taa 723

Abstract: A0-A10J-1 A10C A10EC
Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss

41C1000A

Abstract: KM41C1000 KM41C1000A-10 KM41C1000AZ 41C1000 km41c1000a KM41C1000AJ
Contextual Info: SAMSUNG SEMICONDUCTOR INC S3E D • 7^4142 0005117 b KM41C1Q00A CMOS DRAM 1 M x 1 Bit Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: tRAC KM41C1000A- 7 • • • • • • • • • tcAC The Samsung KM41C1000A is a CMOS high speed

Contextual Info: KM44V4000BS CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle

Contextual Info: SAMSUNG. S E M I C O N D U C T O R INC DE KS54AHCT 4 f í A KS74AHCT lc " T DE 1 7 ^ 4 1 4 5 DOObOS? b 8-Bit SeriaHn/Parallel-Öut Shift Registers FEATURES DESCRIPTION • • • • These áre high-speed 8-bit registers with AND-gated serial inputs and an asynchronous clear. Data is entered serially

741 IC data sheet

Abstract: uA 741 IC data sheet
Contextual Info: KM48V514DJ CMOS DRAM ELECTRONICS 512K x 8 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 524,288 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

30Q04

Abstract: 37-c4 48 pin video ic chroma 175 ic mmi av converter rgb KS0119 KS0122 DD3002 AC290
Contextual Info: PR E LIM IN A R Y INFORM ATIO N KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video form at to digitized component video. Output data can be selected for CCIR 601 or square pixel

transistor 3bt

Contextual Info: KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching Circuit, Inverter, Interface circuit TO -92 Driver circuit • Built in bias Resistor (R,=10Kil, R2=47KR) • Com plement to KSR2006 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: SM P-13203 ELECTRONICS Sam sung M ic ro w a v e S e m ico n d u cto r S illC |lG B id S Low Noise A m plifer 1 .8 - 3 .0G H z Description Features The SMP-13203 is a high performance Gallium Arsenide GaAs Monolithic Microwave Integrated Circuit (MMIC) housed in a low-cost Small Outline Integrated Circuit

Contextual Info: KM62256C Ll/C LI - L CMOS SRAM 32,768 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range i -40 to 85°C • Fast Access Time : 70,100ns Max. • Low Power Dissipation Standby (CMOS) : 275,«W(Max.) Operating : 110mW(Max.)

Contextual Info: KM29 V32000T Flash ELECTRONICS 4M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Supply • Organization - Memory Cell Array : 4M +128K bit x 8bit - Data Register : (512 + 16)bitx8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte

IRFP240

Abstract: IRF640 SAMSUNG
Contextual Info: b4E D SAMSUNG ELECTRONICS INC • IRF640/641 /642/643 IRFP240/241/242/243 7 ^ 4 1 4 2 OG121TI ÖTS «SMfiK N-CHANNEL POWER MOSFETS FEATURES TO-220 • Low er R ds ON • Improved inductive ruggedness • • • • • F a s t sw itch in g tim e s R u g g ed p o lysilico n g a te ce ll s tru ctu re

UD322

Abstract: H14E AA-322 D322B
Contextual Info: KM416V256DT CMOS D RA M ELECTRONICS 2 5 6 K x 1 6 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 262,144 x 16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , access time

Contextual Info: KM44C1005D CMOS DRAM 1M x 4bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 1,048,576 x 4bit Extended Data Out Quad CAS CMOS DRAMs. Extended Data Out offers high speed random access of memory cells within the same row. Access time -5, -6 or -7 , power consumption(Normal or Low power), and package type (SOJ

KM6164002j

Abstract: KM6164002 ISE Electronics
Contextual Info: SAMSUNG ELECTRONICS INC b7E D • 7^4145 DD177BD ST7 PRELIMINARY KM6164002 spigk CMOS SRAM 262,144 WORD x 16 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 20, 25, 35ns Max. • Low Power Dissipation Standby (TTL) : 60mA (Max.)

Contextual Info: KS57C0104 Microcontroller ELECTRONICS DESCRIPTION The KS57C0104/0108 single-chip 4-bit microcontroller is fabricated using an advanced CMOS process. With two 8-bit timer/counters, an 8-bit serial I/O interface, and eight n-channel open-drain I/O pins, the KS57C0104/0108