BFG135 amplifier
Abstract: BFG135 BFG135 - BFG135 MBB300
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor
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BFG135
OT223
CGY2020G
SCA50
647021/1200/01/pp12
BFG135 amplifier
BFG135
BFG135 - BFG135
MBB300
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
2SB1260L
2SB1260-AB3-R
2SB1260L-AB3-R
OT-89
QW-R208-017
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BFR540
Abstract: MSB003
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFR540 NPN 9 GHz wideband transistor Product specification Supersedes data of 1995 September 1999 Aug 23 Philips Semiconductors Product specification NPN 9 GHz wideband transistor FEATURES BFR540 The transistor is encapsulated in a
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BFR540
BFR540
125006/03/pp16
MSB003
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BFG35
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of 1995 Sep 12 1999 Aug 24 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor
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BFG35
OT223
MSB002
OT223.
125006/03/pp16
BFG35
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transistor 1012 TO252
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
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2SB1260
2SB1260
2SB1260L
2SB1260-x-AB3-R
2SB1260L-x-AB3-R
2SB1260-x-TN3-R
2SB1260L-x-TN3-R
2SB1260-x-TN3-T
2SB1260L-x-TN3-T
OT-89
transistor 1012 TO252
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nec 2741
Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SC4226-T1
nec 2741
2SC4226 datasheet
2SC4226-T1
2SC4226-T2
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BFQ34
Abstract: transistor marking N1 BFQ34/01,112
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFQ34 PINNING NPN transistor encapsulated in a 4
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BFQ34
OT122A
BFQ34/01
BFQ34/01
OT122
BFQ34
transistor marking N1
BFQ34/01,112
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BFG198
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a
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BFG198
OT223
MSB002
OT223.
CGY2020G
SCA50
647021/1200/01/pp12
BFG198
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TIP41C
Abstract: TIP42C TIP42CL TIP42C-TA3-T TIP42C-TN3-R TIP42C-TN3-T hFE is transistor to220
Text: UNISONIC TECHNOLOGIES CO., LTD TIP42C PNP PLANAR TRANSISTOR PNP EPITAXIAL PLANAR TRANSISTOR 1 DESCRIPTION TO-220 The UTC TIP42C is a PNP epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES 1 TO - 252
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TIP42C
O-220
TIP42C
TIP41C
TIP42CL
TIP42C-TA3-T
TIP42CL-TA3-T
TIP42C-TN3-R
TIP42CL-TN3-R
TIP42C-TN3-T
TIP41C
TIP42CL
TIP42C-TA3-T
TIP42C-TN3-R
TIP42C-TN3-T
hFE is transistor to220
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
O-252
2SB1260L
2SB1260-x-AB3-F-R
2SB1260L-x-AB3-F-R
2SB1260-x-TN3-F-R
2SB1260L-x-TN3-F-R
2SB1260-x-TN3-F-T
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2SB1132G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC/IB= -500mA/-50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA/-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
2SB1132L-x-TN3-T
2SB1132G-x-TN3-T
OT-89
2SB1132G
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BUJ103AX
Abstract: BP317 BU1706AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ103AX
SCA60
135104/240/02/pp12
BUJ103AX
BP317
BU1706AX
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BP317
Abstract: BU1706AX BUJ204AX
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204AX Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204AX GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
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BUJ204AX
SCA60
135104/204/02/pp12
BP317
BU1706AX
BUJ204AX
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132G-x-AB3-R
OT-89
2SB1132G-x-AL3-R
OT-323
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
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BUJ204A
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BUJ204A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ204A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in a TO220AB envelope intended for
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BUJ204A
O220AB
SCA60
135104/240/02/pp12
BUJ204A
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2SB1260
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.
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2SB1260
2SB1260
OT-89
O-252
2SB1260L
2SB1260-x-AB3-R
2SB1260L-x-AB3-R
2SB1260-x-TN3-R
2SB1260L-x-TN3-R
2SB1260-x-TN3-T
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TIP41CL
Abstract: TIP41CL-TA3-T f tip42c TIP41C tip41c pins TIP42C
Text: UNISONIC TECHNOLOGIES CO., LTD TIP41C NPN PLANAR TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP41C is a NPN expitaxial planar transistor, designed for using in general purpose amplifier and switching applications. 1 TO-220 FEATURE * Complement to TIP42C
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TIP41C
TIP41C
O-220
TIP42C
TIP41CL
TIP41C-TA3-T
TIP41CL-TA3-T
TIP41CL
TIP41CL-TA3-T
f tip42c
tip41c pins
TIP42C
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1132 PNP SILICON TRANSISTOR MEDIUM POWER TRANSISTOR DESCRIPTION The UTC 2SB1132 is a epitaxial planar type PNP silicon transistor. FEATURES * Low VCE SAT . VCE(SAT) = -0.2V(Typ.) (IC / IB= -500mA / -50mA) ORDERING INFORMATION
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2SB1132
2SB1132
-500mA
-50mA)
2SB1132L-x-AB3-R
2SB1132G-x-AB3-R
2SB1132L-x-TN3-R
2SB1132G-x-TN3-R
OT-89
O-252
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str 6707
Abstract: philips 23 2108 npn transistor ic str 6707 TO-202 transistor NPN BF859 BP317 D-20097 transistor d 2333 philips ltd 202
Text: DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D067 BF859 NPN high-voltage transistor Product specification Supersedes data of 1996 Dec 09 1999 Apr 14 Philips Semiconductors Product specification NPN high-voltage transistor BF859 DESCRIPTION NPN transistor in a TO-202 plastic package.
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M3D067
BF859
O-202
MBH794
O-202)
SCA63
115002/00/03/pp8
str 6707
philips 23
2108 npn transistor
ic str 6707
TO-202 transistor NPN
BF859
BP317
D-20097
transistor d 2333
philips ltd 202
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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NEC IC D 553 C
Abstract: nec 2741 702 mini transistor
Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.
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2SC4226
2SC4226
SC-70
2SG4226-T1
NEC IC D 553 C
nec 2741
702 mini transistor
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R T O BH TRANSISTOR
Abstract: 2SC5168 transistor CR NPN
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC5168 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC5168 is a silicon NPN epitaxial type transistor. It is designed for low noise deferential amplify application.
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2SC5168
2SC5168
100mV
250to800
270Hz
X10-3
R T O BH TRANSISTOR
transistor CR NPN
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2SA1927
Abstract: 05SV ra-100
Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2 S A 1 9 2 7 DUAL TRANSISTOR FOR LOW NOISE DIFFERENTIAL AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SA1927 is a silicon PNP epitaxial type transistor. It is designed for OUTLINE DRAWING
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2SA1927
2SA1927
100mVtyp
270Hz
X10-3
05SV
ra-100
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