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    TRANSISTOR 7150 Search Results

    TRANSISTOR 7150 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 7150 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SC4107

    Abstract: ITR06315 ITR06316 ITR06313 ITR06314
    Text: Ordering number:ENN2472A NPN Triple Diffused Planar Silicon Transistor 2SC4107 400V/10A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching . · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2472A 2SC4107 00V/10A 2010C 2SC4107] O-220AB 2SC4107 ITR06315 ITR06316 ITR06313 ITR06314

    2SC4125

    Abstract: ITR06381 ITR06382 ITR06383 ITR06384 ITR06385 transistor 2SC4125
    Text: Ordering number:ENN2954 NPN Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .


    Original     		PDF ENN2954 2SC4125 100ns 2039D 2SC4125] 2SC4125 ITR06381 ITR06382 ITR06383 ITR06384 ITR06385 transistor 2SC4125

    2SC4125

    Abstract: No abstract text available
    Text: Ordering number:ENN2954 NPN Triple Diffused Planar Silicon Transistor 2SC4125 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .


    Original     		PDF ENN2954 2SC4125 100ns 2039D 2SC4125] 2SC4125

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .


    Original     		PDF ENN2962 2SC4124 100ns 2039D 2SC4124]

    2SC4108

    Abstract: ITR06322 ITR06323 ITR06324 ITR06325 ITR06326
    Text: Ordering number:ENN2473A NPN Triple Diffused Planar Silicon Transistor 2SC4108 400V/12A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2473A 2SC4108 00V/12A 2SC4108] 2SC4108 ITR06322 ITR06323 ITR06324 ITR06325 ITR06326

    2SC4124

    Abstract: ITR06371 ITR06372 ITR06373 ITR06374 ITR06375
    Text: Ordering number:ENN2962 NPN Triple Diffused Planar Silicon Transistor 2SC4124 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • Adoption of MBIT process. · On-chip damper diode. · High breakdown voltage VCBO=1500V .


    Original     		PDF ENN2962 2SC4124 100ns 2039D 2SC4124] 2SC4124 ITR06371 ITR06372 ITR06373 ITR06374 ITR06375

    2SC4109

    Abstract: ITR06331 ITR06332 ITR06333 ITR06334 ITR06335
    Text: Ordering number:ENN2474A NPN Triple Diffused Planar Silicon Transistor 2SC4109 400V/16A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2474A 2SC4109 00V/16A 2SC4109] 2SC4109 ITR06331 ITR06332 ITR06333 ITR06334 ITR06335

    2SC4106

    Abstract: transistor 2sc4106 ITR06304 ITR06305 ITR06306 ITR06307
    Text: Ordering number:ENN2471A NPN Triple Diffused Planar Silicon Transistor 2SC4106 400V/7A Switching Regulator Applications Features Package Dimensions • High breakdown voltage and high reliability. · High-speed switching. · Wide ASO. · Adoption of MBIT process.


    Original     		PDF ENN2471A 2SC4106 00V/7A 2010C 2SC4106] O-220AB 2SC4106 transistor 2sc4106 ITR06304 ITR06305 ITR06306 ITR06307

    7MN05S

    Abstract: ITR06895 ITR06897 ITR06898
    Text: 7MN05S Ordering number : EN8393A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 7MN05S High-Frequency General-Purpose Amplifier Applications Features • • • • High power gain. High fT fT=750MHz . Complementary pair with the 7MP05S.


    Original     		PDF 7MN05S EN8393A 750MHz) 7MP05S. 7MN05S ITR06895 ITR06897 ITR06898

    MCH4008

    Abstract: TB 2920
    Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 MCH4008 TB 2920

    2SC4123

    Abstract: ITR06361 ITR06362 ITR06363 ITR06364 ITR06365
    Text: Ordering number:ENN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN2956 2SC4123 100ns 2039D 2SC4123] 2SC4123 ITR06361 ITR06362 ITR06363 ITR06364 ITR06365

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN2956 NPN Triple Diffused Planar Silicon Transistor 2SC4123 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High breakdown voltage (VCBO=1500V). · High reliability (Adoption of HVP process).


    Original     		PDF ENN2956 2SC4123 100ns 2039D 2SC4123]

    Untitled

    Abstract: No abstract text available
    Text: 3MN03S Ordering number : EN8392A NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF 3MN03S EN8392A 320MHz 600mm2

    Untitled

    Abstract: No abstract text available
    Text: 3MN03S Ordering number : ENN8392 NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF ENN8392 3MN03S 320MHz 600mm2

    15GN01S

    Abstract: No abstract text available
    Text: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.0pF (VCB=10V)].


    Original     		PDF 15GN01S ENN7768 15GN01S

    AN 8054

    Abstract: 8054 transistor transistor zo 607 15GN01F
    Text: 15GN01F Ordering number : ENN7782 NPN Epitaxial Planar Silicon Transistor 15GN01F VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.05pF (VCB=10V)].


    Original     		PDF 15GN01F ENN7782 AN 8054 8054 transistor transistor zo 607 15GN01F

    7807 transistor

    Abstract: 15GN01S IC 4047 BE
    Text: 15GN01S Ordering number : ENN7768 NPN Epitaxial Planar Silicon Transistor 15GN01S VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • • Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.0pF (VCB=10V)].


    Original     		PDF 15GN01S ENN7768 7807 transistor 15GN01S IC 4047 BE

    transistor bf 760

    Abstract: MCH4008 945 npn
    Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .


    Original     		PDF MCH4008 ENN8395 20GHz S21e2 transistor bf 760 MCH4008 945 npn

    MAX 77693

    Abstract: ic 6264 ic 4074 55GN01C
    Text: 55GN01C Ordering number : ENN7769 NPN Epitaxial Planar Silicon Transistor 55GN01C UHF Wide-band Low-noise Amplifier Applications Features • • High cutoff frequency : fT= 5.5GHz typ. High gain : ⏐S21e⏐2=9.5dB typ f=1GHz . Specifications Absolute Maximum Ratings at Ta=25°C


    Original     		PDF 55GN01C ENN7769 S21e2 MAX 77693 ic 6264 ic 4074 55GN01C

    15GN01C

    Abstract: No abstract text available
    Text: Ordering number : ENN7724 15GN01C NPN Epitaxial Planar Silicon Transistor 15GN01C VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • Package Dimensions Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.2pF (VCB=10V)].


    Original     		PDF ENN7724 15GN01C 2018B 15GN01C] 15GN01C

    15GN01C

    Abstract: ta 7061 4425 ic
    Text: Ordering number : ENN7724 15GN01C NPN Epitaxial Planar Silicon Transistor 15GN01C VHF to UHF Band High-frequency Switching, Highfrequency General-Purpose Amplifier Applications Features • • Package Dimensions Small ON-resistance [Ron=2Ω IB=3mA ]. Small output capacitance [Cob=1.2pF (VCB=10V)].


    Original     		PDF ENN7724 15GN01C 2018B 15GN01C] 15GN01C ta 7061 4425 ic

    3MN03S

    Abstract: ITR05148 ITR05149 ITR05150 ITR05152 marking WA
    Text: 3MN03S Ordering number : EN8392A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 3MN03S High-Frequency General-Purpose Amplifier Applications Features • • Ultrasmall-sized package enabiling compactness and slimness of sets. High fT and small Cre fT=320MHz typ, Cre=0.95pF typ .


    Original     		PDF 3MN03S EN8392A 320MHz 3MN03S ITR05148 ITR05149 ITR05150 ITR05152 marking WA

    la 4440 amplifier circuit diagram 300 watt

    Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
    Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode


    OCR Scan     		PDF AN-784A la 4440 amplifier circuit diagram 300 watt la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492

    ksd 302 250v, 10a

    Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
    Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle


    OCR Scan     		PDF CB-F36c 2SD1642 2SD2182, 2SC4489, -08S- ksd 302 250v, 10a irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643