MARKING P2Z
Abstract: SGA9289 SGA-9289 130C J231 transistor j392 sot89
Text: SGA-9289 Z SGA-9289(Z) Medium Power Discrete SiGe Transistor MEDIUM POWER DISCRETE SiGe TRANSISTOR RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SGA-9289 is a high performance transistor designed for operation to
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SGA-9289
OT-89
SGA9289Z"
SGA9289"
SGA-9289Z
EDS-101498
SGA-9289
MARKING P2Z
SGA9289
130C
J231 transistor
j392
sot89
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CS1W-CN118
Abstract: AR2315 CS1W-CN114 cable connection diagram CPM2C-BAT01 cn118 CS1W-CN118 cable connection diagram CN111 CPM2C CS1W-CN118 cable datasheet 500 hour counter with memory function circuit diagram
Text: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs Transistor outputs CPU Units with 20 I/O points Transistor outputs Expansion I/O Units 10 I/O points (Relay outputs) 24 I/O points (Transistor outputs) Supply voltage
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075-mm
accele300
OUT01000
OUT01001:
OUT01002
CS1W-CN118
AR2315
CS1W-CN114 cable connection diagram
CPM2C-BAT01
cn118
CS1W-CN118 cable connection diagram
CN111
CPM2C
CS1W-CN118 cable datasheet
500 hour counter with memory function circuit diagram
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ZO 103 MA 75 623
Abstract: ZO 103 MA 75 542 1 928 405 767 NEC C 3568 TD-2433 2SC5008 2SC5008-T1 4557 nec 518 1149 0 44 111 1 928 405 452
Text: DATA SHEET SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5008 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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2SC5008
2SC5008
ZO 103 MA 75 623
ZO 103 MA 75 542
1 928 405 767
NEC C 3568
TD-2433
2SC5008-T1
4557 nec
518 1149 0 44 111
1 928 405 452
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J231 transistor
Abstract: j392 diode germanium tu 38 f SGA-9289 130C SiGe POWER TRANSISTOR transistor RF S-parameters transistor J9 SGA9289Z
Text: Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=27.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor SiGe
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SGA-9289
SGA-9289Z
SGA-9289
270mA
OT-89
EDS-101498
J231 transistor
j392
diode germanium tu 38 f
130C
SiGe POWER TRANSISTOR
transistor RF S-parameters
transistor J9
SGA9289Z
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SGA-9289
Abstract: j392 J231 transistor SGA-9289Z
Text: Preliminary Preliminary SGA-9289 SGA-9289Z Product Description Sirenza Microdevices’ SGA-9289 is a high performance transistor designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=42.5 dBm and P1dB=28 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor
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SGA-9289
OT-89
EDS-101498
j392
J231 transistor
SGA-9289Z
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SOT-23 AAAA
Abstract: 276-116 BFQ67W BFQ67 BFQ67R SOT-23 marking 717 SOT-23 AAAA transistor
Text: BFQ67/BFQ67R/BFQ67W Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
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BFQ67/BFQ67R/BFQ67W
BFQ67
BFQ67R
BFQ67W
D-74025
20-Jan-99
SOT-23 AAAA
276-116
SOT-23 marking 717
SOT-23 AAAA transistor
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BFR280T
Abstract: No abstract text available
Text: BFR280T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For low noise and small signal low power amplifiers. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features
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BFR280T
D-74025
BFR280T
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BFQ67
Abstract: temic 0675
Text: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFQ67
D-74025
17-Apr-96
BFQ67
temic 0675
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transistor MAR 825
Abstract: MAR 641 TRANSISTOR transistor MAR 543 MAR 618 transistor BFQ67 temic 0675 transistor MAR 819 marking v2 sot 1301
Text: BFQ67 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.
