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    051NE8N Price and Stock

    Infineon Technologies AG IPB051NE8NGATMA1

    IPB051NE8 - OptlMOS N-Channel Power MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPB051NE8NGATMA1 775 1
    • 1 $1.58
    • 10 $1.58
    • 100 $1.49
    • 1000 $1.34
    • 10000 $1.34
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    051NE8N Datasheets Context Search

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    DIODE D100 to220

    Abstract: No abstract text available
    Text: 051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 05CNE8N DIODE D100 to220

    051NE8N

    Abstract: 054NE8N IEC61249-2-21 IPP054NE8N PG-TO220-3
    Text: 051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 054NE8N IEC61249-2-21 PG-TO220-3

    054NE8N

    Abstract: 3210 smd marking 051ne8n ipi054n
    Text: 051NE8N G IPI054NE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max 5.1 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB051NE8N IPI054NE8N IPP054NE8N PG-TO263-3 051NE8N PG-TO262-3 054NE8N 054NE8N 3210 smd marking 051ne8n ipi054n

    051ne8n

    Abstract: 054NE8N 05CNE8N IPB051NE8NG IPP054NE8N PG-TO220-3 IPI05CNE8NG
    Text: 051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO 263) 5.1 mΩ ID 100 A • Very low on-resistance R DS(on)


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n 054NE8N 05CNE8N IPB051NE8NG PG-TO220-3 IPI05CNE8NG

    PEF 24628

    Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
    Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by


    Original     		PDF B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819

    051ne8n

    Abstract: IPP054NE8N PG-TO220-3
    Text: 051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO 263) 5.1 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature


    Original     		PDF IPB051NE8N IPI05CNE8N IPP054NE8N PG-TO263-3 PG-TO262-3 PG-TO220-3 051NE8N 051ne8n PG-TO220-3