Untitled
Abstract: No abstract text available
Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN4989FE
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LDTA143EWT1G
Abstract: transistor 6j PNP marking 6J
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTA143EWT1G zApplications Inverter, Interface, Driver 3 zFeatures 1 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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LDTA143EWT1G
LDTA143EWT1G
transistor 6j
PNP marking 6J
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Untitled
Abstract: No abstract text available
Text: 2SA1182LT1 TRANSISTOR NPN Features Power dissipation 。 P C M : 0.3 W (Tamb=25 C) Pluse Drain I CM : -0.5 mA Reverse Voltage V (BR)CBO : -40V Operating and storage junction temperature range 。 。 T j , T stg : -55 C to +150 C SOT-23 3 1 2 1. 1.BASE 2.EMITTER
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2SA1182LT1
OT-23
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RN4989FE
Abstract: No abstract text available
Text: RN4989FE TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications. • Two devices are incorporated into an Extreme-Super-Mini (6 pin)
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RN4989FE
000707EAA1
RN4989FE
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Untitled
Abstract: No abstract text available
Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN4989FE
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RN4989FE
Abstract: No abstract text available
Text: RN4989FE TOSHIBA Transistor Silicon NPN • PNP Epitaxial Type PCT Process (Bias Resistor Built-in Transistor) RN4989FE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (6-pin)
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RN4989FE
RN4989FE
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DTA114TET1
Abstract: DTA115EET1
Text: DTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor
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DTA114EET1
SC-75/SOT-416
DTA114TET1
DTA115EET1
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LDTA143EET1 3 This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT Bias Resistor
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LDTA143EET1
SC-89
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Untitled
Abstract: No abstract text available
Text: MUN2132, MMUN2132L, MUN5132, DTA143EE, DTA143EM3, NSBA143EF3 Digital Transistors BRT R1 = 4.7 kW, R2 = 4.7 kW http://onsemi.com PNP Transistors with Monolithic Bias Resistor Network PIN CONNECTIONS This series of digital transistors is designed to replace a single
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MUN2132,
MMUN2132L,
MUN5132,
DTA143EE,
DTA143EM3,
NSBA143EF3
DTA143E/D
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transistor 6J U
Abstract: No abstract text available
Text: TEXAS INSTR -CL IN/INTFO SS Ô961724 TE XAS De J DG3MSbt 5 | ~ IN STRCLÏN /ÎN TFcf 55C 3 4 56ó T -58-11-23 LINEAR INTEGRATED CIRCUITS TYPES RM4193, RC4193 MICROPOWER SWITCHING REGULATOR D 27 18, SEP T EM B ER 1983 High Efficiency . . . 8 0 % T yp R M 4 1 9 3 . . J G
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RC4193
RM4193,
RC4193
transistor 6J U
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Untitled
Abstract: No abstract text available
Text: W hat HEW LETT mL'nM P a c k a rd Avantek Products Thin-Film Cascadable Amplifier 5 to 500 MHz Technical Data UTO/UTC 511 Series Features Description Pin Configuration • Frequency Range: 5 to 500 MHz • Low Noise: 2.3 dB Typ The 511 Series is an efficient
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44475A4
001DbT3
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2n5882 motorola
Abstract: 2NS882
Text: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —
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2M5882/D
2N5882/D
2n5882 motorola
2NS882
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powertech
Abstract: No abstract text available
Text: BIG IDEAS IN BIG POWER ” H p i PowerTecn • 500 A M P E R E S PT- 9 5 0 1 P T -9 5 Q 2 SILICON IMPIM TRANSISTOR FEATURES: v C E s a t . 0 .5V @ 300A h p g . V B E . 1.5V @ 3 0 0 A
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PB-500
18WIRE
powertech
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pa80c
Abstract: nec mpa80c MPA80C UPA80C J2268 mpa-80 UPA80C equivalent
Text: % TC TRANSISTOR ARRAY ELECTRON D EV IC E /¿PA80C FLUORESCENT INDICATOR PANEL DRIVER PNP-NPN SILICO N EPITAXIAL TRAN SISTO R ARRAY DESCRIPTION The ;uPA80C is a monolithic array of seven PNP-NPN structured transistors. This device is especially suited for driving FIP Fluorescent Indicator Panel .
