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    TRANSISTOR 556 Search Results

    TRANSISTOR 556 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 556 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2X MARKING CODE SOT23

    Abstract: 2n4401 052
    Text: MMBT4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT4403 is recommended. • This transistor is also available in the TO-92 case


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    PDF MMBT4401 MMBT4403 2N4401. OT-23 MMBT4401 MMBT4401-GS18 MMBT4401-GS08 D-74025 19-May-04 2X MARKING CODE SOT23 2n4401 052

    transistor 18971

    Abstract: MMBT4401G TRANSISTOR marking code vishay MMBT4401-GS18
    Text: MMBT4401 VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the PNP transistor MMBT4403 is recommended. • This transistor is also available in the TO-92 case


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    PDF MMBT4401 MMBT4403 2N4401. OT-23 MMBT4401 MMBT4401-GS18 MMBT4401-GS08 D-74025 24-May-04 transistor 18971 MMBT4401G TRANSISTOR marking code vishay

    2T marking

    Abstract: No abstract text available
    Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


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    PDF MMBT4403 MMBT4401 2N4403. OT-23 MMBT4403 MMBT4403-GS18 MMBT4403-GS08 D-74025 24-May-04 2T marking

    2T marking

    Abstract: No abstract text available
    Text: MMBT4403 VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • As complementary type, the NPN transistor MMBT4401 is recommended. • This transistor is also available in the TO-92 case


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    PDF MMBT4403 MMBT4401 2N4403. OT-23 MMBT4403 MMBT4403-GS18 MMBT4403-GS08 D-74025 24-May-04 2T marking

    Transistor 03 smd

    Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


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    PDF MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03

    1P marking

    Abstract: No abstract text available
    Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.


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    PDF MMBT2222A MPS2222A. OT-23 MMBT2222A MMBT2222A-GS18 MMBT2222A-GS08 D-74025 31-Aug-04 1P marking

    Untitled

    Abstract: No abstract text available
    Text: MMBT2222A VISHAY Vishay Semiconductors Small Signal Transistor NPN Features • NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2222A.


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    PDF MMBT2222A MPS2222A. OT-23 MMBT2222A MMBT2222A-GS18 MMBT2222A-GS08 D-74025 12-Dec-03

    MARKING SMD PNP TRANSISTOR 2a

    Abstract: smd transistor NF TRANSISTOR SMD fr MARKING SMD PNP TRANSISTOR FR MARKING 25 SMD PNP TRANSISTOR smd transistor 2a smd 2a transistor transistor SMD 24 transistor SMD 104 NF marking TRANSISTOR SMD
    Text: SMD General Purpose Transistor PNP MMBT3906 SMD General Purpose Transistor (PNP) Features • PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


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    PDF MMBT3906 OT-23 OT-23, MIL-STD-202G, Amb61) MARKING SMD PNP TRANSISTOR 2a smd transistor NF TRANSISTOR SMD fr MARKING SMD PNP TRANSISTOR FR MARKING 25 SMD PNP TRANSISTOR smd transistor 2a smd 2a transistor transistor SMD 24 transistor SMD 104 NF marking TRANSISTOR SMD

    nec 2741

    Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SC4226-T1 nec 2741 2SC4226 datasheet 2SC4226-T1 2SC4226-T2

    *2F MARKING

    Abstract: No abstract text available
    Text: MMBT2907A VISHAY Vishay Semiconductors Small Signal Transistor PNP Features C 3 2 • PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. • This transistor is also available in the TO-92 case with the type designation MPS2907A.


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    PDF MMBT2907A MPS2907A. OT-23 MMBT2907A MMBT2907A-GS18 MMBT2907A-GS08 D-74025 31-Aug-04 *2F MARKING

    2n2222a transistor

    Abstract: 2N2222ADCSM dual npn 500ma 2N2222A surface mount 2N2222A LE17 013 transistor
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


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    PDF 2N2222ADCSM 2N2222A 500mW MO-041BB) 2n2222a transistor 2N2222ADCSM dual npn 500ma 2N2222A surface mount LE17 013 transistor

    Untitled

    Abstract: No abstract text available
    Text: SILICON SWITCHING NPN TRANSISTOR 2N2222ADCSM • Dual High Speed, Medium Power Saturated Switching Transistor • Hermetic Surface Mount Ceramic Package • Dual NPN version of the 2N2222A Transistor • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated . Per Device


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    PDF 2N2222ADCSM 2N2222A 500mW 86mW/Â MO-041BB)

    2SC4571

    Abstract: 2SC4571-T1 2SC4571-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T1 2SC4571-T2

    MJE13009d

    Abstract: 1A 300V TRANSISTOR MJE13009-D
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009D NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR „ DESCRIPTION The UTC MJE13009D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability.


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    PDF MJE13009D MJE13009D QW-R203-041 1A 300V TRANSISTOR MJE13009-D

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


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    PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SB1556 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 2SB1 556 O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V q e q = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO


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    PDF 2SB1556 --140V 2SD2385

    NEC IC D 553 C

    Abstract: nec 2741 702 mini transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.


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    PDF 2SC4226 2SC4226 SC-70 2SG4226-T1 NEC IC D 553 C nec 2741 702 mini transistor

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA 2SB1556 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR High Breakdown Voltage : V@EO - _ 140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Tc = 25°C) SYMBOL VCBO VCEO


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    PDF 2SB1556 2SD2385 2SB1556 2-21F1A 2SD2385

    2SB1556

    Abstract: 2-21F1A 2SD2385
    Text: TO SH IBA TOSHIBA TRANSISTOR 2SB1556 2 S B 1 556 SILICON PNP EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR O POWER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : V^EO = —140V (Min.) Complementary to 2SD2385 MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


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    PDF 2SB1556 --140V 2SD2385 2SB1556 2-21F1A

    2sb504

    Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
    Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle


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    ZO 107 MA

    Abstract: 341S
    Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low


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    PDF 2SC5009 2SC5009 ZO 107 MA 341S

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1 2SC4571-T2

    2sc4571

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4571 is a low supply voltage transistor designed for UHF Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4571 2SC4571 SC-70) 2SC4571-T1

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4570 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2.1 ±0.1 It is suitable for a high density surface mount assembly since the


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    PDF 2SC4570 2SC4570 SC-70) 4570-T PACK878