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    TRANSISTOR A1012 Search Results

    TRANSISTOR A1012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor A1012

    Abstract: a1012 transistor UTC A1012 A1012
    Text: UTC A1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNPEPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for silicon current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(MAX.) at Ic=-3A *High speed switching time Tstg=1.0us(Typ.)


    Original     		PDF A1012 A1012 2SC2562 O-220 transistor A1012 a1012 transistor UTC A1012

    a1012 transistor

    Abstract: transistor A1012 a1012 a1012* transistor
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		PDF 2SA1012 A1012 2SC2562 O-220 QW-R203-015 a1012 transistor transistor A1012 a1012* transistor

    Untitled

    Abstract: No abstract text available
    Text: UTC 2SA1012 SILICON PNP EPITAXIAL TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The A1012 is designed for high current switching application. 1 FEATURES *Low collector saturation voltage Vce sat =-0.4V(max.) at Ic=-3A *High speed switching time tstg=1.0µs(Typ.)


    Original     		PDF 2SA1012 A1012 2SC2562 O-252 QW-R209-008

    2n6660

    Abstract: No abstract text available
    Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6660 2N6660 DSFP-2N6660 A101207

    tn5cw

    Abstract: TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2524 125pF O-243, DSFP-TN2524 A101207 tn5cw TN2524 TN5C fet sot-89 marking code mos die TN2524N8-G TN2524ND

    Untitled

    Abstract: No abstract text available
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6661 2N6661 DSFP-2N6661 A101207

    Untitled

    Abstract: No abstract text available
    Text: 2N6661 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6661 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6661 2N6661 DSFP-2N6661 A101207

    Untitled

    Abstract: No abstract text available
    Text: TN2524 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► This low threshold, enhancement-mode normally-off transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This


    Original     		PDF TN2524 125pF TN2524 O-243AA OT-89) O-243, DSFP-TN2524 A101207

    a1012 transistor

    Abstract: transistor A1012 A1012 a1012* transistor IC 4047 BTA1012E3 C601E3 BTA1012 A-101-2 data sheet of IC 4047
    Text: CYStech Electronics Corp. Spec. No. : C601E3 Issued Date : 2004.07.26 Revised Date : Page No. : 1/4 Low Vcesat PNP Epitaxial Planar Transistor BTA1012E3 Features • Low VCE sat , VCE(sat)=-0.4 V (typical), at IC / IB = -3A / -0.15A • Excellent DC current gain characteristics


    Original     		PDF C601E3 BTA1012E3 O-220AB UL94V-0 a1012 transistor transistor A1012 A1012 a1012* transistor IC 4047 BTA1012E3 C601E3 BTA1012 A-101-2 data sheet of IC 4047

    Untitled

    Abstract: No abstract text available
    Text: 2N6660 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► ► ► ► The Supertex 2N6660 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		PDF 2N6660 2N6660 DSFP-2N6660 A101207

    transistor d468

    Abstract: D468 transistor transistor D468 circuit diagram application transistor A1012 a1012 transistor A1012 thermistor RY 126 BBV transistor 4 pin battery charger laptop 12v d468
    Text: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.


    Original     		PDF AIC1782 AIC1782 transistor d468 D468 transistor transistor D468 circuit diagram application transistor A1012 a1012 transistor A1012 thermistor RY 126 BBV transistor 4 pin battery charger laptop 12v d468

    AIC1782

    Abstract: a1012 transistor D468 transistor transistor d468 d468 transistor A1012 thermistor RY 126 5W battery charger aic1563 step up 1N4148
    Text: AIC1782 Dual-Battery Charge Controller n FEATURES l l l l l l l l l l l l n DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a


    Original     		PDF AIC1782 AIC1782 a1012 transistor D468 transistor transistor d468 d468 transistor A1012 thermistor RY 126 5W battery charger aic1563 step up 1N4148

    transistor D468 circuit diagram application

    Abstract: thermistor RY 126
    Text: AIC1782 Dual-Battery Charge Controller FEATURES DESCRIPTION Quick and Easy Testing for Production. Sequential Charging Control of Two NiMH/NiCd Battery Packs. Reliable Sequential Fast Charge Control of Dual NiMH and/or NiCd Battery Packs, even with a Fluctuating Charging Current.


    Original     		PDF AIC1782 transistor D468 circuit diagram application thermistor RY 126

    transistor D468 circuit diagram application

    Abstract: 4 pin battery charger laptop 12v transistor d468 a1012 transistor transistor A1012 78L05 voltage regulator pin configuration d468 3904 dual ATS diagram TL 78l05
    Text: SS6782G Charge Controller for Dual Batteries FEATURES DESCRIPTION Quick and easy testing for production. Sequential charging control of two NiMH/NiCd Battery Packs. Reliable sequential fast charge control of dual NiMH and/or NiCd Battery Packs, even with a fluctuating charging current.


