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    TRANSISTOR 9016 Search Results

    TRANSISTOR 9016 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR 9016 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    9275 transistor

    Abstract: transistor k 208 MPSA42 MPSA42 multicomp
    Text: MPSA42 High Voltage Transistor Features: • Devices with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN silicon planar epitaxial transistor. • Complementary high Voltage Transistor.


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    PDF MPSA42 9275 transistor transistor k 208 MPSA42 MPSA42 multicomp

    MPSA42

    Abstract: No abstract text available
    Text: MPSA42 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Silicon Planar Epitaxial Transistor. • Complementary high Voltage Transistor.


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    PDF MPSA42 MPSA42

    Transistor C G 774 6-1

    Abstract: transistor 2N4033 2N4033
    Text: 2N4033 General Purpose Transistor Amplifiers/Switches Features: • PNP Silicon Planar RF Transistor. • Small Signal General Purpose Amplifier, Transistor. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39 B 7.74 8.50 C 6.09 6.60 D 0.40 0.53


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    PDF 2N4033 Transistor C G 774 6-1 transistor 2N4033 2N4033

    9016 transistor

    Abstract: F 9016 transistor npn 9016 transistor 9016 97 G transistor ic st 9016 hFE is transistor 9016 npn transistor 9016 npn
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    9016 transistor

    Abstract: F 9016 transistor 9016 st 9016 transistor 9016 npn npn 9016 transistor
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    9016 transistor

    Abstract: F 9016 transistor npn 9016 transistor
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    npn 9016 transistor

    Abstract: 9016 transistor transistor 9016 npn st 9016 F 9016 transistor 9016 transistor 9016 H 9016 9016 NPN transistor st9016
    Text: ST 9016 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into six groups, D, E, F, G, H and I, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


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    2N3442

    Abstract: transistor 2n3442 npn 9016 transistor transistor 9016 npn
    Text: 2N3442 High Power Industrial Transistor NPN silicon power transistor designed for application in industrial and commercial equipment including high fidelity audio amplifiers, series and shunt regulators and power switches. Features: • Collector-Emitter Sustaining Voltage


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    PDF 2N3442 2N3442 transistor 2n3442 npn 9016 transistor transistor 9016 npn

    IN5817 schottky diode symbol

    Abstract: 1N5817 595D IN5817 MA737 TC120 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    PDF TC120 600mA 300kHz TC120503EHA TC120 system420 D-81739 DS21365B-page IN5817 schottky diode symbol 1N5817 595D IN5817 MA737 TC120303EHA TC120333EHA TC120503EHA equivalent components for transistor 2N2222

    pin configuration transistor 2N2222A

    Abstract: NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A
    Text: 2N2222A High Speed Switching Transistor Features: • NPN Silicon Planar Switching Transistor. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • Switching and Linear application DC and VHF Amplifier applications.


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    PDF 2N2222A pin configuration transistor 2N2222A NPN transistor 2n2222A 2N2222A 0612 2N2222A IC 358 of 2N2222A

    transistor 7333

    Abstract: BU426A
    Text: BU426A Power Transistor High Voltage Switching BU426A type is a fast switching high voltage transistor, more specially intended for operating in colour TV supply systems. Features: • Collector-Emitter sustaining voltage VCEO sus = 400V (Minimum) - BU426A.


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    PDF BU426A BU426A BU426A. transistor 7333

    BUW12A

    Abstract: transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V
    Text: BUW12A 8A Power Transistors High Voltage Switching Features: High Voltage Power Transistor is a fast switching high voltage transistor, more specially intended for operating in industrial. • Collector-Emitter Sustaining Voltage VCEO sus = 450V (Minimum) - BUW12A.


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    PDF BUW12A BUW12A. BUW12A transistor 1000V 6A F 9016 transistor NPN Transistor VCEO 1000V

    high power transistor

    Abstract: transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A
    Text: 2N3772 High Power Transistor High power NPN silicon power transistor. General-Purpose linear amplifier, series pass regulators and inductive switching applications. Features: • Low Collector-Emitter Saturation Voltage VCE sat = 4.0V (Maximum) at IC = 20A, IB = 4.0A.


