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    TRANSISTOR 42-10A 3 PIN Search Results

    TRANSISTOR 42-10A 3 PIN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 42-10A 3 PIN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RR2p-Ul

    Abstract: RR2P-U ac240v RR2P-U relay 240v 10a circuits RR3B-UL DC24V SR2P-05C 5V 1A DPDT RELAY rectification failure relay Idec rr2ba-u Y778
    Text: Relays & Sockets RR Switches & Pilot Lights RR Series Power Relays Key features: • SPDT through 3PDT, 10A contacts • Midget power type relays • Available in pin and blade terminal styles. • Options include an indicator, check button for test operations and side flange.


    Original     		PDF

    RR2P-U

    Abstract: RR3PA-UL RR3B-UL RR3B-UL DC24V RR3PA-UL Idec rr2ba-u SR3P-511 rectification failure relay relay 240v 7a relay 240v 10a circuits IDEC rr2p-u
    Text: Relays & Sockets RR Series Switches & Pilot Lights RR Series Power Relays SPDT through 4PDT, 10A contacts Midget power type relays • Available in pin and blade terminal styles. • Options include an indicator, check button for test operations and side flange.


    Original     		PDF 800-262-IDEC 888-317-IDEC RR2P-U RR3PA-UL RR3B-UL RR3B-UL DC24V RR3PA-UL Idec rr2ba-u SR3P-511 rectification failure relay relay 240v 7a relay 240v 10a circuits IDEC rr2p-u

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • P-channel Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    Untitled

    Abstract: No abstract text available
    Text: Complementary MOSFET ELM35603KA-S •General Description ■Features ELM35603KA-S uses advanced trench technology to provide excellent Rds on and low gate charge. N-channel • • • • Vds=40V Vds=-40V Id=10A Id=-7A Rds(on) < 22mΩ(Vgs=10V) Rds(on) < 33mΩ(Vgs=-10V)


    Original     		PDF ELM35603KA-S ELM35603KA-S P2204ND5G O-252-5 May-03-2006

    Untitled

    Abstract: No abstract text available
    Text: ACE1632B N-Channel Enhancement Mode Field Effect Transistor Description ACE1613B uses advanced trench technology to provide excellent RDS ON . This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power


    Original     		PDF ACE1632B ACE1613B

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM32408LA-S ELM32408LA-S P2804BDG O-252

    c 3421 transistor

    Abstract: 010-0041 IC350 power IGBT HTGB MSAGA11F120D
    Text: MSAGA11F120D WAFER LOT EVALUATION INTERNAL PROCESS SPECIFICATION IPS REV. 0, Approval _N/C_ QC LOT#:_ LOT DATE CODE:_ QUANTITY ISSUED:_ QUANTITY REQUIRED:_ SUMMARY MICROSEMI MSAGA11F120D data sheet REVISION:


    Original     		PDF MSAGA11F120D MSAGA11F120D discretes\msae\MSAFX10N100AS c 3421 transistor 010-0041 IC350 power IGBT HTGB

    MIL-PRF-39016

    Abstract: cecc 16101 HI-G RELAYS relay 5a dpdt transistor C 548 B MIL-PRF-28776 dpdt 2bcn RELAY SPDT b mgad
    Text: GENERAL INFORMATION SELECTOR CHART Contacts Series MA MA2 MCA MS MS2 1MA 1MA1 1MS 1MS1 MGA MGAE MGA2 MGS MGSE MGS2 I2K 2K 2K6600 Series Types MA MA-D MA-DD MA-T MS MS-D MS-DD MS-T 1MA 1MA-D 1MA-DD 1MA-T 1MS 1MS-D 1MS-DD 1MS-T Enclosure TO-5 TO-5 TO-5 TO-5


    Original     		PDF 2K6600 100GRID MIL-PRF-39016 cecc 16101 HI-G RELAYS relay 5a dpdt transistor C 548 B MIL-PRF-28776 dpdt 2bcn RELAY SPDT b mgad

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 Preliminary PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it


    Original     		PDF UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207-024

    RFHA1023

    Abstract: SEMICONDUCTOR J598
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation


    Original     		PDF RFHA1023 RFHA1023 DS110630 SEMICONDUCTOR J598

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR „ DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions


    Original     		PDF UP2855 UP2855 OT-223 UP2855L-AA3-R UP2855G-AA3-R QW-R207- QW-R207-024

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32408LA-S •General description ■Features ELM32408LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=10A Rds(on) < 28mΩ (Vgs=10V) Rds(on) < 42mΩ (Vgs=4.5V)


    Original     		PDF ELM32408LA-S ELM32408LA-S P2804BDG O-252

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM32409LA-S •General description ■Features ELM32409LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=-40V Id=-10A Rds(on) < 44mΩ (Vgs=-10V) Rds(on) < 68mΩ (Vgs=-4.5V)


