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    TRANSISTOR 8P Search Results

    TRANSISTOR 8P Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 8P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    transistor

    Abstract: POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list
    Text: Transistor Bipolar Transistor Transistor with Internal Resistor Quick Reference by Package Product List Quick Reference by Function/Application Small Signal Transistor Transistor for Array Power Transistor Bipolar Transistor MOS,FET Field Effect Transistor


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    X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45 MP-45F O-220 MP-80 MP-10 transistor POWER MOS FET 2sj 2sk transistor 2sk 2SK type n channel fet array Low frequency power transistor transistor mp40 TRANSISTOR P 3 high hfe transistor list PDF

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


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    PDF

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P PDF

    transistor

    Abstract: transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor
    Text: Road map Transistor Package Function / Application Bipolar Transistor Bipolar Transistor MOS FET Low VCE sat Transistor VDSS - ID(DC) (Small Signal MOS FET) High hFE Transistor 4VGate Driven Series Low Voltage, High Speed Switching Transistor 2.5VGate Driven Series


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    X13769XJ2V0CD00 O-126) MP-25 O-220) MP-40 MP-45, MP-45F MP-25 MP-80 transistor transistor mp40 BIPOLAR TRANSISTOR mp25 TRANSISTOR FET 8PIN MP40 SERIES small signal audio FET transistor TO220 MP40 high hfe transistor PDF

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


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    2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor PDF

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j PDF

    PRSP0008DA-B

    Abstract: No abstract text available
    Text: Magazine code Magazine material MP225PC PVC Polyvinyl chloride Package name Renesas code Previous code SOP-8 PRSP0008DA-B 8P2S-B Maximum storage No. Maximum storage No. Maximum storage No. Packing form Transistor/Magazine Magazine/Inner box Transistor/Inner box


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    MP225PC PRSP0008DA-B PRSP0008DA-B PDF

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Text: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


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    PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6 PDF

    B200

    Abstract: No abstract text available
    Text: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger


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    O-100 O-100 B200 PDF

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM SOLUTIONS TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger


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    O-100 917-XX-208-41-001000 917-XX-210-41-001000 917-XX-XXX-41-001799 2011/65/EU PDF

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM SOLUTIONS TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger


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    O-100 917-XX-208-41-001000 917-XX-210-41-001000 917-XX-XXX-41-001799 2011/65/EU PDF

    2SA1444 equivalent

    Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
    Text: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗2SA988 2SA992


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    X13769XJ2V0CD00 2SA1206 2SC1674 2SA988 2SA992 2SC1841 2SC1845 2SA733 2SA990 2SC945 2SA1444 equivalent BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent PDF

    transistor sockets

    Abstract: transistor surface mount transistor 8 B200 To5 transistor
    Text: MAXIMUM solutions TO-5 and TO-100 Through-Hole and Surface Mount Transistor Sockets TO-5 and TO-100 transistor sockets make field insertion and removal easy and convenient. Inside each transistor socket are precision-machined, brass alloy receptacles assembled with a Mill-Max, 4-finger


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    O-100 O-100 transistor sockets transistor surface mount transistor 8 B200 To5 transistor PDF

    Transistor B 1566

    Abstract: ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734
    Text: UHF POWER TRANSISTOR DRF1402F NPN SiGe RF TRANSISTOR SOT-89 The DRF1402F is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-89 SMD package. 4 The DRF1402F can be used as a driver device or an output device, depending on the specific application


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    DRF1402F OT-89 DRF1402F OT-89 465MHz 100nF Transistor B 1566 ic smd a 1712 smd transistor zl SMD l4 Transistor B 1566 Transistor SMD TRANSISTOR L6 smd transistor js RF transistor SOT-89 NPN medium power transistor in a smd transistor 1734 PDF

    rjh3047

    Abstract: rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055
    Text: 2007.12 Renesas Discrete General Catalog Transistor/Diode/ Triac/ Thyristor www.renesas.com Triacs and Thyristors Small-Signal Transistors Power Transistor Renesas discrete devices: extending the limits Advanced electronic equipment requires larger data processing


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    REJ01G0001-0400 rjh3047 rjh3077 rjp3047 RJH3047DPK rjp3049 rjp6065 rjp3053 RJP3042 smd code FX mosfet RJP6055 PDF

    BP317

    Abstract: MS-012AA PHP1035
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor


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    PHP1035 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1035 PDF

    BP317

    Abstract: MS-012AA PHP1025
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025


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    PHP1025 SC13b OT96-1 SCA57 135108/00/01/pp8 BP317 MS-012AA PHP1025 PDF

    BP317

    Abstract: MS-012AA PHN1013
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor PHN1013


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    PHN1013 SC13b OT96-1 SCA54 137107/00/01/pp8 BP317 MS-012AA PHN1013 PDF

    C151

    Abstract: C202 RS21501 RS23301 RS23603
    Text: PRODUCT SUMMARY RS23301: Heterojunction Bipolar Transistor Power Amplifier For Personal Handyphone Systems APPLICATIONS DESCRIPTION • PHS handsets The RS23301 Heterojunction Bipolar Transistor HBT Power Amplifier (PA) is part of Skyworks' Personal Handyphone


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    RS23301: RS23301 03140A C151 C202 RS21501 RS23603 PDF

    BLF1046

    Abstract: BP317 TEKELec 467
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLF1046 UHF power LDMOS transistor Preliminary specification 2000 Sep 20 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF1046 PINNING - SOT467C FEATURES • High power gain PIN DESCRIPTION


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    M3D381 BLF1046 OT467C 603516/04/pp11 BLF1046 BP317 TEKELec 467 PDF

    PHP109

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET PHP109 P-channel enhancement mode MOS transistor Product specification File under Discrete Semiconductors, SC07 1996 Jun 11 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor PHP109 FEATURES


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    PHP109 OT96-1) SCA49 117061/1200/01/pp12 PHP109 PDF

    u101b

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


    OCR Scan
    uPA101B 14-pin tPA101G u101b PDF

    2SC288A

    Abstract: 2SC288A 5.B
    Text: SEC SILICON TRANSISTOR ELECTRON DEVICE 2SC288A 5-B UHF OSCILLATOR NPN SILICON EPITAXIAL TRANSISTOR "D ISK MOLD" DESCRIPTION PACKAGE DIMENSIONS The 2 S C 2 8 8 A I5 B ) is an NPN silicon epitaxial transistor intended fo r use in m illim e te r s (inch es)


    OCR Scan
    2SC288A 1300MHz 400MHz 600MHz 2SC288A 5.B PDF

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BSH301 Dual N-channel enhancement mode MOS transistor Objective specification Philips Sem iconductors 1999 Apr 06 PHILIPS Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor BSH301 FEATURES


    OCR Scan
    BSH301 BSH301 OT53Q) OT53Q 135002/00/01/pp5 PDF