bias Resistor Transistor contains a single transistor with a monolithic


    Original     		PDF DTA114YE 416/SC 6aa marking

    D1486

    Abstract: 2SC4342
    Text: DATA SHEET SILICON POWER TRANSISTOR 2SC4342 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING ORDERING INFORMATION The 2SC4342 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such as PWM


    Original     		PDF 2SC4342 2SC4342 O-126 D1486

    ic 8705

    Abstract: IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436A NPN SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436A is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436A PA1436A PA1436AH ic 8705 IC-8705 nec 8705 IC-3482 PA1436AH IEI-1209 UPA1436AH pa1436 transistor array high speed IEI-1213

    DARLINGTON MANUAL

    Abstract: pa1436ah uPA1436H pa1436 iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1436 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µPA1436 is NPN silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1436 PA1436 PA1436H DARLINGTON MANUAL pa1436ah uPA1436H iei-1209 DARLINGTON TRANSISTOR ARRAY MF-1134 npn darlington array IEI-1213 MEI-1202

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    pa1437

    Abstract: IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array
    Text: DATA SHEET SILICON TRANSISTOR ARRAY µPA1437 PNP SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSION The µ PA1437 is PNP silicon epitaxial Darlington (in millimeters) Power Transistor Array that built in 4 circuits designed


    Original     		PDF PA1437 PA1437 PA1437H IC-3516 pnp DARLINGTON TRANSISTOR ARRAY IEI-1209 pnp darlington array IEI-1213 MEI-1202 MF-1134 PA1437H power transistor array

    PT 4304 a transistor

    Abstract: 2SC3587 noise diode
    Text: DATA SHEET SILICON TRANSISTOR 2SC3587 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION The 2SC3587 is an NPN epitaxial transistor designed for low- PACKAGE DIMENSIONS in mm noise amplification at 0.5 to 6.0 GHz. This transistor has low-noise


    Original     		PDF 2SC3587 2SC3587 PT 4304 a transistor noise diode

    darlington transistor for audio power application

    Abstract: 2SA1714 2SC4342 C11531E
    Text: DATA SHEET SILICON TRANSISTOR 2SA1714 PNP SILICON EPITAXIAL POWER TRANSISTOR DARLINGTON CONNECTION FOR HIGH-SPEED SWITCHING The 2SA1714 is a high-speed darlington power transistor. This PACKAGE DRAWING (UNIT: mm) transistor is ideal for high-precision control such as PWM control for


    Original     		PDF 2SA1714 2SA1714 O-126 2SC4342 C11531E) darlington transistor for audio power application 2SC4342 C11531E

    Mitsubishi M54564

    Abstract: M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p
    Text: Transistor-Array series Wide products range help reduce applications sets size and weight Transistor-Array series Application Transistor Array is a semiconductor integrated circuit in which a minute input current enables a high current drive. Transistor Arrays are used in a wide


    Original     		PDF A/20V 16P2Z 16pin 225mil 05MIN. 20pin 300mil 20P2N 20P2E Mitsubishi M54564 M54534 M54571P m54667p M54585FP m54571 M54566FP 16P2N M54522P equivalent m54532p

    Untitled

    Abstract: No abstract text available
    Text: NSM11156DW6T1G Dual PNP Transistors General Purpose PNP Transistor and PNP Transistor with Monolithic Bias Network NSM11156DW6T1G contains a single PNP transistor and a monolithic bias network PNP transistor with two resistors; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM11156DW6T1G NSM11156DW6T1G SC-88/SOT-363 NSM11156DW6/D

    transistor sc59 marking

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Preliminary Data Sheet DTC114TE Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network 3 The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a


    Original     		PDF DTC114TE DTC114TE 416/SC transistor sc59 marking

    Untitled

    Abstract: No abstract text available
    Text: NSM46211DW6T1G Dual NPN Transistors General Purpose NPN Transistor and NPN Transistor with Monolithic Bias Network NSM46211DW6T1G contains a single NPN transistor with a single NPN bias resistor transistor with a monolithic bias network; a series base resistor and a base-emitter resistor. This device is designed to


    Original     		PDF NSM46211DW6T1G NSM46211DW6T1G SC-88/SOT-363 NSM46211DW6/D

    4 channel triac opto

    Abstract: transistor transistor AC Switch OPTO- DARLINGTON dual channel opto triac ac opto triac Photo Relays DIP SWITCH 10 PIN photo transistor zero voltage AC 8 PIN
    Text: Contents INDEX OPTO ISOLATORS Photo Transistor 4 & 6 pin DIP FET Couplers High Collector / Emitter Voltage 8 pin SOIC Photo Transistor In Line Packages (4,8,16 pin DIP) Dual Channel Photo Transistor Quad Channel Photo Transistor 4 Photo Transistor Detector