    Original     		PDF ELM32409LA-S ELM32409LA-S P4404EDG O-252 JAN-17-2005

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UP2855 PNP SILICON TRANSISTOR PNP MEDIUM POWER LOW SATURATION TRANSISTOR  DESCRIPTION The UTC UP2855 is a transistor with low saturation voltage. It provides customers with very low on-state losses that makes it ideal for applications, such as driving and power management functions


    Original     		PDF UP2855 UP2855 UP2855L-AA3-R UP2855G-AA3-R OT-223 QW-R207-024

    c11cf

    Abstract: No abstract text available
    Text: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin Features     Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology   RF OUT VDQ Pin 2 GND BASE Supports Multiple Pulse


    Original     		PDF RFHA1023 RFHA10k DS120508 c11cf

    P5506BDG

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32400LA-S •General description ■Features ELM32400LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=60V Id=10A Rds(on) < 55mΩ (Vgs=10V) Rds(on) < 75mΩ (Vgs=4.5V)


    Original     		PDF ELM32400LA-S ELM32400LA-S P5506BDG O-252 AUG-19-2004 P5506BDG

    Untitled

    Abstract: No abstract text available
    Text: Single N-channel MOSFET ELM32418LA-S •General description ■Features ELM32418LA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • Vds=40V Id=20A Rds(on) < 15mΩ (Vgs=10V) Rds(on) < 27mΩ (Vgs=7V)


    Original     		PDF ELM32418LA-S ELM32418LA-S P1504BDG O-252 May-05-2006

    BTC 139

    Abstract: BTC1510T3
    Text: CYStech Electronics Corp. Spec. No. : C652T3 Issued Date : 2003.09.30 Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.


    Original     		PDF C652T3 BTC1510T3 BTC1510T3 O-126 R2120 UL94V-0 BTC 139

    C1510

    Abstract: transistor c1510 BTC1510T3
    Text: CYStech Electronics Corp. Spec. No. : C652T3 Issued Date : 2003.09.30 Revised Date :2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510T3 Description The BTC1510T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		PDF C652T3 BTC1510T3 BTC1510T3 O-126 R2120 UL94V-0 C1510 transistor c1510

    C1510

    Abstract: transistor c1510 BTC1510F3 TO-263CB
    Text: Spec. No. : C652F3 Issued Date : 2004.09.07 Revised Date :2006.06.02 Page No. : 1/4 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTC1510F3 Description The BTC1510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		PDF C652F3 BTC1510F3 BTC1510F3 O-263 R2120 UL94V-0 C1510 transistor c1510 TO-263CB

    C1510

    Abstract: ic 4047 datasheet BTC1510E3 transistor c1510 IC 4047
    Text: CYStech Electronics Corp. Spec. No. : C652E3 Issued Date : 2004.02.01 Revised Date : 2006.05.24 Page No. : 1/5 NPN Epitaxial Planar Transistor BTC1510E3 Description The BTC1510E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed


    Original     		PDF C652E3 BTC1510E3 BTC1510E3 O-220AB R2120 UL94V-0 C1510 ic 4047 datasheet transistor c1510 IC 4047

    Solar mppt circuit design

    Abstract: 1000W inverter circuit design 10A MPPT Charger circuit 10A MPPT Charger inverter 500w 1000w inverter circuit modified sine wave MPPT 12v battery 24v Solar panel solar panel 500w sine wave inverter 500w circuit 24V lead acid battery charger circuit
    Text: Modified Sine Wave DC-AC Inverter with MPPT Solar Charger ISI-500 series Features : High surge power up to 1000W Power ON-OFF switch Protections: Bat. low alarm / Bat. low shutdown / Over temp. / Output short / Input polarity reverse / Over load High frequecny design


    Original     		PDF ISI-500 100/115/120VAC 200/220/240VAC ISI-500-112 ISI-500-124 ISI-500-148 ISI-500-212 ISI-500-224 ISI-500-248 50ssignment Solar mppt circuit design 1000W inverter circuit design 10A MPPT Charger circuit 10A MPPT Charger inverter 500w 1000w inverter circuit modified sine wave MPPT 12v battery 24v Solar panel solar panel 500w sine wave inverter 500w circuit 24V lead acid battery charger circuit

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: ISO-9001 CERTIFIED BY DESC H-BRIDGE MOSFET POWER MODULE M .S .K E N N E D Y CO RP. 3004 315 699-9201 8 1 7 0 Thompson Road Cicero, N.Y. 13039 FEATURES: • • • • • Pin Compatible with M P M 3 00 4 P and N Channel MOSFETs for Ease of Drive Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    OCR Scan     		PDF ISO-9001 51343DD 0G0G472