TRANSISTOR 3E Search Results

TRANSISTOR 3E Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR 3E Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
free transistor and ic equivalent data Abstract: SMD CODE 3e transistor smd 3E TRANSISTOR SMD MARKING CODE oc smd transistor 3K marking 415 sot23 transistor smd marking NA sot-23 SMD CODE TRANSISTOR JA MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor	Original	CMBTH10 OT-23 C-120 CMBTH10Rev190402E free transistor and ic equivalent data SMD CODE 3e transistor smd 3E TRANSISTOR SMD MARKING CODE oc smd transistor 3K marking 415 sot23 transistor smd marking NA sot-23 SMD CODE TRANSISTOR JA MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23	PDF
ts 4141 TRANSISTOR smd Abstract: free transistor and ic equivalent data SMD TRANSISTOR MARKING ed CMBTH10 transistor SMD MARKING CODE MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 SMD transistor code JA TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7 Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E VHF/UHF Transistor	Original	CMBTH10 OT-23 C-120 CMBTH10Rev190402E ts 4141 TRANSISTOR smd free transistor and ic equivalent data SMD TRANSISTOR MARKING ed CMBTH10 transistor SMD MARKING CODE MARKING CODE SMD IC TRANSISTOR SMD CODE PACKAGE SOT23 SMD transistor code JA TRANSISTOR SMD MARKING CODE WT equivalent transistor smd 3 em 7	PDF
Untitled Abstract: No abstract text available Text: UTC MMBTH10 NPN EPITAXIAL SILICON TRANSISTOR RF TRANSISTOR DESCRIPTION The UTC MMBTH10 is desinged for using as VHF and UHF oscillators and VHF Mixer in a tuner of a TV receiver. 3 1 MARKING 2 3E SOT-23 1: EMITTER 2: COLLECTOR 3: BASE ABSOLUTE MAXIMUM RATINGS Ta=25°C	Original	MMBTH10 MMBTH10 OT-23 1000pF 8-10pF 100pF 0-18pF	PDF
BTC5181WC3 Abstract: No abstract text available Text: Spec. No. : C213WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 1/3 CYStech Electronics Corp. High Frequency NPN Epitaxial Planar Transistor BTC5181WC3 Description The BTC5181WC3 is a NPN Epitaxial Silicon Transistor designed for low noise microwave amplification	Original	C213WC3 BTC5181WC3 BTC5181WC3 OT-523 UL94V-0	PDF
c380 NPN transistor Abstract: c380 transistor DATASHEET OF BJT 547 transistor c380 kf 202 transistor BTC5096WC3 90E09 4538 equivalent Transistor 0235 BF K 4014 transistor Text: CYStech Electronics Corp. Spec. No. : C212WC3 Issued Date : 2003.08.15 Revised Date : Page No. : 1/8 High Cutoff Frequency NPN Epitaxial Planar Transistor BTC5096WC3 Description The BTC5096WC3 is a NPN Silicon Transistor designed for low noise amplifier at VHF, UHF and	Original	C212WC3 BTC5096WC3 BTC5096WC3 OT-523 UL94V-0 c380 NPN transistor c380 transistor DATASHEET OF BJT 547 transistor c380 kf 202 transistor 90E09 4538 equivalent Transistor 0235 BF K 4014 transistor	PDF
