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    FUJITSU FHX35X / 002
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    FHX35 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FHX35LG Eudyna Devices TRANS JFET 4V 4LG Original PDF
    FHX35LG Fujitsu Low Noise HEMT Original PDF
    FHX35LG Fujitsu FET, P Channel, ID 0.085 A Original PDF
    FHX35LG Unknown FET Data Book Scan PDF
    FHX35LG Unknown High Frequency Device Data Book (Japanese) Scan PDF
    FHX35LG002 Eudyna Devices TRANS JFET 6V 4LG Original PDF
    FHX35LG/002 Fujitsu Low Noise HEMT Original PDF
    FHX35LG/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
    FHX35LG-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
    FHX35LP Fujitsu Super Low Noise HEMT Original PDF
    FHX35X Fujitsu FET, P Channel, ID 0.085 A Original PDF
    FHX35X Fujitsu Low Noise HEMT Original PDF
    FHX35X Unknown FET Data Book Scan PDF
    FHX35X002 Eudyna Devices TRANS JFET 6V 4LG Original PDF
    FHX35X/002 Fujitsu Low Noise HEMT Original PDF
    FHX35X/002-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF
    FHX35X-E1 Fujitsu FET: P Channel: ID 0.085 A Original PDF

    FHX35 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz PDF

    fujitsu hemt

    Abstract: FHX35X rm 702 627
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz Power4888 fujitsu hemt rm 702 627 PDF

    low noise hemt

    Abstract: lg s12 WG 924 FHX35LG PT 4304 a transistor fujitsu hemt
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz FCSI0598M200 low noise hemt lg s12 WG 924 PT 4304 a transistor fujitsu hemt PDF

    FHX35LG

    Abstract: FHX35 FHX35LG/002 fujitsu hemt fujitsu gaas fet hemt low noise die
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 FCSI0598M200 FHX35LG FHX35 fujitsu hemt fujitsu gaas fet hemt low noise die PDF

    GaAs FET HEMT Chips

    Abstract: FHX35X high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 GaAs FET HEMT Chips high power FET transistor s-parameters transistor hemt fujitsu gaas fet fhx35x GaAs FETs FHX35 PDF

    GaAs FET HEMT Chips

    Abstract: FHX35 FHX35X eudyna GaAs FET RF Transistor
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz Pow4888 GaAs FET HEMT Chips FHX35 eudyna GaAs FET RF Transistor PDF

    low noise hemt

    Abstract: transistor hemt FHX35LG transistor HEMT GaS rf transistor 3742
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz low noise hemt transistor hemt transistor HEMT GaS rf transistor 3742 PDF

    FHX35LP

    Abstract: FHX35LG WG 924 FHX35
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz reliabili4888 FHX35LP WG 924 FHX35 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX35LG Super Low Noise HEMT FEATURES • Low Noise Figure: 1.2B Typ. @f=12GHz • High Associated Gain: 10.0dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG 12GHz FHX35LG 2-18GHz the88 PDF

    FHX35LP

    Abstract: FHX35LG fujitsu hemt
    Text: FHX35LG/LP Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Cost Effective Ceramic Microstrip (SMT) Package


    Original     		FHX35LG/LP 12GHz FHX35LG/LP 2-18GHz FCSI0598M200 FHX35LP FHX35LG fujitsu hemt PDF

    high frequency transistor ga as fet

    Abstract: GaAs FET HEMT Chips fujitsu hemt
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


    Original     		FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt PDF

    FHX35

    Abstract: eudyna FHX35LG hemt low noise die fujitsu gaas fet
    Text: FHX35X/002 FHX35LG/002 Low Noise HEMT DESCRIPTION The FHX35X/002 Chip and FHX35LG/002 packaged devices are HEMT High Electron Mobility Transistor ones suitable for use as the front end of an optical receiver in high speed lightwave communication systems.


    Original     		FHX35X/002 FHX35LG/002 FHX35X/002 FHX35LG/002 Co4888 FHX35 eudyna FHX35LG hemt low noise die fujitsu gaas fet PDF

    AuSn solder

    Abstract: fsx51x die-attach FSX51 AuSn
    Text: GaAs FET FHX35X/002 FSX51X/011 BONDING PROCEDURE FOR FET CHIPs Caution must be excercised to prevent static build up by proper grounding of all equipment and per­ sonnel. All operations must be performed in a clean, dust-free and dry environment. 1. Storage Condition: Store in a clean, dry nitrogen environment.


