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    TRANSISTOR 4003 Search Results

    TRANSISTOR 4003 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 4003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd optocoupler marking 1

    Abstract: smd optocoupler marking device 1 smd optocoupler marking smd optocoupler marking 6 optocoupler smd marking device 1 smd transistor marking p1 8 channel optocoupler high speed logic to logic optocoupler 09 smd transistor
    Text: SDN136 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features •       The SDN136 is a high speed optocoupler consisting of an infrared GaAs LED optically coupled through a high isolation barrier to an integrated high speed transistor and


    Original     		PDF SDN136 SDN136 5000VRMS) SDN136/H/S/TR smd optocoupler marking 1 smd optocoupler marking device 1 smd optocoupler marking smd optocoupler marking 6 optocoupler smd marking device 1 smd transistor marking p1 8 channel optocoupler high speed logic to logic optocoupler 09 smd transistor

    2012 SMD resistor

    Abstract: smd optocoupler marking 1 high speed solid state switch smd optocoupler marking device 1 smd optocoupler marking 6 high speed logic to logic optocoupler
    Text: SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features •       The SDN135 is a high speed optocoupler consisting of an infrared GaAs LED optically coupled through a high isolation barrier to an integrated high speed transistor and


    Original     		PDF SDN135 SDN135 5000VRMS) SDN135/H/S/TR 2012 SMD resistor smd optocoupler marking 1 high speed solid state switch smd optocoupler marking device 1 smd optocoupler marking 6 high speed logic to logic optocoupler

    Untitled

    Abstract: No abstract text available
    Text: SDN136 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features •       The SDN136 is a high speed optocoupler consisting of an infrared GaAs LED optically coupled through a high isolation barrier to an integrated high speed transistor and


    Original     		PDF SDN136 SDN136 SDN136/H/S/TR

    Untitled

    Abstract: No abstract text available
    Text: SDN135 Analog High Speed Optocoupler 1MBd, Photodiode with Transistor Output Description Features •       The SDN135 is a high speed optocoupler consisting of an infrared GaAs LED optically coupled through a high isolation barrier to an integrated high speed transistor and


    Original     		PDF SDN135 SDN135 SDN135/H/S/TR

    transistor l7805cv

    Abstract: in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV
    Text: Date: 4-May-07 PCB reference: STEVAL-IFS003V1 Date: March, 20 2006 Company: S Contact person: Nishant Omar E-mail: nishant.omar@st.com Phone:+91 0120 4003603 Reference 1 ST7 - MCU 1 NAND-Flash 1 Voltage Regulator 1 Real Time Clock 1 MOSFET 1 Diode 1 npn Transistor


    Original     		PDF 4-May-07 STEVAL-IFS003V1 ST7F651AR6T1 NAND512W3A L7805 M41T81S STB100NF IN4148 2STR1215 TQFP64 transistor l7805cv in4148 smd diode l7805cv transistor ots-16-03 8B TRANSISTOR SMD smd transistor A1 smd diode code A2 SMD BERG header 805 smd code capacitor datasheet L7805CV

    W4000

    Abstract: ASI10543 ASI4003 transistor 4003
    Text: ASI4003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 4,000 MHz


    Original     		PDF ASI4003 W4000 ASI10543 ASI4003 transistor 4003

    ASI4003

    Abstract: ASI10543 transistor 4003
    Text: ASI4003 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 4003 is Designed for General Purpose Class C Power Amplifier Applications up to 4200 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 5 dB min. at 3 W / 4,000 MHz


    Original     		PDF ASI4003 ASI4003 ASI10543 transistor 4003

    Untitled

    Abstract: No abstract text available
    Text: ELM99xxxxxC CMOS middle current voltage regulator •General description ELM99xxxxxC is CMOS middle current voltage regulator which consists of reference voltage source, error amplifier, low resistance output transistor, short-circuit protection circuit, thermal protection circuit, output


    Original     		PDF ELM99xxxxxC ELM99 30Top= ELM99xxx2xC ELM99xxx2xC ELM99xxx3xC ELM99xxx3xC