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    PDF 2N3772 high power transistor transistor 7333 Transistor 358 to3 2N3772 transistor 928 2N3772 APPLICATIONS transistor 358 to-3 358 transistor 2N3772A

    SS TRANSISTOR

    Abstract: No abstract text available
    Text: TC120 PWM/PFM Step-Down Combination Regulator/Controller Package Type Features 8-Pin SOP • Internal Switching Transistor Supports 600mA Output Current • External Switching Transistor Control for Output Currents of 2A+ • 300kHz Oscillator Frequency Supports Small


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    PDF TC120 600mA 300kHz TC120503EHA TC120303EHA D-81739 DS21365B-page SS TRANSISTOR

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


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    PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    transistor for horizontal deflection output

    Abstract: NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor
    Text: BU406 7A Power Transistor, 200V High Voltage Switching Features: High voltage, high speed transistor for horizontal deflection output stages of TV and CTV circuits. • Collector-Emitter Sustaining Voltage VCEV = 400V Minimum . • Low Saturation Voltage VCE(sat) = 1.0V (Maximum) at IC = 5.0A.


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    PDF BU406 transistor for horizontal deflection output NPN Transistor 50A 400V 32 TV power transistor BU406 transistor BU406 358 transistor

    MPSA44

    Abstract: ptc c 995 MA 2810
    Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN epitaxial planar silicon transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,


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    PDF MPSA44 MPSA44 ptc c 995 MA 2810

    npn darlington transistor 200 watts

    Abstract: transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806
    Text: BU806 Darlington Power Transistor Fast Switching Darlington Transistor are high voltage, high current devices for fast switching applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 200V (Minimum). • Low Collector-Emitter Saturation Voltage VCE(sat) = 1.5V (Maximum) at IC = 5.0A, IB = 50mA.


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    PDF BU806 npn darlington transistor 200 watts transistor 7333 bu806 equivalent 1462, TRANSISTOR BU806

    pin configuration pnp transistor mpsa92

    Abstract: mpsa92 MPSA42 9016 transistor
    Text: MPSA92 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • PNP Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages,


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    PDF MPSA92 MPSA42. pin configuration pnp transistor mpsa92 mpsa92 MPSA42 9016 transistor

    MJ4502

    Abstract: MJ4502 EQUIVALENT transistor mj4502 A3105
    Text: MJ4502 Power Transistor High-Power PNP Silicon Transistor is used as an output device in complementary audio amplifiers to 100 Watts music power per channel. Features: • Continuous Collector Current - IC = 30A. • High DC Current Gain - hFE = 25 - 100 at IC = 7.5A.


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    PDF MJ4502 750mA. MJ4502 MJ4502 EQUIVALENT transistor mj4502 A3105

    MPSA44

    Abstract: 9016 transistor
    Text: MPSA44 High Voltage Transistor Features: • Device with breakdown voltages of 160V minimum, for applications requiring relatively low collector current, such as lamp drivers and neon tubes. • NPN Epitaxial Planar Silicon Transistor. • Designed for General Purpose Applications Requiring High Breakdown Voltages, Low


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    PDF MPSA44 MPSA44 9016 transistor

    diode st 4148

    Abstract: ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148 1N4001-1N4007
    Text: TRANSISTOR & DIODE Transistor -S T 8050 - 1.5A TO-92 - ST 8050 (TO-92) - ST 8550 - 1.5A (TO-92) - ST 8550 (TO-92) - ST 9011 (TO-92) - ST 9012 (TO-92) - ST 9013 (TO-92) - ST 9014 (TO-92 -S T 9015 (TO-92) - ST 9016 (TO-92) -S T 9018 (TO-92) o - MMBT8050LT1 -1.5A (SOT-23)


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    PDF MMBT8050LT1 OT-23) -LL4001-LL4007 -LL4148 1N4001-1N4007 diode st 4148 ST 4148 LL4148 st 8050 sot-23 st 8050 9016 transistor 9014 SOT 23 4148 st TRANSISTOR 4148

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


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    PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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