c102 TRANSISTOR
Abstract: c 548 c transistor C107 transistor digital c101 TRANSISTOR C124* transistor C114y C124E Transistors General a124* transistor C144E transistor
Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (dual transistors) IMX17 FFeatures 1) Two 2SD1484K chips in an SMT
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94S-389-A41)
94S-398-C41)
FMG13
94S-849-A143T)
94S-877-C143T)
IMX17
2SD1484K
500mA
96-523-D15)
F04-C101)
c102 TRANSISTOR
c 548 c transistor
C107 transistor digital
c101 TRANSISTOR
C124* transistor
C114y
C124E
Transistors General
a124* transistor
C144E transistor
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a144* transistor
Abstract: a124* transistor C144* transistor C124* transistor a114* transistor transistor a41 C124E Transistors General TRANSISTORS C144E transistor
Text: Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 94S-389-A41 (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors General purpose transistor (isolated dual transistors) IMT17 FFeatures 1) Two 2SA1036K chips in an SMT
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94S-389-A41)
94S-398-C41)
FMG13
94S-849-A143T)
94S-877-C143T)
IMT17
2SA1036K
500mA
94S-366-A032)
96-427-C022)
a144* transistor
a124* transistor
C144* transistor
C124* transistor
a114* transistor
transistor a41
C124E
Transistors General
TRANSISTORS
C144E transistor
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2-7D101A
Abstract: 2SA1432 2SC3672 A1432 nixie tube driver 2sc367
Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
2SC3672
2-7D101A
2SA1432
2SC3672
A1432
nixie tube driver
2sc367
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2SA1432
Abstract: 2-7D101A 2SC3672 A1432
Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
2SC3672
2SA1432
2-7D101A
2SC3672
A1432
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A-1432
Abstract: 2SA1432
Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
2SC3672
A-1432
2SA1432
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2SA1432
Abstract: Display Nixie 2-7D101A 2SC3672 A1432
Text: 2SA1432 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1432 High Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Unit: mm Cathode Ray Tube Brightness Control Applications • High voltage: VCBO = −300 V, VCEO = −300 V
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2SA1432
2SC3672
2SA1432
Display Nixie
2-7D101A
2SC3672
A1432
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Transistor A1431
Abstract: a1431 transistor
Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
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2SA1431
Transistor A1431
a1431 transistor
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Transistor A1431
Abstract: a1431 a1431 transistor 2-7D101A 2SA1431 A-1431
Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
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2SA1431
Transistor A1431
a1431
a1431 transistor
2-7D101A
2SA1431
A-1431
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Transistor A1431
Abstract: a1431 transistor A1431 2SA1431 transistor A1431 datasheets 2-7D101A
Text: 2SA1431 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A)
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2SA1431
Transistor A1431
a1431 transistor
A1431
2SA1431
transistor A1431 datasheets
2-7D101A
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2-7D101A
Abstract: 2SA1430 A1430
Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
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2SA1430
2-7D101A
2SA1430
A1430
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Untitled
Abstract: No abstract text available
Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
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2SA1430
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A1430
Abstract: 2-7D101A 2SA1430
Text: 2SA1430 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications • Unit: mm High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A)
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2SA1430
A1430
2-7D101A
2SA1430
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C144* transistor
Abstract: C144E transistor a144* transistor C114y c102 TRANSISTOR 96-415-C114E a114* transistor UMW10 c114e FMW1
Text: Transistors FMG12 IMD14 96-417-C323T (96-470-IMD14) 576 Transistors FMS3 / FMS4 / IMT4 FMW3 / FMW4 / IMX8 (94S-389-A41) (94S-398-C41) 578 Transistors IMB7A UMH7N / FMG13 / IMH7A (94S-849-A143T) (94S-877-C143T) 580 Transistors UMA10N / FMA10A / IMB17A UMG10N
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FMG12
IMD14
96-417-C323T)
96-470-IMD14)
94S-389-A41)
94S-398-C41)
FMG13
94S-849-A143T)
94S-877-C143T)
UMA10N
C144* transistor
C144E transistor
a144* transistor
C114y
c102 TRANSISTOR
96-415-C114E
a114* transistor
UMW10
c114e
FMW1
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c125t
Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-
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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA
005-Lr
DTA114TUA
DTC343TS
-50mA,
f-100MHz
50/1A
rat10
C343T)
c125t
Ho3 501 transistor
dtc323tu
94S-751-C343T
transistor PNP A124G
transistor KD 503
DTC343
kd 2902
kd 503 transistor
DTC143TK
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a143es