    OCR Scan     		FHX35X/002 FSX51X/011 FHX35X/002, FSX51X/011. AuSn solder fsx51x die-attach FSX51 AuSn PDF

    fujitsu gaas fet

    Abstract: S3V 03 S3V 05 FSX51 FHX35 fsx51x
    Text: LIGHTWAVE COM PON EN TS & M OD ULES GaAs FETs and HEMTs FOR RECEIVER FRONT ENDS 9m mS •g s o Cgs CGD (nA) (PF) (PF) Part Number Notes V d S=3V VDS=3V lDS=10mA V d S=3V lDS=20mA V q S=-2V FHX35 LG/002 60 (V d S=2V) 10 0.47 0.035 Packaged HEMT FHX35X/002


    OCR Scan     		FHX35 LG/002 FHX35X/002 FSX51 LG/001 FSX51X/011 fujitsu gaas fet S3V 03 S3V 05 fsx51x PDF

    fujitsu hemt

    Abstract: FHX35LG low noise hemt transistor LOW HEMT
    Text: FHX35X/002 FHX35LG/002 Low Noise H EM T FEATURES • • • • • High Transconductance Low Leakage Current Low Gate Capacitance Gold Bonding System Proven Reliability APPLICATIONS The front end of an optical receiver in high speed application. DESCRIPTION


    OCR Scan     		FHX35X/002 FHX35LG/002 FHX35LG/002 35LG/002 35X/0 HX35LGI002 fujitsu hemt FHX35LG low noise hemt transistor LOW HEMT PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX35X GaAs FET & HEMT Chips ELECTRICAL C H A R A C T E R ISE CS Ambient Temperature Ta=25° C Item Symbol Saturated Drain Current IDSS Test Conditions Min. Limit Typ. Max. Unit VDS =2V, V q s = OV 15 40 85 mA Transconductance 9m VDS = 2V, Id s = 10mA 40


    OCR Scan     		FHX35X -10fiA 12GHz 10pcs. FHX35X PDF

    FHX35LG

    Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
    Text: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability


    OCR Scan     		12GHz FHX35LG/LP 2-18GHz FHX35LG/LP FCSI0598M200 FHX35LG FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35 PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @ f=12G Hz High Associated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold G ate M etallization for High Reliability DESCRIPTION The FHX35X is a High Electron M obility Transistor(H EM T) intended


    OCR Scan     		FHX35X FHX35X 2-18G FCSI0598M200 PDF

    fhx35lg

    Abstract: No abstract text available
    Text: FHX35LG Low Noise H E M l ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 4.0 V Gate-Source Voltage vgs -4.0 V 290 mW Note Total Power Dissipation Ptot Storage Temperature Tstg -65 to +175


    OCR Scan     		FHX35LG 4000Q. fhx35lg PDF

    FLL105

    Abstract: FLL55 FLL300-1 FLL300-2 FLL101 fll171 FLL200-3 "FLL105" FLL-300-1 FLK202
    Text: SELECTION GRAPHS Output Power at 1dB Gain Compression dBm GaAs FETs CHIPS c o "co CO CD CL E o O ç aj CD m "D o $ o CL "3 Q. "3 O Frequency (GHz) Fufrsu Selection Graphs 1 1997 Microwave Databook SELECTION GRAPHS HEMTs 16 10 Associated Gain 12 (dB) 14 CÛ


    OCR Scan     		FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL300-3 FLU35 FLL55 FLL105 FLL101 fll171 "FLL105" FLL-300-1 FLK202 PDF

    KS D 9502

    Abstract: FMM381CG FMM360 fmm362 fsx51x
    Text: LIGHTWAVE CO M PO N E N TS & MODULES “CG” PACKAGE PIN DESCRIPTION FMM311CG # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 SYMBOL VSS DIN GND GND GND VSS T GND GND GND Mm k Mm k vss GND GND OUT GND V|B vss vss V|p vss vss VREF FUNCTION


    OCR Scan     		FMM311CG 068nF FMM381CG KS D 9502 FMM381CG FMM360 fmm362 fsx51x PDF

    FHX34X

    Abstract: FHX13x
    Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10


    OCR Scan     		FHX04X FHX06X FHX13X FHX14X FHX34X FHX35X FHX45X FHR02X FHR20X PDF

    FLC301XP

    Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
    Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips


    OCR Scan     		PDF

    FLC081XP

    Abstract: FLC253MH-6 FLC253MH-8 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA
    Text: - 132 - m % tí: € m & m s f =£ t * 1 H % K V tm * {S) a * i» (A) % S të ^ VGS* ñ * P d /P c h (W) Igs s ; (max) (A) Vos (V) m (min) (max) Vd s (A) (A) (V) te (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (A) Vd s (V) b (A) FHX05X X-Band LN A


    OCR Scan     		FHX05X FHX06FA/LG FHX06X FHX15FAAG FHX35LG 27dBin FLC253MH-8 FLC301MG-8 FLC311MG-4 FLK012WF FLC081XP FLC253MH-6 FLC091WF FLC053WG FLC103WG FLK022WG FLK012WF FLK052WG FHX15FA PDF