TRANSISTOR 3BT Search Results

TRANSISTOR 3BT Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 3BT Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
transistor 3bt Abstract: marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor BC856BW Text: Central BC856W SERIES BC857W SERIES TM Semiconductor Corp. SURFACE MOUNT SUPERminiTM PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface	Original	BC856W BC857W OT-323 BC857W 200Hz BC856AW BC857AW BC856BW transistor 3bt marking 3ft sot323 MARKING 3Ft SOT-23-6 marking 3ft 3BT MARKING BC857BW 3Ft transistor	PDF
transistor 3bt Abstract: marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor BC857BW BC856BW Text: BC856W SERIES BC857W SERIES SURFACE MOUNT PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BC856W and BC857W Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERminiTM surface mount package,	Original	BC856W BC857W OT-323 100MHz 200Hz BC856BW BC857BW BC856AW transistor 3bt marking 3ft sot323 transistor 3et transistor 3Ft 3Ft sot marking code 200a 3Ft transistor	PDF
Untitled Abstract: No abstract text available Text: Philips Semiconductors bbS3^31 DD315^I1 3bT WMAPX Product specification PNP 4 GHz wideband transistor BFQ54T N A PIER PHILIPS/DISCRETE b^E J> PINNING DESCRIPTION PNP transistor in a plastic SOT37 package. PIN 1 base It is primarily intended for use in MATV and microwave amplifiers	OCR Scan	DD315 BFQ54T BFQ34T. 0031ST4 BB339	PDF
BFQ34T Abstract: BFQ54T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor Text: Philips Semiconductors bbS3^3]i 0 0 3 1 5 ^ 1 3bT BBAPX Product specification PNP 4 GHz wideband transistor ^ ^ N DESCRIPTION A ME R BFQ54T P H IL IP S /D IS C R E T E b^E ]> PINNING PNP transistor in a plastic SOT37 package. PIN It is primarily intended for use in	OCR Scan	BFQ54T BFQ34T. D31SCÃ BFQ54T MBB339 BFQ34T philips MATV amplifiers 25c2570 Philips MBB MBB339 638 transistor	PDF
BLw76a Abstract: BLW76 BD433 74412 Text: N AMER PHILIPS/DISCRETE b*ìE » • hb53T31 D a E ^ b b 772 ■ APX tSLW 76 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB or class-B operated high power transm itters in the h.f. and v.h.f. bands. The transistor presents excellent performance as a linear am	OCR Scan	hb53T31 BLw76a BLW76 BD433 74412	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: TLP733,734 GaAs IRED a PHOTO-TRANSISTOR TLP733 OFFICE M ACHINE. HOUSEHOLD USE EQUIPM ENT. SOLID STATE R ELA Y. SWITCHING POW ER SUPPLY. The TOSHIBA TLP733 and TLP734 consist of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode in a	OCR Scan	TLP733 TLP733) TLP734 UL1577, E67349 BS415 BS7002 EN60950)	PDF
TT 2222 Abstract: No abstract text available Text: N AMER PHIL IPS/D ISCR ETE btiS3T31 DDSTOMS STb I IAPX B LV 45/12 b'lE D V.H.F. POW ER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz communications band. Features • multi-base structure and emitter-ballasting resistors fo r an optimum temperature profile	OCR Scan	btiS3T31 OT-119) BLV45/12 TT 2222	PDF
B5G1 Abstract: BSS138 Text: National May 1995 Semiconductor~ BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products	OCR Scan	BSS138 OT-23 B5G1 BSS138	PDF
Transistor 78 L 05 Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920	OCR Scan	2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919	PDF
transistor 3bt Abstract: No abstract text available Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit TO -92 Driver circuit • Built in bias Resistor (R,=10Kil, R2=47KR) • Com plement to KSR2006 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)	OCR Scan	KSR1006 10Kil, KSR2006 Clb4142 transistor 3bt	PDF
2N2919 Abstract: 2N2642 Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920	OCR Scan	2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919	PDF
Untitled Abstract: No abstract text available Text: SIEM ENS BCR 35PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor (Rj=10kiJ, F<2=47kQ) Tape loading orientation	OCR Scan	10kiJ, Q62702-C2495 OT-363	PDF
BCX71RG Abstract: BCW61RA BCW61RD BCW61 BCX71 BCW61R transistor marking bh ra BCW60 BCW61A BCW61B Text: ITT SEMICON] / INTERMETALL SOE » 4bfl2711 D002L00 714 BCW 61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF am plifier applications. H Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,	OCR Scan	BCW61, BCX71 D002L00 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71RG BCW61RA BCW61RD transistor marking bh ra BCW61A BCW61B	PDF

