Philips TdA3619
Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T
Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.
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D1414
Abstract: NP88N055DHE NP88N055EHE MP-25 NP88N055CHE pt 11400
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CHE,
NP88N055DHE,
NP88N055EHE
NP88N055CHE
O-262
O-220AB
NP88N055DHE
O-263
O-220AB)
D1414
NP88N055DHE
NP88N055EHE
MP-25
NP88N055CHE
pt 11400
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d1414
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CHE,
NP88N055DHE,
NP88N055EHE
NP88N055CHE
NP88N055DHE
NP88N055EHE
O-220AB
O-262
O-263
O-220AB)
d1414
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
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NP88N055CHE,
NP88N055DHE,
NP88N055EHE
NP88N055CHE
NP88N055DHE
O-220AB
O-262
O-263
O-220AB)
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D1414
Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE NP88N055KHE
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE,NP88N055DHE,NP88N055EHE,NP88N055KHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
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NP88N055CHE
NP88N055DHE
NP88N055EHE
NP88N055KHE
NP88N055CHE
O-263
MP-25ZJ)
O-262
NP88N055EHE
D1414
MP-25
NP88N055KHE
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88N055
Abstract: NEC 88n055 NP88N055MHE NP88N055NHE NP88N055MHE-S18-AY
Text: PRELIMINARY PRODUCT INFORMATION MOS FIELD EFFECT TRANSISTOR NP88N055MHE,NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications. ORDERING INFORMATION
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NP88N055MHE
NP88N055NHE
NP88N055MHE-S18-AY
O-220
MP-25K)
NP88N055NHE-S18-AY
O-262
MP-25SK)
O-220)
88N055
NEC 88n055
NP88N055NHE
NP88N055MHE-S18-AY
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D1414
Abstract: MP-25 NP88N055CHE NP88N055DHE NP88N055EHE
Text: PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055CHE, NP88N055DHE, NP88N055EHE SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION These products are N-channel MOS Field Effect Transistor designed for high current switching
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NP88N055CHE,
NP88N055DHE,
NP88N055EHE
O-262
O-220AB
NP88N055DHE
NP88N055CHE
O-263
D1414
MP-25
NP88N055CHE
NP88N055DHE
NP88N055EHE
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Transistor J182
Abstract: No abstract text available
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
250mA,
Transistor J182
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1030MHz-1090MHz
Abstract: capacitor 470uf/63v 1000uf 63V electrolytic capacitor description of capacitor 470uf 63v capacitor 1000uf 63v j182 1000uf capacitor 470uf 16V tantalum capacitor 1000uF electrolytic capacitors 47uf/63V
Text: 1011LD110A 110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET GENERAL DESCRIPTION The 1011LD110A is a COMMON SOURCE N-Channel enhancement mode lateral MOSFET capable of providing 110Wpk of RF power from 1030MHz to 1090 MHz. The device is nitride passivated and utilizes gold metallization to ensure highest
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1011LD110A
1011LD110A
110Wpk
1030MHz
20Network
250mA,
1030MHz-1090MHz
capacitor 470uf/63v
1000uf 63V electrolytic capacitor
description of capacitor 470uf 63v
capacitor 1000uf 63v
j182
1000uf capacitor
470uf 16V tantalum
capacitor 1000uF
electrolytic capacitors 47uf/63V
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D1414
Abstract: NEC 88n055 NP88N055KHE-E-1-AY NP88N055MHE 88N055 88n05 NP88N055NHE NP88N055DHE NP88N055EHE NP88N055EHE-E2-AY
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP88N055EHE, NP88N055KHE NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
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NP88N055EHE,
NP88N055KHE
NP88N055CHE,
NP88N055DHE,
NP88N055MHE,
NP88N055NHE
NP88N055EHE-E1-AY
NP88N055EHE-E2-AY
NP88N055KHE-E2-AY
NP88N055KHE-E1-AY
D1414
NEC 88n055
NP88N055KHE-E-1-AY
NP88N055MHE
88N055
88n05
NP88N055NHE
NP88N055DHE
NP88N055EHE
NP88N055EHE-E2-AY
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GaAs FET HEMT Chips
Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
Pow4888
GaAs FET HEMT Chips
FHX35
eudyna GaAs FET RF Transistor
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Untitled
Abstract: No abstract text available
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
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fujitsu hemt
Abstract: FHX35X rm 702 627
Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended
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FHX35X
12GHz
FHX35X
2-18GHz
Power4888
fujitsu hemt
rm 702 627
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d1507