Abstract: No abstract text available
Text: DTA143EM / DTA143EE / DTA143EUA DTA143EKA / DTA143ESA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143EM / DTA143EE / DTA143EUA / DTA143EKA / DTA143ESA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
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DTA143EM
DTA143EE
DTA143EUA
DTA143EKA
DTA143ESA
-100mA
a143es
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A143ES
Abstract: DTA143EUA A143E DTA143EE DTA143EKA DTA143EM DTA143ESA SC-72
Text: DTA143EM / DTA143EE / DTA143EUA DTA143EKA / DTA143ESA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143EM / DTA143EE / DTA143EUA / DTA143EKA / DTA143ESA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
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DTA143EM
DTA143EE
DTA143EUA
DTA143EKA
DTA143ESA
-100mA
DTA143EUA
A143ES
A143E
DTA143ESA
SC-72
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a143z
Abstract: A143ZS DTA143ZE DTA143ZKA DTA143ZM DTA143ZSA DTA143ZUA SC-72
Text: DTA143ZM / DTA143ZE / DTA143ZUA DTA143ZKA / DTA143ZSA Transistors -100mA / -50V Digital transistors with built-in resistors DTA143ZM / DTA143ZE / DTA143ZUA / DTA143ZKA / DTA143ZSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
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DTA143ZM
DTA143ZE
DTA143ZUA
DTA143ZKA
DTA143ZSA
-100mA
DTA143ZUA
a143z
A143ZS
DTA143ZSA
SC-72
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A143XS
Abstract: DTA143XKA DTA143XM DTA143XSA DTA143XUA SC-72 T106 DTA143XE a143x
Text: DTA143XM / DTA143XE / DTA143XUA DTA143XKA / DTA143XSA Transistors −100mA / −50V Digital transistors with built-in resistors DTA143XM / DTA143XE / DTA143XUA / DTA143XKA / DTA143XSA zApplications Inverter, Interface, Driver zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see
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DTA143XM
DTA143XE
DTA143XUA
DTA143XKA
DTA143XSA
-100mA
DTA143XUA
A143XS
DTA143XSA
SC-72
T106
a143x
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OD232
Abstract: W472-E1-07 CJ2M ARC M3D CJ1W-OD202 CJ1W-OD212 CJ1W-SCU31-V1 Sysmac CJ1M ID211 OD212 CJ1M A143* PNP switching transistor
Text: Cat. No. W472-E1-07 SYSMAC CJ Series CJ2H-CPU6@-EIP CJ2H-CPU6@ CJ2M-CPU@@ CJ2 CPU Unit Hardware USER’S MANUAL OMRON, 2008 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form, or
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W472-E1-07
2356-81-300/Fax:
847-843-7900/Fax:
6835-3011/Fax:
21-5037-2222/Fax:
OD232
W472-E1-07
CJ2M
ARC M3D
CJ1W-OD202
CJ1W-OD212
CJ1W-SCU31-V1
Sysmac CJ1M ID211
OD212 CJ1M
A143* PNP switching transistor
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mdu 2653
Abstract: mdu 2654 BGA1152 transistor Arm 3055 equivalent Gigablaze serdes CMOS h27 j1 3003 RC1800 A207 resistor R10 J 2995 FC1152
Text: DATASHEET RapidChip Integrator Platform ASIC Family February 2005 Preliminary DB08-000237-03 This document is preliminary. As such, it contains data derived from functional simulations and performance estimates. LSI Logic has not verified either the
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DB08-000237-03
DB08-000237-03,
1152-Ball
mdu 2653
mdu 2654
BGA1152
transistor Arm 3055 equivalent
Gigablaze serdes CMOS
h27 j1 3003
RC1800
A207
resistor R10 J 2995
FC1152
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t3d 66
Abstract: T3D 22, ts 3110 TRANSISTOR T3D 55 T3D 85 T3d 22 T3D 65 T3D 45 t3d 18 2N3906
Text: A L L E GR O M I C R O S Y S T E M S INC T3D D • 0 S Q 4 3 3 A D D D 3 7 1 7 2 ■ ALGR PROCESS SMN Process SMN PNP High-Speed Switching Transistor Process SM N is a P N P double-diffused silicon epi taxial planar transistor with gold diffusion. It is pri
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0SGM33Ã
G3717
050433fl
00371A
t3d 66
T3D 22,
ts 3110 TRANSISTOR
T3D 55
T3D 85
T3d 22
T3D 65
T3D 45
t3d 18
2N3906
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DTA143TA
Abstract: No abstract text available
Text: DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV h 7 > y ^ $ /T ra n s is to rs D TA 143TU /D TA 143TK /D TA 143TS D TA 143TF/D TA 143TL/D TA 143TA DTA 143TV |s -7 > y ^ < y -?-/Transistor Switch Digital Transistors Includes Resistors F ~7
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DTA143TU/DTA143TK/DTA143TS/DTA143TF
DTA143TL/DTA143TA/DTA143TV
143TU
143TK
143TS
143TF/D
143TL/D
143TA
143TV
DTA143T
DTA143TA
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTA143EE/DTA143EU A/DTA143EKA/ DTA143ECA/DTA143ESA •F e a tu re s 1) • E x t e r n a l d im e n s io n s (U nits: m m ) B u ilt- in b ia s r e s is to r s e n a b le th e c o n fig u ra tio n o f a n in v e rte r c irc u it
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DTA143EE/DTA143EU
/DTA143EKA/
DTA143ECA/DTA143ESA
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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hep 154 silicon diode
Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This
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MY110B
Z0206
Z0208
Z0210
Z0211
Z0212
Z0214
Z0215
Z0217
Z0219
hep 154 silicon diode
zy 406 transistor
motorola HEP 801
hep 154 diode
hep R1751
triac zd 607
2sb337
RS5743.3
F82Z
hep 230 pnp
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