2N329A Abstract: 2N328A JAN MIL-S-18500 2N328A 2N329A JAN ic tba 507 a Text: MIL-S- 19500/ 110C li m i irr? SUPERSEDING MIL-6- 19500/ HOB 8 November 1965 MUJTARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES 2N328A AND 2N329A Thla specification Is mandatary for uac by all Departmenta and Agende» of the Department of Deiena«.	OCR Scan	MIL-6-19500/HOC MXL-6-19500/110B 2N328A 2N329A 2N328A) 2N329A) 2N329A 2N328A JAN MIL-S-18500 2N329A JAN ic tba 507 a	PDF
SmD TRANSISTOR 42T Abstract: smd 42t Text: SIEMENS BUZ 100 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Ultra low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vbs >D ffDS on Package Ordering Code BUZ100	OCR Scan	O-220 BUZ100 C67078-S1348-A2 6235bDS SmD TRANSISTOR 42T smd 42t	PDF
iw 1688 Abstract: 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331 Text: Philips Semiconductors 0 0 3 2 0 b ti 5^7 • APX Product specification NPN 9 GHz wideband transistor BFS540 N AUER PHILIPS/DISCRETE FEATURES b^E » 1 PIN CONFIGURATION PIN • High power gain DESCRIPTION Code: N4 • Low noise figure • High transition frequency	OCR Scan	GG350bfci BFS540 OT323 UBC870 OT323. collect-176 iw 1688 7812 philips 227 1112 2t6 551 BFR540 BFS540 UBC870 TRANSISTOR D 1765 738 transistor BF 697 Transistor MJE 5331	PDF
STT 3 SIEMENS Abstract: TRANSISTOR 2FE ScansUX7 C67078-A3209-A2 Text: SIEMENS BUZ 384 SIPMOS Power Transistor • N channel • Enhancement mode • FREDFET Type BUZ 384 Vds 500 V DS on 10.5 A 0.6 w Package Ordering Code TO-218AA C67078-A3209-A2 Maximum Ratings Parameter Symbol Drain source voltage ^DS V DGR Drain-gate voltage	OCR Scan	O-218AA C67078-A3209-A2 fl23SbOS 6235b05 STT 3 SIEMENS TRANSISTOR 2FE ScansUX7	PDF
BCW61RA Abstract: bcx71 bcx71rh BCX71C BCW60 Text: ITT seuicond/ intermetall SGE D 4bô2711 D002bGQ 714 BCW61, BCX71 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. i i” n is 1 ! 4H P- Especially suited for automatic insertion in thick- and thin-film circuits. The transistors BCW61 are subdivided into the groups A, B,	OCR Scan	BCW61, BCX71 BCW61 BCX71 BCW60 BCX70 BCW61R BCX71R. BCW61RA bcx71rh BCX71C	PDF
N1702 Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922 Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961	OCR Scan	2N34A 2N43A 2N44A 2N59A 2N59B 2N59C 2N60A 2N60B 2N60C 2N61A N1702 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922	PDF
Untitled Abstract: No abstract text available Text: 7 1 1 0 0 2 b O C I b ^m a Philips Sem iconductors 2T2 RHIN Product specification NPN 6 GHz wideband transistor FEATURES BFR93A PINNING PIN DESCRIPTION • High power gain • Low noise figure • Very low intermodulation distortion 1 base 2 emitter • PNP complement is the BFT93.	OCR Scan	BFR93A BFT93.	PDF
AN5296 Application of the CA3018 Integrated Abstract: TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY Text: HARRIS SEflICOND SECTOR blE D • 43DP271 004703S bSG H H A S CA3146, CA3183 33 H a r r i s S E M I C O N D U C T O R ■ W » W W High-Voltage Transistor Arrays March 1993 Features Description • Matched General Purpose Transistors • VBE Matched ±5mV Max	OCR Scan	43DP271 004703S CA3146, CA3183 CA3146A, CA3183A, CA3183* A3146A CA3146 AN5296 Application of the CA3018 Integrated TA618 ca3083 relay ts4 harris transistors transistor 102 CA3183 transistor 9-t TA6183 DARLINGTON TRANSISTOR ARRAY	PDF
C4023 Abstract: STP40N05 STP40N05FI GC286 Text: 7 cî2cî237 0 0 m 34bT T B 1? • S G T H SGS-THOMSON STP40N05 STP40N05FI üO T@ KS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP40N05 STP40N05FI ■ . ■ ■ . ■ ■ . V dss R öS on Id 50 V 50 V < 0.035 Q < 0.035 Q 40 A 23 A TYPICAL RDS(on) = 0.03 i l	OCR Scan	004b4bÂ STP40N05 STP40N05FI STP40N05 STP40N05FI D04Li47S STP40N05/FI C4023 GC286	PDF
Untitled Abstract: No abstract text available Text: r z Ä 7 S C S - T H O T # M S O N r a ig ^ lIU lC T ^ O iD iE l S T B 7 N A 4 0 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB7NA40 V dss RDS on Id 400 V < 1Q 6.5 A . . . . • . . . TYPICAL Ros(on) = 0.82 £2 ± 30V GATE TO SOURCE VOLTAGE RATING	OCR Scan	STB7NA40 O-262) O-263) O-263 O-262	PDF

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TRANSISTOR 3BT Search Results

TRANSISTOR 3BT Result Highlights (5)

TRANSISTOR 3BT Datasheets Context Search

transistor 3bt

transistor 3bt

Untitled

BFQ34T

BLw76a

RCA H 541

Untitled

TT 2222

B5G1

Transistor 78 L 05

transistor 3bt

2N2919

Untitled

BCX71RG

2N329A

SmD TRANSISTOR 42T

iw 1688

STT 3 SIEMENS

BCW61RA

N1702

Untitled

AN5296 Application of the CA3018 Integrated

C4023

Untitled