marking code 10 sot23 Abstract: PNP POWER TRANSISTOR SOT23 PBSS5130T free transistor equivalent book Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBSS5130T 30 V, 1 A PNP low VCEsat BISS transistor Product specification 2003 Dec 12 Philips Semiconductors Product specification 30 V, 1 A PNP low VCEsat (BISS) transistor PBSS5130T FEATURES QUICK REFERENCE DATA	Original	M3D088 PBSS5130T SCA75 R75/01/pp7 marking code 10 sot23 PNP POWER TRANSISTOR SOT23 PBSS5130T free transistor equivalent book	PDF
Untitled Abstract: No abstract text available Text: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage	Original	KST10 OT-23 KSP10 CuKST10MTF	PDF
KSP10 Abstract: kst10 silicon KST10 Text: KST10 KST10 VHF/UHF Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector Base Voltage Parameter Value 30 Units V VCEO VEBO Collector-Emitter Voltage	Original	KST10 OT-23 KSP10 kst10 silicon KST10	PDF
BC337 Abstract: BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25 Text: BC337 / BC338 NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 1Collector 2Base 3Emitter J	Original	BC337 BC338 BC337-16 BC337-25 BC337-40 BC338-16 BC338-25 BC338-40 Bas20V, 100mA BC337 NPN transistor BC338 OF TRANSISTOR BC337 transistor bc337 npn transistor BC338 NPN Transistor TO92 300ma BC337 hfe BC338-40 TRANSISTOR BC337-25	PDF
Untitled Abstract: No abstract text available Text: IS/ISO 9002 Lic# QSC/L-000019.3 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTOR CMBTH10 PIN CONFIGURATION NPN 1 = BASE 2 = EM ITTER 3 = COLLECTOR SOT-23 Formed SMD Package 3 1 2 Marking Code = 3E	Original	QSC/L-000019 CMBTH10 OT-23 C-120 CMBH10Rev190402E	PDF
Untitled Abstract: No abstract text available Text: CSA1162 LOW FREQUENCY GENERAL PURPOSE AMPLIFIER TRANSISTOR P-N-P transistor Marking CSA1162Y-3E CSA1162GR G -3F PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN m m 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 0.14 0.09 0.48 0.38 3 2.6 2.4 _1.02	OCR Scan	CSA1162 CSA1162Y-3E CSA1162GR	PDF
eRVDS Abstract: 2SK797 OS1012 Text: "t û DÊJb427S2S 6427525 N E C 0Dlflci4S ELECTRONICS fl 98D INC 18942 D T 3e N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK797 D E S C R IP TIO N The 2SK797 Is N-Channel MOS Field Effect Power Transistor PACKAGE DIMENSIONS designed for solenoid, motor and lamp driver.	OCR Scan	Jb457S5S 2SK797 eRVDS OS1012	PDF
fairchild micrologic Abstract: D9109 10-JK 9110 F 9109 Text: HIGH LEVEL LOGIC DIODE-TRANSISTOR MICROLOGIC. INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT O'C TO 75*C TEMPERATURE RANGE GENERAL DESCRIPTION— The Fairchild High Level Logic Diode-Transistor Micrologic® Integrated Circuit	OCR Scan	M3700 10--JK fairchild micrologic D9109 10-JK 9110 F 9109	PDF
Untitled Abstract: No abstract text available Text: SGS-THOMSON RfflD0lsi i[Liera®[i!lDS$ B U L138 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR . . . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION	OCR Scan	BUL138	PDF

