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    TRANSISTOR 86 PHILIPS Search Results

    TRANSISTOR 86 PHILIPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 86 PHILIPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Philips 4312 020

    Abstract: BLV25 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier
    Text: APPLICATION NOTE Wideband 300 W push-pull FM amplifier using BLV25 transistors AN98031 Philips Semiconductors Wideband 300 W push-pull FM amplifier using BLV25 transistors CONTENTS 1 INTRODUCTION 2 AMPLIFIER DESIGN THEORY 2.1 2.2 2.3 The output network The input network


    Original     		PDF BLV25 AN98031 BLV25 BLW86 SCA57 Philips 4312 020 Philips 2222 ferrite fxc3b fxc3b PHILIPS 4312 blw 64 rf transistor PHILIPS 4312 amplifier philips rf choke ferrite 151 schematic for 88 to 108 amplifier

    current fed push pull topology

    Abstract: "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors
    Text: Lighting Power Semiconductor Applications Philips Semiconductors CHAPTER 8 Lighting 8.1 Fluorescent Lamp Control 575 Lighting Power Semiconductor Applications Philips Semiconductors Fluorescent Lamp Control 577 Lighting Power Semiconductor Applications Philips Semiconductors


    Original     		PDF 50/60Hz current fed push pull topology "CHAPTER 1 Introduction to Power Semiconductors" Power Semiconductor Applications Philips Semiconductors transistor Electronic ballast "INDUCTION LAMP" "Power Semiconductor Applications" Philips 40w ELECTRONIC choke BALLAST DIAGRAM 230v 40w fluorescent lamp inverter circuit circuit diagram electronic ballast for 40W tube l circuit diagram electronic choke for tube light CHAPTER 1 Introduction to Power Semiconductors

    Power Semiconductor Applications Philips Semiconductors

    Abstract: "Power Semiconductor Applications" Philips "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors "static induction thyristor" varistor 503 static induction Thyristor TELEVISION EHT TRANSFORMERS 201 Static Induction Thyristor varistor 10c 471
    Text: Thermal Management Power Semiconductor Applications Philips Semiconductors CHAPTER 7 Thermal Management 7.1 Thermal Considerations 553 Thermal Management Power Semiconductor Applications Philips Semiconductors Thermal Considerations 555 Thermal Management


    Original     		PDF

    BUK7528-30

    Abstract: PHP45N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP45N03T BUK7528-30 PHP45N03T

    BUK7528-30

    Abstract: PHP42N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance


    Original     		PDF O220AB PHP42N03T BUK7528-30 PHP42N03T

    BUK7528-30

    Abstract: PHB42N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting using ’trench’ technology. The device


    Original     		PDF OT404 PHB42N03T BUK7528-30 PHB42N03T

    BUK7528-30

    Abstract: PHB45N03T
    Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic suitable for surface mounting envelope using ’trench’ technology. The device


    Original     		PDF OT404 PHB45N03T BUK7528-30 PHB45N03T

    BUK445-600B

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE bTE D • hbS3T31 003D575 Philips Semiconductors PowerMOS transistor PINNING -S O T 1 86 PIN BUK445-600B QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF hbS3T31 BUK445-600B -SOT186 BUK445-600B

    Untitled

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors Silicon Diffused Power Transistor BUT11AF GENERAL DESCRIPTION High-voltage, high-speed glass-passivated npn power transistor in a S O U 86 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.


    OCR Scan     		PDF BUT11AF

    Philips transistor k1

    Abstract: BUK445-600B
    Text: N AMER PH IL IPS/DISCRETE bTE D • hbS3T31 003D575 2ST « A P X Philips Semiconductors Product Specification PowerMOS transistor PINNING -S O T 1 86 PIN QUICK REFERENCE DATA SYMBOL PARAMETER < o Cl GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF 003D575 BUK445-600B PINNING-SOT186 /V-12 Philips transistor k1

    lc 945 p transistor NPN TO 92

    Abstract: BLX96 blx96a IEC134 lc 945 p transistor s3 vision
    Text: N AUER PHILIPS/DISCRETE ObE D 86 D 0 1 8 5 2 MAINTENANCE TYPE D ~ • T ^53*131 GOIHCHO T ~ ÔY [I "" BLX96 JL U.H.F. LINEAR POW ER TRANSISTOR N-P-N multi-emitter silicon planar epitaxial transistor primarily for use in linear u.h.f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF 0G14D10 BLX96 lc 945 p transistor NPN TO 92 BLX96 blx96a IEC134 lc 945 p transistor s3 vision

    Untitled

    Abstract: No abstract text available
    Text: i - 86D 0 1 86 0 m ObE D N AUER PHILIPS/DISCRETE D T - bbSBTBl DDIMDIS 3 T" 7 3 BLX97 MAINTENANCE TYPE U.H.F. LINEAR POWER TRANSISTOR N-P-N m ulti-em itter silicon planar epitaxial transistor primarily fo r use in linear u.h.f. amplifiers for television transposers and transmitters.


    OCR Scan     		PDF BLX97 class-78

    BLU51

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE OLE D 86 D 0 1 1 2 4 ^53^31 0Q133b2 □ D 7- - 3 3 - BLU 51 A V.H.F./U.H.F. PUSH-PULL POWER TRANSISTOR N-P-N silicon planar epitaxial push-pull transistor designed fo r use in m ilitary and professional wideband applications in the 30 to 400 MHz range.