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uPA80C
uPA80C
-50-l|
juPA80C
pa80c
nec mpa80c
MPA80C
J2268
mpa-80
UPA80C equivalent
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IRF74
Abstract: IRF742 IRF743
Text: [F@Mm°[M © IFHF IRF742.743 8 AMPERES 400, 350 VOLTS R|DS ON = 0.80 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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IRF742
TC-25
IRF74.
IRF742-Ã
IRF74
IRF743
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2sc995
Abstract: Toshiba 2SC995 2SC996 rb1a MA522 Produced by Perfect Crystal Device Technology
Text: 2 s c 995 I 2/ U L 2 s c 996 D > N P N E M Ì s il ic o n n p n t r ip l e * 7 - - r ^ ^ÿkmtatim o Color TV V ideo Output A p p l ications I B E T t , • ^ l' ? fi ; K 5 > ì; ^ 5 7 P C T 7d ì W U n i t i n mm o • 5Ì Ì^ DIFFUSED TRANSISTOR (PCT PROCESS
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2sc995
2sc996
100MHz
2SC995
Toshiba 2SC995
2SC996
rb1a
MA522
Produced by Perfect Crystal Device Technology
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mosfet BF964
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE DbE D fc.b53131 0012156 b • u I _ a BF964: _: T-3 I-2 S' SILICON N-CHANNEL DUAL GATE MOS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended for v.h.f. applications in television tuners, especially in r.f. stages and mixer stages in S-channel
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b53131
BF964:
mosfet BF964
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litton
Abstract: Litton Solid State transistor 2501 D2501 Litton Systems 250-1 MAG D-2501 RF FET TRANSISTOR 3 GHZ VDS35 55M4S
Text: J— X ' V il X 1 H J / / L 1 I LITTON IND/LITTON SOLI] Litton Electron Devices SbE D m 55ML42GD □□ODSDb 55T • L I T T Low Noise/Medium Power Microwave GaAs FET D-2501 Preliminary Specifications FEATURES ■ Noise Figure 2.2 dB @ 8 ghz ■ Gain at NF 9.0dB @ 8 g h z
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SSM42GD
D-2501
I--190-
D-2501
2285C
litton
Litton Solid State
transistor 2501
D2501
Litton Systems
250-1 MAG
RF FET TRANSISTOR 3 GHZ
VDS35
55M4S
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001D731
Abstract: No abstract text available
Text: What HEW LETT 1"KM PACKARD Avantek Products Thin-Film Cascadable Amplifier 10 to 500 MHz Technical Data UTO/UTC 526 Series Features Description Pin Configuration • Frequency Range: 10 to 500 MHz • High Gain: 28.0 dB Typ The 526 Series is a high-power,
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44475A4
001D731
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Untitled
Abstract: No abstract text available
Text: TO SHIBA RN4989 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS SILICON PNP EPITAXIAL TYPE (PCT PROCESS) RN4989 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT Unit in mm AND DRIVER CIRCUIT APPLICATIONS 2.1 ±0.1 • Including Two Devices in US6 (Ultra Super Mini Type
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RN4989
47kil
22kfl
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2SK2145
Abstract: No abstract text available
Text: TOSHIBA 2SK2145 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2 S K 2 1 45 Unit in mm AUDIO FREQUENCY LO W NOISE AM PLIFIER APPLICATIONS. • . • • + 0.2 Including Two Devices in SM5 Super Mini Type with 5 Leads. High |Yfs| : |Yfs| = 15mS (Typ.) at VDS = 10V, VGS = 0
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2SK2145
--50V
--30V
2SK2145
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L129
Abstract: No abstract text available
Text: MPF102 SILICO N Silicon N-channel junction field-effect transistor designed for VHF amplifier and m ixer applications. M A X IM U M R A T IN G S l*A = 2 S * C unlM S o t h e r « * ! n o t« i> Symbol Value Unit Draln-Source Voltage VDS 25 Vdc Draln-Gate Voltage
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NDS356AP
Abstract: No abstract text available
Text: Ju ly 1996 N ational Semiconductor ’ NDS356AP P-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral D escription Features These P -Channel logic level enhancement mode power field effect transistors are produced using Nationals, proprietary, high cell density, DMOS
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NDS356AP
b501130
0Q3CI754
NDS356AP
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2N4300
Abstract: No abstract text available
Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc
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2N4300
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