BUV89 Abstract: No abstract text available Text: N AMER PHILIPS/DISCRETE b^E » bbSB'lBl DDBflMTO TBS BUV89 IAPX SILICON DIFFUSED POWER TRANSISTOR High-voltage, high-speed switching npn transistor in a plastic SOT93 envelope especially intended fo r use in AC m otor control systems from three-phase mains.	OCR Scan	BUV89 bb53T31 7Z88401 BUV89	PDF
s3331 Abstract: No abstract text available Text: Hi bbSBTBl 0031SSD flM7 M A P X Philips S em iconductors Product specification NPN 12 GHz wideband transistor BFQ33C N AMER PHILIPS/DISCRETE DESCRIPTION b^E T> PINNING NPN transistor in hermetically-sealed, sub-miniature, SOT173 and SOT 173X micro-stripline envelopes, primarily	OCR Scan	0031SSD BFQ33C OT173 s3331	PDF
BD807 Abstract: transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 BD805 adc 809 Text: MOT O RO LA SC XSTRS/R F 15E D \| t>3b?2S4 GGfl47bl 5 \| 7^/j MOTOROLA SEM ICONDUCTO R TECHNICAL DATA PLASTIC HIGH POWER SILICON NPN TRANSISTOR 10 AMPERE POWER TRANSISTOR . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.	OCR Scan	G0fi47til BD805 BD809 BD806 BD807 Temperatu03 AN-415) transistor 1127 PJ 0446 pj 809 ADC ic adc 809 pj 807 MOTOROLA transistor 413 ADC 808 adc 809	PDF
Untitled Abstract: No abstract text available Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .	OCR Scan	MAT-03 DAC-08, 992mA 992rnA, 008mA	PDF
2SD1630 Abstract: No abstract text available Text: SEC i l > h> y< '7— b =7 7 .9 Darlington Power Transistor 2SD1630 9 N P N l fc: JV W ii/ i; □ > h = 7 > i> i&mfcmtimm, 7 .9 { & & & * * ? * • > * & U L liiJB NPN ^ ',icon EP'taxial Darlington Transistor Audio Frequency Power Amplifier Low Speed Switching	OCR Scan	2SD1630 2sd1630ii, 2SD1630	PDF
transistor motorola 114-8 Abstract: MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8 Text: Order this data sheet by MRF861/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF861 NPN Silicon RF Power Transistor M otorola Preferred Device CLASS A 800-960 MHz 27 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier	OCR Scan	MRF861/D 2PHX33727Q-0 transistor motorola 114-8 MRF861 2n2222 npn transistor motorola s 114-8 2N2222 SOA power transistor 2n2222 motorola 114-8	PDF
transistor C 5386 Abstract: 24 5805 054 000 829 c 4468 power transistor Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5184 NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION FEATURES P A C K A G E D IM E N S IO N S • Low Noise • NF = 1.3 dB typ. @ Vce = 2 V, Ic = 3 mA, f = 2 GHz • NF = 1.3 dB	OCR Scan	2SC5184 SC-70 2SG5184-T1 2SC5184-T2 transistor C 5386 24 5805 054 000 829 c 4468 power transistor	PDF
Untitled Abstract: No abstract text available Text: ALL E GR O MICROSYSTEMS INC T3 D • 05D433Ô 00037SS PR O CESS NJ26 T ■ ALGR T -9 1 -0 1 Process NJ26 N-Channel Junction Field-Effect Transistor Process NJ26 is an N-channel junction field-effect transistor designed for general-purpose amplifier ap plications at frequencies of up to 450 MHz.	OCR Scan	05D433Ã 00037SS	PDF
820 572 711 Abstract: 2SC4321 Text: 2SC4321 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4321 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF = l.ldB, \|S2le\|2= 13dB f = 1GHz 2.1 ±0.1 1.25 ±0.1 oo + 1 3E- MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SC4321 SC-70 -j250 820 572 711 2SC4321	PDF
62702-F Abstract: No abstract text available Text: 3EE D • Ô23b 320 GGlfc^B? S « S I P 3 1 - 2,3 NPN Silicon RF Transistor SIEMENS/ SPCL-, SEMICONDS _ ^7P ' • For low-distortion broadband amplifiers up to 900 MHz at collector currents from 20 to 150 mA. Type Marking Ordering c o d e ^ tape and reel ^	OCR Scan	62702-F OT-89 23b320 BFQ17P	PDF

TRANSISTOR 3E Search Results

TRANSISTOR 3E Result Highlights (5)

TRANSISTOR 3E Datasheets Context Search

free transistor and ic equivalent data

ts 4141 TRANSISTOR smd

Untitled

BTC5181WC3

c380 NPN transistor

marking code 10 sot23

Untitled

KSP10

BC337

Untitled

Untitled

eRVDS

fairchild micrologic

Untitled

BUV89

s3331

BD807

Untitled

2SD1630

transistor motorola 114-8

transistor C 5386

Untitled

820 572 711

62702-F