    OCR Scan     		PDF 0Q133L BLU51 BLU51

    BLW 95

    Abstract: No abstract text available
    Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF

    BLV21

    Abstract: RF POWER TRANSISTOR NPN vhf
    Text: N A ME R PHILIPS/DISCRETE t 'îE j> m □ □ 2 ñ ci m IAPX t t d BLV21 I V.H.F. POWER TRANSISTOR N-P-N silicon planar ep itaxial transistor intended fo r use in class-A, B and C operated h .f. and v .h .f. transm itters w ith a nom inal supply voltage o f 2 8 V . T h e transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLV21 OT-123. D26li4fl 7Z68950 7Z689S1 7Z68949 BLV21 RF POWER TRANSISTOR NPN vhf

    639 TRANSISTOR PNP

    Abstract: BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFQ54T PHILIPS INTERNATIONAL D E S C R IP T IO N P N P transistor in a plastic S O T 3 7 package. It is primarily intended for use in M A TV and m icrowave amplifiers such a s in aerial amplifiers, radar


    OCR Scan     		PDF BFQ34T. BFQ54T 7110fl2ti cur25 UBB33S 711Dfi2ti 639 TRANSISTOR PNP BFQ34T TRANSISTOR P 3 BFQ54T philips MATV amplifiers GHz PNP transistor MEA336

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE m DbE J> 86D 01798 D Lb53T31 0Dm03L. 3 T - 31 ^ 6 * BLX91A A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF Lb53T31 0Dm03L. BLX91A D01404S 7Z68928

    Analog Voice scrambler

    Abstract: TDA7050 transistor 835 TRANSISTOR regulator PCF2104 transistor 458 AUDIO Amplifier with transistor BC548 Philips Semiconductors Selection Guide BSN10A 2n5551 128
    Text: Philips Semiconductors Functional index Selection guide PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 Multistandard programmable analog CMOS transmission IC 110 TEA1060; TEA1061 Versatile telephone transmission circuits with dialler interfac 483 TEA1062; TEA1062A


    OCR Scan     		PDF PCA1070 TEA1060; TEA1061 TEA1062; TEA1062A TEA1064A TEA1064B TEA1065 TEA1066T TEA1067 Analog Voice scrambler TDA7050 transistor 835 TRANSISTOR regulator PCF2104 transistor 458 AUDIO Amplifier with transistor BC548 Philips Semiconductors Selection Guide BSN10A 2n5551 128

    transistor 835

    Abstract: Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649
    Text: Philips Semiconductors Alphanumeric index Selection guide PAGE BC327; BC327A; BC328 Silicon planar epitaxial transistor 58 BC337; BC337A; BC338 Silicon planar epitaxial transistor 59 BC546; BC547; BC548 Silicon planar epitaxial transistor 60 BC556; BC557; BC558


    OCR Scan     		PDF BC327; BC327A; BC328 BC337; BC337A; BC338 BC546; BC547; BC548 BC556; transistor 835 Amplifier with transistor BC548 TRANSISTOR regulator AUDIO Amplifier with transistor BC548 transistor 81 110 w 85 transistor 81 110 w 63 transistor transistor 438 TRANSISTOR GUIDE transistor 649

    blv59

    Abstract: sot171
    Text: N AMER PHILIPS/DISCRETE bRE D • bbS3T31 □ □ 2 C1 G 7 4 A GTb BLV59 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar e p ita xia l tran sisto r in SOT-171 envelope p rim a rily intended fo r use as linear a m p lifie r in u.h .f. television transm itters.


    OCR Scan     		PDF bbS3T31 BLV59 OT-171 blv59 sot171

    BLX91A

    Abstract: BLX91 R33F 0180 capacitor de polyester MHA IEC134
    Text: N AMER~ PHILIPS/DISCRETE" 86D Dfc-E D • 1^53131 001403t. 01798 JI BLX91A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe


    OCR Scan     		PDF tbS3T31 001403t. BLX91A BLX91A BLX91 R33F 0180 capacitor de polyester MHA IEC134

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN video transistor BFQ225 APPLICATIONS • Primarily intended for cascode output and buffer stages in high resolution colour monitors. o DESCRIPTION NPN silicon transistor encapsulated in a 3-lead plastic SOT 128B package.


    OCR Scan     		PDF BFQ225 OT128B. UBG488

    multi-emitter transistor

    Abstract: SOT-48 BLX96 IEC134 BLX-96 IEC-134
    Text: bSE D • 7110a2b Q0b35MÛ 472 ■ PHIN MAINTENANCE TYPE_ | BLX96 PHILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N -P -N m u lti-e m itte r silicon planar ep itaxial transistor p rim a rily fo r use in linear u .h .f. am plifiers fo r television transposers and tran sm itters.


    OCR Scan     		PDF 711D82b BLX96 multi-emitter transistor SOT-48 BLX96 IEC134 BLX-96 IEC-134

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU508DW GENERAL DESCRIPTION High voltage, high-speed switching npn transistors in a plastic envelope with integrated efficiency diode, primarily for use in horizontal deflection circuits of colour television receivers.


    OCR Scan     		PDF BU508DW 100PD /PD25