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BFQ67
D-74025
24-Mar-97
transistor MAR 825
MAR 641 TRANSISTOR
transistor MAR 543
MAR 618 transistor
BFQ67
temic 0675
transistor MAR 819
marking v2
sot 1301
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NEC 7924
Abstract: ic 7924 2SC5013 2SC5013-T1 2SC5013-T2 application of IC 4538
Text: DATA SHEET SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fT = 10 GHz TYP. in millimeters QUANTITY 2SC5013-T1
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2SC5013
2SC5013-T1
2SC5013-T2
NEC 7924
ic 7924
2SC5013
2SC5013-T1
2SC5013-T2
application of IC 4538
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NPN transistor mhz s-parameter
Abstract: transistor c 2316
Text: S 852 T TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise, low current, low voltage, high gain, 50 Ohm transistor for 945 MHz cordless telephone, pager, and low current UHF remote control applications. Features D Low supply voltage
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D-74025
NPN transistor mhz s-parameter
transistor c 2316
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temic 0675
Abstract: BFQ 540 application
Text: BFQ 67 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies. Features D Small feedback capacitance
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D-74025
temic 0675
BFQ 540 application
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BFQ67W
Abstract: 15.931 BFQ67 BFQ67R transistor marking WV2
Text: BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
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BFQ67/BFQ67R/BFQ67W
BFQ67
BFQ67R
BFQ67W
D-74025
20-Jan-99
15.931
transistor marking WV2
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ZO 107 MA
Abstract: 341S
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5009 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION The 2SC5009 is an NPN epitaxial silicon transistor designed for use PACKAGE DIMENSIONS in low noise and small signal am plifiers from VHF band to L band. Low
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2SC5009
2SC5009
ZO 107 MA
341S
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IC SEM 2105
Abstract: 3771 nec
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal amplifiers from VHF band to L band. Low
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OCR Scan
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2SC5008
2SC5008
IC SEM 2105
3771 nec
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PDF
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928 606 402 00
Abstract: No abstract text available
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5008 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC5008 is an NPN epitaxial silicon transistor designed for use in millimeters in low noise and small signal am plifiers from VHF band to L band. Low
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OCR Scan
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2SC5008
2SC5008
928 606 402 00
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2sk92
Abstract: 2SK928 nec 2501 LD mos 4009 2SK9
Text: DATA SHEET Preliminary NEC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ELECTRON DEVICE D ESCRIPTION 2 SK 928 The 2SK928 is N-channel MOS Field E ffect Power Transistor designed fo r sw itching power supplies, DC-DC converters. FEATURES • Suitable fo r switching power supplies, actuater controls,
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2SK928
1988M
2sk92
nec 2501 LD
mos 4009
2SK9
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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OCR Scan
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BUK583-60A
OT223
BUK583-60A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount
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OCR Scan
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BUK583-60A
OT223
BUK583-60A
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transistor 502
Abstract: transistor BF 502 transistor BF 506 BF502
Text: ESC D • ÔSBSbQS ÛQQ45GS ■SIEG ^ 7^-î/- z * NPN Silicon RF Transistor BF502 SIEMENS AKT IEN GE SE LL SC H AF >4505 0 - | BF 502 is an NPN silicon planar RF transistor in TO 92 plastic package 1 0 A 3 D I N 4 1 868 . The transistor is particularly intended for use in VHF amplifiers, VHF mixers, and VHF
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62702-F572
100MHz)
transistor 502
transistor BF 502
transistor BF 506
BF502
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance
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BUK7514-30
T0220AB
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PDF
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Untitled
Abstract: No abstract text available
Text: Y S55y BFQ67/BFQ67R/BFQ67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated
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OCR Scan
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BFQ67/BFQ67R/BFQ67W
BFQ67
BFQ67R
BFQ67W
20-Jan-99
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PDF
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CD 1691 CB
Abstract: NEC 7924 NEC D 986 IC - 7434
Text: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product fr = 10 GHz TYP. • Low Noise, High Gain •
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OCR Scan
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2SC5013
2SC5013-T1
2SC5013-T2
CD 1691 CB
NEC 7924
NEC D 986
IC - 7434
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