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    TRANSISTOR 8FC Search Results

    TRANSISTOR 8FC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8FC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Transistor 8fc

    Abstract: marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF BC817W
    Text: BC817W NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description The BC817W is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Features * * * * For General AF Appliacations


    Original     		BC817W BC817W 100mA 100MHz width380 01-Jun-2002 Transistor 8fc marking A1 TRANSISTOR transistor 6B transistor marking MH 6C TRANSISTOR MARKING marking AF PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Collector Emitter Voltage


    OCR Scan     		BC817/BC818 OT-23 BC807/BC808 BC817 BC818 100mA 300mA 500mA, PDF

    8fc marking code

    Abstract: BC817 BC818 marking 8FC
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol Collector Emitter Voltage : BC817


    Original     		BC817/BC818 OT-23 BC807/BC808 BC817 BC818 8fc marking code BC817 BC818 marking 8FC PDF

    GSBC817

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/06/08 REVISED DATE : GSBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The GSBC817 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A A1 A2 D E HE


    Original     		GSBC817 GSBC817 PDF

    8FC SOT23

    Abstract: 8fc marking code on 8gb transistor BC817 sot23 marking 8fc vebo 25 BC818 marking 8fb
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta= 25°C R ating Symbol C haracteristic Collector Emitter Voltage: BC817


    OCR Scan     		BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC830 8FC SOT23 8fc marking code on 8gb transistor sot23 marking 8fc vebo 25 BC818 marking 8fb PDF

    8FC SOT23

    Abstract: marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 SWITCHING AND AMPLIFIER APPLICATIONS • Sutable for AF-Driver stages and low power output stages • Complement to BC807/BC808  ABSOLUTE MAXIMUM RATINGS TA=25 Characteristic Symbol Collector Emitter Voltage :BC817


    Original     		BC817/BC818 OT-23 BC807/BC808 BC817 BC818 100mA 8FC SOT23 marking 8FC 8fc marking code BC817 on 8gb transistor sot23 marking 8fc bc818 ic 817 marking 8fb silicon power 8GB PDF

    HBC817

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6831 Issued Date : 1994.01.25 Revised Date : 2002.10.24 Page No. : 1/3 HBC817 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC817 is designed for switching and AF amplifier amplification suitable for driver stages and low power output stages.


    Original     		HE6831 HBC817 HBC817 OT-23 PDF

    8FC SOT23

    Abstract: TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		BC817/BC818 BC817/BC818 BC807/ BC808 OT-23 BC817 BC818 BC817 8FC SOT23 TRANSISTOR 8FB sot23 marking 8fc marking 8FC sot23 marking 8fB Transistor 8fc transistor MARKING my BC81740MTF 8FC+SOT23 PDF

    8FC SOT23

    Abstract: BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages 3 • Complement to BC807/ BC808 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 8FC SOT23 BC81716MTF TRANSISTOR 8FB BC818 on 8gb transistor BC81740MTF BC807 BC808 BC817 BC81725MTF PDF

    transistor 8gb sot 23

    Abstract: No abstract text available
    Text: BC817/BC818 tm NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/ BC808 3 2 1 Absolute Maximum Ratings* Symbol VCBO VCEO 1. Base 2. Emitter 3. Collector


    Original     		BC817/BC818 BC807/ BC808 BC817 BC818 OT-23 BC817/BC818 transistor 8gb sot 23 PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR MJD340 HIGH VOLTAGE POWER TRANSISTORS DPAK FOR SURFACE MOUNT APPLICATIONS D-PAK • Lead Form ed fo r Surface M ount Applications No Suffix • Straight Lead (“ - I “ Suffix) ABSOLUTE MAXIMUM RATINGS Rating Unit C ollector Base Voltage


    OCR Scan     		MJD340 PDF

    BC817

    Abstract: BC818 8FC SOT23
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 8FC SOT23 PDF

    Untitled

    Abstract: No abstract text available
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • SUITABLE FOR AF-DRIVER STAGES AND LOW POWER OUTPUT STAGES • Complement to BC807/BC808 ABSOLUTE MAXIMUM RATINGS Ta=25°C Rating Unit 50 30 45 25 5 800 310 150 —6 5 ^1 5 0