    OCR Scan     		PDF

    TPQ2222

    Abstract: TPQ6700 tpq2369 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ2907A TPQ6002
    Text: ALLEGRO MICROSYSTEMS INC , 33E 0504330 0005713 mmÊm• 4 SLGR 'T -m v z ^ QUAD TRANSISTOR ARRAYS S eries T P Q quad transistor arrays are general-purpose silicon transistor arrays consisting of four independent devices. All of these devices are furnished in a 14-pin dual in-line plastic


    OCR Scan     		PDF 14-pin TPQ2222 TPQ2222A TPQ2369 TPQ6427 TPQ3904 TPQA06 TPQA05 TPQ2907 TPQ2907A TPQ6700 2n2222 transistor pin b c e 2N3904 WPSA05 a1005-0a TPQ6002

    amplifier blw96

    Abstract: BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414
    Text: PHILIPS INTERNATIONAL LSE D C3 711DÛ5L QDbBMlE 33b BLW96 PHIN H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated high power industrial and m ilitary transmitting equipm ent in the h.f. and v.h.f. band. The transistor presents


    OCR Scan     		PDF BLW96 7110fl2b DDb3453 amplifier blw96 BLW96 HF power amplifier PR37 RESISTOR BLW96 philips blw96 PHILIPS 4312 amplifier PR37 RESISTOR pr37 PHILIPS capacitors 0.1 mf A03414

    Untitled

    Abstract: No abstract text available
    Text: .7*113237 0026=137 3 W Ê Fi I '33>~iS S C S - T H O M S O N [M û œ a J tm M M S S G S-TH0MS0N BUX 25 3GE D NPN SILICON TRANSISTOR • HIGH SPEED, HIGH VOLTAGE, HIGH POWER TRANSISTOR ■ SWITCHING AND AMPLIFIER TRANSISTOR ABSOLUTE MAXIMUM RATINGS Sym bol


    OCR Scan     		PDF T-33-15

    FT1551

    Abstract: FT2551 fujitsu ring emitter
    Text: FUJITSU MICROELECTRONICS 374=171=2 ODlbblD S S F I 1 I 31E D T - 33 January 1990 Edition 1.1 PRODUCT PROFILB= _ Fujrrsu FT1551 Silicon High Speed Power Transistor DESCRIPTION The FT1E51 Is a silicon NPN general purpose, medium power transistor fabricated w ith Fujitsu's unique Ring Em itter Transistor R ET technology. RE T devices ara


    OCR Scan     		PDF 37417fe2 -r-33 FT1551 FT1E51 FT2551, 85MHz T-33-09 FT2551 fujitsu ring emitter

    2sc 103 transistor

    Abstract: transistor BD 430
    Text: SSC » • Ô23SL.GS 0G0M3SS 5 « S I E G ^f’ 33^D>S NPN Silicon Planar Transistor BD 429 SIEMENS AKTIENGESELLSCHAF ¡C 04355 0 - BD 429 is an epitaxial NPN silicon planar transistor in a plastic package similar to TO 202. Together with its complementary transistor BD 430 it is particularly suitable for use in


    OCR Scan     		PDF Q62702-D1069 -T-33-OS fl23SbQS BD429 2sc 103 transistor transistor BD 430

    BLY90

    Abstract: Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D
    Text: PHILIPS INTERNATIONAL 41E ]> • 711002b 0 0 2 7 ^ A b «PHIN BLY90 T-33-13 V.H.F. POWER TRANSISTOR - N-P-N epitaxial planar transistor intended for use in class-A, 8 and C operated mobile, industrial and military transmitters witlr a supply voltage o f 12,5 V . The transistor is resistance stabilized. Every tran­


    OCR Scan     		PDF 711002b BLY90 T-33-13 7z67566 BLY90 Wf VQE 23 F WE VQE 23 E wf vqe 23 WF VQE 11 E WF VQE 23 E WE VQE 11 E IEC134 philips Trimmer 60 pf WF VQE 23 D

    BD 130 NPN transistor

    Abstract: transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330
    Text: 25C D • 623SbOS 000434b 4 « S I E G _ NPN Silicon Planar Transistor BD 329 -SIEMENS AKTIENGESELLSCHAF 25C 043^6 O-.7 ^ SI - 0 7 BO 329 is an epitaxial NPN silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 330 it is particularly


    OCR Scan     		PDF 00043Mb Q62702-D394 329/BD Q62702-D401 Q62902-B63 100ps 200jiS BD329 BD 130 NPN transistor transistor BD 329 transistor BD Q62702-D401 BD329 JH transistor Q62702-D394 Q62902-B63 QQQ4347 BD330