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    taa 723

    Abstract: A0-A10J-1 A10C A10EC
    Text: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss


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    KM44C4002A, KM44C4102A taa 723 A0-A10J-1 A10C A10EC PDF

    41C1000A

    Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7^4142 0005117 b KM41C1Q00A CMOS DRAM 1 M x 1 Bit Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC KM41C1000A- 7 • • • • • • • • • tcAC The Samsung KM41C1000A is a CMOS high speed


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    KM41C1Q KM41C1000A- KM41C1000A-10 130ns 150ns 180ns KM41C1000A 576x1 41C1000A KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 KM41C1000AJ PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    KM44V4000BS 16Mx4, 512Kx8) V4000B PDF

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG. S E M I C O N D U C T O R INC DE KS54AHCT 4 f í A KS74AHCT lc " T DE 1 7 ^ 4 1 4 5 DOObOS? b 8-Bit SeriaHn/Parallel-Öut Shift Registers FEATURES DESCRIPTION • • • • These áre high-speed 8-bit registers with AND-gated serial inputs and an asynchronous clear. Data is entered serially


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    KS54AHCT KS74AHCT 54/74AL 7Tb414S 14-Pin PDF

    741 IC data sheet

    Abstract: uA 741 IC data sheet
    Text: KM48V514DJ CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM48V514DJ 512Kx8 16Mx4, 512Kx8) 003573e] KM48V514DJ) 741 IC data sheet uA 741 IC data sheet PDF

    30Q04

    Abstract: 37-c4 48 pin video ic chroma 175 ic mmi av converter rgb KS0119 KS0122 DD3002 AC290
    Text: PR E LIM IN A R Y INFORM ATIO N KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video form at to digitized component video. Output data can be selected for CCIR 601 or square pixel


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    KS0122 KS0122 100-QFP-1420C 71b4142 30Q04 37-c4 48 pin video ic chroma 175 ic mmi av converter rgb KS0119 DD3002 AC290 PDF

    transistor 3bt

    Abstract: No abstract text available
    Text: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit TO -92 Driver circuit • Built in bias Resistor (R,=10Kil, R2=47KR) • Com plement to KSR2006 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    KSR1006 10Kil, KSR2006 Clb4142 transistor 3bt PDF

    Untitled

    Abstract: No abstract text available
    Text: SM P-13203 ELECTRONICS Sam sung M ic ro w a v e S e m ico n d u cto r S illC |lG B id S Low Noise A m plifer 1 .8 - 3 .0G H z Description Features The SMP-13203 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC) housed in a low-cost Small Outline Integrated Circuit


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    P-13203 SMP-13203 SMP-13203 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)


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    KM62256C 100ns 110mW KM62256CLGI/CLGI-L 28-SOP-450 KM62256CLTGI/CLTGI-L 28-TSOP1-CI813 KM62256CLRGI/CLRGI-L 28-TSOP1-Q813 KM62256CLI/CLI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte


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    V32000T 250us KM29V32000T) 003iA PDF

    IRFP240

    Abstract: IRF640 SAMSUNG
    Text: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re


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    IRF640/641 IRFP240/241/242/243 OG121TI O-220 IRF640/IRFP140 IRF641 IRFP241 F642/IRFP242 IRF643/IRFP243 IRF640/641/642/643 IRFP240 IRF640 SAMSUNG PDF

    UD322

    Abstract: H14E AA-322 D322B
    Text: KM416V256DT CMOS D RA M ELECTRONICS 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time


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    KM416V256DT 256Kx16 JU004 7Tb4142 UD322 H14E AA-322 D322B PDF

    Untitled

    Abstract: No abstract text available
    Text: KM44C1005D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal or Low power), and package type (SOJ


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    KM44C1005D 1024cycles PDF

    KM6164002j

    Abstract: KM6164002 ISE Electronics
    Text: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)


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    KM6164002 D0177BD KM6164002J-20: 240mA KM6164002J-25: 220mA KM6164002J-35: 200mA KM6164002J: 44-Pln KM6164002j KM6164002 ISE Electronics PDF

    Untitled

    Abstract: No abstract text available
    Text: KS57C0104 Microcontroller ELECTRONICS DESCRIPTION The KS57C0104/0108 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain I/O pins, the KS57C0104/0108


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    KS57C0104 KS57C0104/0108 KS57C0104/0108 16-bit KS57C0104) KS57C0108) ib4142 PDF