    OCR Scan     		BC817/BC818 BC807/BC808 BC817 BC818 300mA PDF

    BC817

    Abstract: BC818 marking code fairchild marking 8FC
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 marking code fairchild marking 8FC PDF

    BC817

    Abstract: BC818
    Text: BC817/BC818 BC817/BC818 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC807/BC808 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted


    Original     		BC817/BC818 BC807/BC808 OT-23 BC817 BC818 BC817 BC818 PDF

    marking 8fb

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON TRANSISTOR BC817/BC818 S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable fo r A F-D river stages and low pow er output stages • C om plem ent to BC807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector Em itter V oltage


    OCR Scan     		BC817/BC818 BC807/BC BC817 BC818 25product marking 8fb PDF

    8fc marking code

    Abstract: TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC817 BC818
    Text: BC817/BC818 NPN EPITAXIAL SILICON TRANSISTOR S O T-23 SWITCHING AND AMPLIFIER APPLICATIONS • Suitable for A F-D river stages and low pow er output stages • C om plem ent to BC 807/BC 808 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollecto r E m itter V oltage


    OCR Scan     		BC817/BC818 BC807/BC808 BC817 BC818 OT-23 100mA 300mA 500mA, 8fc marking code TRANSISTOR 8FB 8FC SOT23 AF MARKING CODE B 817 ic 817 ic 817 b pc 817 BC818 PDF

    marking 6d

    Abstract: IPP147N12N
    Text: IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G "%&$!"# 3 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )*( K R  - @ ?>2 I ),&/ Z" -. I; 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB144N12N3 IPI147N12N3 IPP147N12N3 marking 6d IPP147N12N PDF

    marking 9D

    Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
    Text: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB06CN10N IPI06CN10N IPP06CN10N 8976BF6 marking 9D sd marking 8H PG-TO220-3 A6c DIODE PDF

    9926C

    Abstract: IPI037N06L3 s4si IPP037N06L3 G
    Text: IPB034N06L3 G Jf]R IPI037N06L3 G IPP037N06L3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9I R #562 =7@C9:89 7C6BF6? 4J DH:E49:? 8 2 ? 5 DJ? 4 C64 R  - @? > 2 I - ' R AE:> :K65 E649? @= @8J 7@C    4@? G6CE6CD I9   . K +&, Z" 1(


    Original     		IPB034N06L3 IPI037N06L3 IPP037N06L3 76BF6? 766substances. 9926C s4si IPP037N06L3 G PDF

    IPP05CN10N

    Abstract: No abstract text available
    Text: IPB05CN10N G IPI05CN10N G IPP05CN10N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; )( K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB05CN10N IPI05CN10N IPP05CN10N 8976BF6 PDF

    marking 6d

    Abstract: IPD110N12N3 G
    Text: IPD110N12N3 G IPS110N12N3 G "%&$!"#TM3Power-Transistor Features Product Summary R 492 ?6= ?@ C>2 =6G6= V ;I *( K R ;I"\[#$>2 I ) Z" I; /- 7 R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '  R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[# R   U @ A6C2 E:?8 E6>A6C2 E


    Original     		IPD110N12N3 IPS110N12N3 8976BF6 marking 6d IPD110N12N3 G PDF

    IPD110N12N3 G

    Abstract: No abstract text available
    Text: IPD110N12N3 G IPS110N12N3 G TM3Power-Transistor Features Product Summary R฀ 492?6=฀?@C>2=฀=6G6= V ;I *( K R ;I"\[#$>2I฀ ) Z I; /- 7 R฀ I46=6?E฀82E6฀492C86฀I฀R ;I"\[#฀AC@5F4E฀!)' R฀/6CJ฀=@H฀@? C6D:DE2?46฀R ;I"\[#


    Original     		IPD110N12N3 IPS110N12N3 492C86à E2C86Eà E96CH IPD110N12N3 G PDF

    IPP054NE8N

    Abstract: FX23L-100S-0.5SV
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV PDF