Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IPB051NE8N Search Results

    SF Impression Pixel

    IPB051NE8N Price and Stock

    Infineon Technologies AG IPB051NE8NGATMA1

    IPB051NE8 - OptlMOS N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB051NE8NGATMA1 775 1
    • 1 $1.58
    • 10 $1.58
    • 100 $1.49
    • 1000 $1.34
    • 10000 $1.34
    		Buy Now

    IPB051NE8N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IPB051NE8NG Infineon Technologies OptiMOS 2 Power-Transistor Original PDF

    IPB051NE8N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DIODE D100 to220

    Abstract: No abstract text available
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 05CNE8N DIODE D100 to220

    051NE8N

    Abstract: 054NE8N IEC61249-2-21 IPP054NE8N PG-TO220-3
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 054NE8N IEC61249-2-21 PG-TO220-3

    054NE8N

    Abstract: 3210 smd marking 051ne8n ipi054n
    Text: IPB051NE8N G IPI054NE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB051NE8N IPI054NE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 054NE8N 054NE8N 3210 smd marking 051ne8n ipi054n

    IPP054NE8N

    Abstract: FX23L-100S-0.5SV
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G "%&$!"# 2 Power-Transistor Product Summary Features V ;I R 492 ?6= ?@ C>2 =6G6= R  - @ ?>2 I. R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E!) '   I; 0- K -&) Z" )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N 8976BF6 FX23L-100S-0.5SV

    051ne8n

    Abstract: 054NE8N 05CNE8N IPB051NE8NG IPP054NE8N PG-TO220-3 IPI05CNE8NG
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n 054NE8N 05CNE8N IPB051NE8NG PG-TO220-3 IPI05CNE8NG

    051ne8n

    Abstract: IPP054NE8N PG-TO220-3
    Text: IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO 263) 5.1 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n PG-TO220-3

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		PDF B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book

    3bs02

    Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather


    Original     		PDF Infineo866-95 B152-H8926-G2-X-7600 NB08-1069 3bs02 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J