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Philips Semiconductors PHN1013
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	PHN1013		4,240			1 - 10 - 100 - 1000 - 10000 -	Get Quote
ComSIT USA	PHN1013		17,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote

PHN1013 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
PHN1013		Philips Semiconductors	N-channel enhancement mode MOS transistor		Original	PDF
PHN1013		Philips Semiconductors	TrenchMOS transistor		Original	PDF
PHN1013T/R		Philips Semiconductors	Transistor Mosfet N-CH 30V 10A 8SOT-96		Original	PDF

PHN1013 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PHN1013 Abstract: No abstract text available Text: Philips Semiconductors Product specification TrenchMOS transistor FEATURES PHN1013 SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low-profile surface mount	Original	PDF	PHN1013 PHN1013
BP317 Abstract: MS-012AA PHN1013 Text: DISCRETE SEMICONDUCTORS DATA SHEET PHN1013 N-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Objective specification N-channel enhancement mode MOS transistor PHN1013	Original	PDF	PHN1013 SC13b OT96-1 SCA54 137107/00/01/pp8 BP317 MS-012AA PHN1013
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
PHN103S Abstract: No abstract text available Text: Philips Semiconductors Product specification N-channel TrenchMOSTM transistor & schottky diode FEATURES SYMBOL • MOSFET + Schottky diode in the same package • Low threshold voltage • Extremely fast switching • Logic level compatible • Surface mount package	Original	PDF	PHN103S PHN103S OT96-1
mosfet cross reference Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P	Original	PDF	2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
SSP35n03 Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A	Original	PDF	5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
SSH6N80 Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L	Original	PDF	BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
S3 DIODE schottky Abstract: 3522V PHN603S SO24 SOT137-1 Text: Philips Semiconductors Product specification TrenchMOS/ Schottky diode array Three phase brushless d.c. motor driver FEATURES PHN603S SYMBOL • Schottky diode across each MOSFET • Low on-state resistance • Fast switching • Logic level compatible • Surface mount package	Original	PDF	PHN603S S3 DIODE schottky 3522V PHN603S SO24 SOT137-1
Philips TdA3619 Abstract: on4408 tda3619 on4827 TDA5247HT on4785 OF622 FAST RECOVERY DIODE ON4913 on4802 OQ9811T Text: PRODUCT DISCONTINUATION DN43 NOTICE June 30, 2000 Exhibit A SEE DN43 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol" FOR ADDED INFORMATION.	Original	PDF
MOSFET dual SOP-8 Abstract: UPA1712G channel mosfet sop_8 uPA1711 IRF7205 UPA1711G BUZ215 NDS9945 BUZ382 BUZ384 Text: SINGLE & DUAL N & P CHANNEL MOSFETS SINGLE N & P CHANNEL MOSFETS • • • • • • • • • • The latest comprehensive data to fully support these parts is readily available. SOP-8 DIMENSIONS • • • • • • 5.37 max. TA = 25˚C Op Volt VDSS VGSS	Original	PDF	PA1701 PA1701A PA1704 PA1700 PA1700A PA1705 PA1702 PA1703 PA1707 PA1706 MOSFET dual SOP-8 UPA1712G channel mosfet sop_8 uPA1711 IRF7205 UPA1711G BUZ215 NDS9945 BUZ382 BUZ384
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	PDF	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
diode T96 Abstract: N10-13 Text: Philips Semiconductors Product specification T renchMOS transistor FEATURES PHN1013 SYMBOL QUICK R EFEREN CE DATA • 'Trench' technology • Low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance	OCR Scan	PDF	PHN1013 N1013 diode T96 N10-13
transistor 20107 Abstract: transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier Text: TARGET SYSTEMS PRODUCTS Function Type Description Cellular N AMPS /{E> TACS IS-54/-136 TDMA IS—95 CDMA Cordless GSM DCS1800 PCS PDC RF Amplifiers { SA5200 CTO CT1 SS X X Wireless Data DECT PHS 802.11 CDPD X X Gain block-1 GHZ PAGERS RF Front End SA611 1 GHz low voli LNA and mixer	OCR Scan	PDF	SA5200 SA611 SA2420 SA621 SA1620 SA1921 UAA2073 UAA2077AM UAA2077BM UAA2077CM transistor 20107 transistor dk 50 PCD5042 bfg520w vco application note BFG591 Application Notes DK 51* transistor bfg520 antenna preamplifier BP547 bfg135 application note MPSH10 small amplifier
BS107 spice Abstract: BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 PHD69N03LT bsh201 SFE 7.2 k75-10 Text: Philips Semiconductors PowerMOS Transistors Selection guide POWERMOS SELECTION GUIDE Vos V RoS(ori) (Ohm) @Id (A) tamax (A) Pûmax (W) TYPE NUMBER TECHNOLOGY PACKAGE PAGE 25 0.01 25 75 142 PHB87N03LT L2 TrenchMOS N SOT404 1656 25 0.01 25 75 142 PHP87N03LT	OCR Scan	PDF	PHB87N03LT PHP87N03LT PHB69N03LT PHD69N03LT PHP69N03LT PHB55N03LT PHD55N03LT PHP55N03LT PHB50N03LT PHP50N03LT BS107 spice BS108 spice K9614 Philips Semiconductors Selection Guide BUK7535-55 K9514 bsh201 SFE 7.2 k75-10