    Original     		PDF SS6782G transistor D468 circuit diagram application 4 pin battery charger laptop 12v transistor d468 a1012 transistor transistor A1012 78L05 voltage regulator pin configuration d468 3904 dual ATS diagram TL 78l05

    siemens 3tb44

    Abstract: 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor
    Text: 3RT, 3RH, 3TB, 3TC, 3TH, 3TK Contactors for Special Applications Contactors with Extended Tolerance 0.7 . 1.25 x Us , for Railway Applications 3RT10 motor contactors, 5.5 . 45 kW DC operation • DC solenoid system Screw terminals For screw and snap-on mounting onto standard mounting rail


    Original     		PDF 3RT10 483-0B. 503-0B. 523-0B. 543-0B. 563-0B. 683-0D. 693-0D. 3TK19 siemens 3tb44 3tb52 SIEMENS 3TH 82 catalog for 3RT series contactor* siemens 3TH43 siemens 3th42 3TH42 siemens contactor IEC 60947 VDE 0660 3TB44 siemens magnetic contactor

    ecg semiconductors master replacement guide

    Abstract: ecg master replacement guide mkl b32110 siemens mkp B32650 c945 p 331 ks transistor IC,MASTER master replacement guide Kennlinie KTY 10-6 siemens b32110 A2005 transistor
    Text: Liebe Schuricht-Kunden, Ihre Zufriedenheit ist unser größtes Anliegen. Aus diesem Grunde versuchen wir, Ihnen Informationen und Ware stets zum richtigen Zeitpunkt verfügbar zu machen. Das gilt insbesondere auch für die Produkte der Siemens AG mit den drei


    Original     		PDF

    a1273 transistor DATA

    Abstract: a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270
    Text: 80C186EB/80C188EB Microprocessor User’s Manual 80C186EB/80C188EB Microprocessor User’s Manual February 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


    Original     		PDF 80C186EB/80C188EB sa-16 a1273 transistor DATA a1273 transistor a1273 transistor scheme transistor A1267 a1273 80188 Programmers Reference Manual A1266 transistor a1271 transistor A1273 transistor A1270

    transistor A1046

    Abstract: A1046 transistor TRANSISTOR A1048 A1048 transistor replacement of transistor A1006 transistor A1267 80C186 programming TRANSISTOR A1124 A1046 replacement parts for A1046 transistor
    Text: 80C186EA/80C188EA Microprocessor User’s Manual 80C186EA/80C188EA Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


    Original     		PDF 80C186EA/80C188EA transistor A1046 A1046 transistor TRANSISTOR A1048 A1048 transistor replacement of transistor A1006 transistor A1267 80C186 programming TRANSISTOR A1124 A1046 replacement parts for A1046 transistor

    A1306 TRANSISTOR

    Abstract: A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor
    Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Order Number 272047-003 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including


    Original     		PDF 80C186EC/80C188EC 82C59A Index-10 A1306 TRANSISTOR A1273 A1266 transistor a1266 a1273 transistor a1232 transistor A1267 transistor a1276 a1273 transistor scheme a1273 y transistor

    transistor A1011

    Abstract: a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267
    Text: 80C186EC/80C188EC Microprocessor User’s Manual 80C186EC/80C188EC Microprocessor User’s Manual 1995 Information in this document is provided solely to enable use of Intel products. Intel assumes no liability whatsoever, including infringement of any patent or copyright, for sale and use of Intel products except as provided in Intel’s Terms and Conditions


    Original     		PDF 80C186EC/80C188EC 82C59A Index-10 transistor A1011 a1273 transistor scheme A1266 a1273 a1273 transistor DATA a1273 transistor a1232 transistor a1266 A1306 TRANSISTOR transistor A1267

    transistor buz 36

    Abstract: A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A
    Text: IEMENS AKTIENGESELLSCHAF 03E D • 7 ^ 3*7-0/ ô23StQS QOlSbBS ö « S I E G Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancem ent types in plastic package TO-220 AB Typ Type ^DS max V A


    OCR Scan     		PDF 23StQS T0-220 O-220 BUZ10S2 Z72AL Z73AL O-218 transistor buz 36 A1301 transistor Z346 z309 A3206A A1306A z326 A1320A A1610-A2 Z22A

    A1306 TRANSISTOR

    Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor
    Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)


    OCR Scan     		PDF O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor

    j2y transistor

    Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
    Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,


    OCR Scan     		PDF O220AB O-126 j2y transistor T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497