Abstract: 2SK3479 2SK3479-S 2SK3479-Z 2SK3479-ZJ MP-25 MP-25Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3479 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3479 is N-channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3479 TO-220AB 2SK3479-S TO-262 2SK3479-ZJ TO-263 2SK3479-Z TO-220SMDNote
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2SK3479
2SK3479
O-220AB
2SK3479-S
O-262
2SK3479-ZJ
O-263
2SK3479-Z
O-220SMDNote
d1507
2SK3479-S
2SK3479-Z
2SK3479-ZJ
MP-25
MP-25Z
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VMP4
Abstract: siliconix vmp4 Transistor VMP4 DVD150T DV28120T DV2840 DV2880T dv2880 DV2810W DV2805W
Text: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5
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28Vdc
DV2805S
DV2805W
DV2805Z
DV2810S
DV2810W
DV2810Z
DV2820S
DV2820W
DV2820Z
VMP4
siliconix vmp4
Transistor VMP4
DVD150T
DV28120T
DV2840
DV2880T
dv2880
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DV28120T
Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Text: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E
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5b4250S
DV28120T
DV28120U
0-35V
DV28120
DV28120T
DV2820
DV28120
DV2805
DV28120U
ARCO 0.1 Z
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R713
Abstract: transistor 422 fet
Text: KSR2010 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R«l0kfl) • Complement to KSR1010 ABSOLUTE MAXIMUM RATINGS (TA=>25'C) C haracteristic
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KSR2010
KSR1010
R713
transistor 422 fet
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TRANSISTOR K 2191
Abstract: nec 2761
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE434S01
NE434S01
NE434S01-T1
NE434S01-T1B
IR30-00
TRANSISTOR K 2191
nec 2761
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NE334S01
Abstract: transistor C 2240 K 1358 fet transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
IR30-00
transistor C 2240
K 1358 fet transistor
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DV2840S
Abstract: 0Q004
Text: 5642205 M/A-COM P H I DV2840S INC ^ 85D 00450 SL422DS □G0045Q D 3 * - / '4 2 N-Channel Enhancement - Mode RF Power FETs 175 MHz 2 0 -3 5 V 40 W 10 dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package Type S FEATURES • 20:1 VSWR ■ No Thermal Runaway
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Junc28V
DV2840S
0Q004
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SJ 2252 CIRCUIT DIAGRAM
Abstract: itt zf 10 zener 22-16 R9 itt zf 12 zener TMP47C422U TMP47C422F TMP47C222U Zener diode ITT zf 2.7
Text: TO SH IB A TMP47C222/422 CMOS 4-Bit Microcontroller TM P47C222N, TMP47C422N TMP47C222F, TMP47C422F TMP47C222U, TMP47C422U The TMP47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating AD converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.
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TMP47C222/422
P47C222N,
TMP47C422N
TMP47C222F,
TMP47C422F
TMP47C222U,
TMP47C422U
TMP47C222/422
TLCS-470
TMP47C222N
SJ 2252 CIRCUIT DIAGRAM
itt zf 10 zener
22-16 R9
itt zf 12 zener
TMP47C422U
TMP47C222U
Zener diode ITT zf 2.7
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47c422
Abstract: TMP47C222N TMP47C422F TMP47C422N o0P07 op07 oscillator tLCS-470 TMP47C222F TMP47P422VF TMP47P422VN
Text: TOSHIBA TMP47C222/422 CMOS 4-BIT MICROCONTROLLER TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.
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P47C222/422
TMP47C222N,
TMP47C422N
TMP47C222F,
TMP47C422F
47C222/422
TLCS-470
TMP47C222N
SDIP42-P-600-1
TMP47P422VN
47c422
TMP47C422F
o0P07
op07 oscillator
TMP47C222F
TMP47P422VF
TMP47P422VN
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22-16 R9
Abstract: TMP47C422F
Text: TO SHIBA TMP47C222/422 CMOS 4-BIT MICROCONTROLLER TM P47C222N, TMP47C422N TM P47C222F, TM P47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.
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TMP47C222/422
P47C222N,
TMP47C422N
P47C222F,
P47C422F
47C222/422
TLCS-470
TMP47C222N
TMP47C222F
22-16 R9
TMP47C422F
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47C422N
Abstract: No abstract text available
Text: TOSHIBA TMP47C222/422 CM OS 4-BIT M ICROCO NTRO LLER TMP47C222N, TMP47C422N TMP47C222F, TMP47C422F The 47C222/422 are high speed and high performance 4-bit single chip micro computers, integrating A/D converter, pulse output, zero-cross detector and LCD driver based on the TLCS-470 series.
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TMP47C222/422
TMP47C222N,
TMP47C422N
TMP47C222F,
TMP47C422F
47C222/422
TLCS-470
TMP47C222N_
TMP47C222F
47C422N_
47C422N
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