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    Untitled

    Abstract: No abstract text available
    Text: SAT1670 AC Input 80V Quad Photo-Transistor Optocoupler Description Features •       The SAT1670 consists of four phototransistors, each optically coupled to two light emitting diodes. Optical coupling between the input IR LEDs and output


    Original     		PDF SAT1670 SAT1670

    FPD7612P70

    Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz 11GHz) 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R

    210 optocoupler

    Abstract: 4 pin optocoupler
    Text: SDT600 DC Input 60V Photo-Transistor Optocoupler Description Features •        The SDT600 consists of a phototransistor optically coupled to a light emitting diode. Optical coupling between the input IR LED and output phototransistor allows for high


    Original     		PDF SDT600 SDT600 5000VRMS) SDT600/H/S/TR 210 optocoupler 4 pin optocoupler

    FPD750SOT343

    Abstract: 0402CS 3.5GHz BJT
    Text: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm


    Original     		PDF FPD750SOT343 FPD750SOT34 OT343 FPD750SOT343 mx750 1850MHz) 20dBm 37dBm 2002/95/EC) EB750SOT343-BE 0402CS 3.5GHz BJT

    Untitled

    Abstract: No abstract text available
    Text: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.


    Original     		PDF FPD7612P70 FPD7612P70 22dBm 85GHz 24GHz

    SAT400STR

    Abstract: No abstract text available
    Text: SAT400 AC Input 60V Photo-Transistor Optocoupler Description Features •        The SAT400 consists of a phototransistor optically coupled to two light emitting diodes. Optical coupling between the two input IR LEDs and output phototransistor allows for


    Original     		PDF SAT400 SAT400 5000VRMS) VDE/EN60747-5-2 SAT400/H/S/TR SAT400STR

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    2SK946

    Abstract: TC-4003 TC4003 transistor 4003 cd 4003 2SK9
    Text: DATA SHEET NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE 2SK946 DESCRIPTION The 2SK946 is N-channel MOS Field Effect Power Transistor designed for switching power supplies, DC-DC PACKAGE DIMENSIONS in m illim eters inches converters. FEATURES


    OCR Scan     		PDF 2SK946 2SK946 1987M TC-4003 TC4003 transistor 4003 cd 4003 2SK9

    K 4005 transistor

    Abstract: "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005 ps4009
    Text: NEC PHOTO INTERRUPTERS ELECTRON DEVICE p s 400 i , p s 4003, p s 4005,p s 4007, p s 4009 PHOTO INTERRUPTER NEPOC SERIES DESCRIPTION The PS4001, PS4003, PS4005, PS4007, PS4009 are photo coupled interrupter modules containing a GaAs light emitting diode and an NPN silicon darlington connected photo-transistor.


    OCR Scan     		PDF PS4001, PS4003, PS4005, PS4007, PS4009 CHARACTERIS492 K 4005 transistor "Photo Interrupter" PS4001 ir 4009 pa 4009 transistor 4003 K 4005

    Transistor 2SA 2SB 2SC 2SD

    Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
    Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle


    OCR Scan     		PDF

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643

    RCA-CA3127

    Abstract: rca 0190 transistor iY22 rca 0190 CA3127 6 "transistor arrays" ic currentmirror
    Text: G E SOLID STATE 01 3>e 1 3&7SQB1 Q014b43 T T ' 7 rLM 3 ‘'2S' IB _ W Arrays CA3127 High-Frequency N-P-N Transistor Array For Low -Pow er A pp lications at Frequencies up to 500 MHz


    OCR Scan     		PDF DQ14t43 CA3127 RCA-CA3127* CA3127 100-MHz RCA-CA3127 rca 0190 transistor iY22 rca 0190 6 "transistor arrays" ic currentmirror

    NDS9955

    Abstract: No abstract text available
    Text: Na t i o n a l May 1996 Sem iconductor" NDS9955 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9955 bSD1130 NDS9955