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    TRANSISTOR A143 Search Results

    TRANSISTOR A143 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A143 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    c102 TRANSISTOR

    Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT


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    94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMX17 2SD1484K 500mA 96-523-D15) F04-C101) c102 TRANSISTOR c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor PDF

    a144* transistor

    Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
    Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT


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    94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) IMT17 2SA1036K 500mA 94S-366-A032) 96-427-C022) a144* transistor a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor PDF

    2-7D101A

    Abstract: 2SA1432 2SC3672 A1432 nixie tube driver 2sc367
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


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    2SA1432 2SC3672 2-7D101A 2SA1432 2SC3672 A1432 nixie tube driver 2sc367 PDF

    2SA1432

    Abstract: 2-7D101A 2SC3672 A1432
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


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    2SA1432 2SC3672 2SA1432 2-7D101A 2SC3672 A1432 PDF

    A-1432

    Abstract: 2SA1432
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


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    2SA1432 2SC3672 A-1432 2SA1432 PDF

    2SA1432

    Abstract: Display Nixie 2-7D101A 2SC3672 A1432
    Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V


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    2SA1432 2SC3672 2SA1432 Display Nixie 2-7D101A 2SC3672 A1432 PDF

    Transistor A1431

    Abstract: a1431 transistor
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


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    2SA1431 Transistor A1431 a1431 transistor PDF

    Transistor A1431

    Abstract: a1431 a1431 transistor 2-7D101A 2SA1431 A-1431
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


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    2SA1431 Transistor A1431 a1431 a1431 transistor 2-7D101A 2SA1431 A-1431 PDF

    Transistor A1431

    Abstract: a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A
    Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)


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    2SA1431 Transistor A1431 a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A PDF

    2-7D101A

    Abstract: 2SA1430 A1430
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    2SA1430 2-7D101A 2SA1430 A1430 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    2SA1430 PDF

    A1430

    Abstract: 2-7D101A 2SA1430
    Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)


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    2SA1430 A1430 2-7D101A 2SA1430 PDF

    C144* transistor

    Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
    Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N


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    FMG12 IMD14 96-417-C323T) 96-470-IMD14) 94S-389-A41) 94S-398-C41) FMG13 94S-849-A143T) 94S-877-C143T) UMA10N C144* transistor C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1 PDF

    c125t

    Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
    Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-


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    DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA 005-Lr DTA114TUA DTC343TS -50mA, f-100MHz 50/1A rat10 C343T) c125t Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK PDF

    a143es

    Abstract: No abstract text available
    Text: DTA143EM / DTA143EE / DTA143EUA DTA143EKA / DTA143ESA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143EM / DTA143EE / DTA143EUA / DTA143EKA / DTA143ESA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see


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    DTA143EM DTA143EE DTA143EUA DTA143EKA DTA143ESA -100mA a143es PDF

    A143ES

    Abstract: DTA143EUA A143E DTA143EE DTA143EKA DTA143EM DTA143ESA SC-72
    Text: DTA143EM / DTA143EE / DTA143EUA DTA143EKA / DTA143ESA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143EM / DTA143EE / DTA143EUA / DTA143EKA / DTA143ESA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see


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    DTA143EM DTA143EE DTA143EUA DTA143EKA DTA143ESA -100mA DTA143EUA A143ES A143E DTA143ESA SC-72 PDF

    a143z

    Abstract: A143ZS DTA143ZE DTA143ZKA DTA143ZM DTA143ZSA DTA143ZUA SC-72
    Text: DTA143ZM / DTA143ZE / DTA143ZUA DTA143ZKA / DTA143ZSA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143ZM / DTA143ZE / DTA143ZUA / DTA143ZKA / DTA143ZSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see


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    DTA143ZM DTA143ZE DTA143ZUA DTA143ZKA DTA143ZSA -100mA DTA143ZUA a143z A143ZS DTA143ZSA SC-72 PDF

    A143XS

    Abstract: DTA143XKA DTA143XM DTA143XSA DTA143XUA SC-72 T106 DTA143XE a143x
    Text: DTA143XM / DTA143XE / DTA143XUA DTA143XKA / DTA143XSA Transistors −100mA / −50V Digital transistors with built-in resistors DTA143XM / DTA143XE / DTA143XUA / DTA143XKA / DTA143XSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see


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    DTA143XM DTA143XE DTA143XUA DTA143XKA DTA143XSA -100mA DTA143XUA A143XS DTA143XSA SC-72 T106 a143x PDF

    OD232

    Abstract: W472-E1-07 CJ2M ARC M3D CJ1W-OD202 CJ1W-OD212 CJ1W-SCU31-V1 Sysmac CJ1M ID211 OD212 CJ1M A143* PNP switching transistor
    Text: Cat. No. W472-E1-07 SYSMAC CJ Series CJ2H-CPU6@-EIP CJ2H-CPU6@ CJ2M-CPU@@ CJ2 CPU Unit Hardware USER’S MANUAL  OMRON, 2008 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form, or


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    W472-E1-07 2356-81-300/Fax: 847-843-7900/Fax: 6835-3011/Fax: 21-5037-2222/Fax: OD232 W472-E1-07 CJ2M ARC M3D CJ1W-OD202 CJ1W-OD212 CJ1W-SCU31-V1 Sysmac CJ1M ID211 OD212 CJ1M A143* PNP switching transistor PDF

    mdu 2653

    Abstract: mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152
    Text: DATASHEET RapidChip Integrator Platform ASIC Family February 2005 Preliminary DB08-000237-03 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the


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    DB08-000237-03 DB08-000237-03, 1152-Ball mdu 2653 mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152 PDF

    t3d 66

    Abstract: T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906
    Text: A L L E GR O M I C R O S Y S T E M S INC T3D D • 0 S Q 4 3 3 A D D D 3 7 1 7 2 ■ ALGR PROCESS SMN Process SMN PNP High-Speed Switching Transistor Process SM N is a P N P double-diffused silicon epi­ taxial planar transistor with gold diffusion. It is pri­


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    0SGM33Ã G3717 050433fl 00371A t3d 66 T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906 PDF

    DTA143TA

    Abstract: No abstract text available
    Text: DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV h 7 > y ^ $ /T ra n s is to rs D TA 143TU /D TA 143TK /D TA 143TS D TA 143TF/D TA 143TL/D TA 143TA DTA 143TV |s -7 > y ^ < y -?-/Transistor Switch Digital Transistors Includes Resistors F ~7


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    DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV 143TU 143TK 143TS 143TF/D 143TL/D 143TA 143TV DTA143T DTA143TA PDF

    Untitled

    Abstract: No abstract text available
    Text: Transistors Digital transistors built-in resistors DTA143EE/DTA143EU A/DTA143EKA/ DTA143ECA/DTA143ESA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f a n in v e rte r c irc u it


    OCR Scan
    DTA143EE/DTA143EU /DTA143EKA/ DTA143ECA/DTA143ESA 0Dlb713 O-220FN O-220FN O220FP T0-220FP, O-220FP. 7020c PDF

    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


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    MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF