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    TRANSISTOR A1C Search Results

    TRANSISTOR A1C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR A1C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3904 transistor equivalent

    Abstract: MJE250 Iron Core Inductor
    Text: SECTION 9 APPENDICES APPENDIX I USING THE TWO TRANSISTOR ANALYSIS Equation 3 relates IA to IG, and note that as α1 + α2 = 1, IA goes to infinity. IA can be put in terms of IK and α’s as follows: DEFINITIONS: 5 Collector current 5 Base current 5 Collector leakage current


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    da5 diode

    Abstract: BC519 IPB048N06L IPP048N06L DA QG marking 1bc
    Text: IPP048N06L G IPB048N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J ,&, Y" ( 6 P   S ? @5A1C


    Original     		PDF IPP048N06L IPB048N06L da5 diode BC519 DA QG marking 1bc

    BC519

    Abstract: 81a diode
    Text: IPB070N06N G IPP070N06N G IPI070N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


    Original     		PDF IPB070N06N IPP070N06N IPI070N06N BC519 81a diode

    Diode Marking C.3

    Abstract: da5 diode DA5 marking 5411C
    Text: IPB070N06L G IPP070N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J .&/ Y" 0( 6 P   S ? @5A1C


    Original     		PDF IPB070N06L IPP070N06L Diode Marking C.3 da5 diode DA5 marking 5411C

    65A3

    Abstract: 5E DIODE marking c-9
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &  I9   P ' 3 81>>5< >? A=1<<5E5<


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 65A3 5E DIODE marking c-9

    DA5 diode

    Abstract: No abstract text available
    Text: IPB110N06L G IPP110N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J Y" /0 6 P   S ? @5A1C


    Original     		PDF IPB110N06L IPP110N06L DA5 diode

    Untitled

    Abstract: No abstract text available
    Text: IPB090N06N3 G IPP093N06N3 G Id\Q  3 Power-Transistor Product Summary Features P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ & V 9H .( J R ,?>=1G฀,& 1 Y I9 -(


    Original     		PDF IPB090N06N3 IPP093N06N3 381A75à A53C96931C9? A1C54 C1A75Cà 931C9? C85AF9B5à

    Untitled

    Abstract: No abstract text available
    Text: IPB037N06N3 G Id\Q IPI040N06N3 G IPP040N06N3 G  3 Power-Transistor Product Summary Features V 9H . J P฀6?A฀BH>3 ฀A53C96931C9?>฀4A9E5B฀1>4฀43 43฀,& , R ,?>=1G฀,& +&/ Y P฀G35<<5>C฀71C5฀381A75฀G฀R 9H"[Z#฀@A?4D3C฀ (&


    Original     		PDF IPB037N06N3 IPI040N06N3 IPP040N06N3 A53C96931C9? 381A75à A1C54 C1A75Cà 931C9?

    DA QG

    Abstract: No abstract text available
    Text: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C


    Original     		PDF IPB065N06L IPP065N06L DA QG

    IPP093N06N3G

    Abstract: No abstract text available
    Text: IPB090N06N3 G IPP093N06N3 G Id\Q "%&$!"# 3 Power-Transistor Product Summary Features V 9H P 6? ABH>3 A53 C96931C9? > 4A9E5B1>4 43 43 ,& , R  , ? >=1G, & P  G3 5<<5>C71C5 3 81A75 GR 9H"[Z# @A? 4D3 C &    I9 .( J 1 Y" -( 6 P. 5AH <? F ? > A5B9BC1>3 5 R 9H"[Z#


    Original     		PDF IPB090N06N3 IPP093N06N3 IPP093N06N3G

    5411C

    Abstract: da5 diode BC519 58a4
    Text: IPB080N06N G IPP080N06N G "%&$!"# Power-Transistor Product Summary Features V 9H P & ? F 71C 5 3 81A75 6? A61BCBF9C 3 89 >7 1@@<9 3 1C 9? >B R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C >? A=1<<5E5<  E5AB9 ?> I9 .( J /&/ Y" 0( 6 P   S ? @5A1C 9>7 C


    Original     		PDF IPB080N06N IPP080N06N 5411C da5 diode BC519 58a4

    IPB085N06L

    Abstract: da5 diode marking 4rt IPB085N06L G
    Text: IPB085N06L G IPP085N06L G "%&$!"# Power-Transistor Product Summary Features V 9H P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > R  , ? >=1G , ' P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5<  E5AB9 ?> I9 .( J 0&* Y" 0( 6 P   S ? @5A1C


    Original     		PDF IPB085N06L IPP085N06L da5 diode marking 4rt IPB085N06L G

    AN4502

    Abstract: AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421
    Text: GP200MLS12 GP200MLS12 IGBT Chopper Module Preliminary Information DS5421-1.5 April 2001 FEATURES • Internally Configured With Lower Arm Controlled ■ Non Punch Through Silicon ■ Isolated Copper Baseplate ■ Low Inductance Internal Construction KEY PARAMETERS


    Original     		PDF GP200MLS12 DS5421-1 AN4502 AN4503 AN4505 AN4506 GP200MLS12 IGBT 200A 1200V application induction heating DS5421

    Untitled

    Abstract: No abstract text available
    Text: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade


    OCR Scan     		PDF b3b72S4 2C6193HV

    TC518128

    Abstract: 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263
    Text: TOSHIBA TC518128BPiyBFiyBFWiyBFIlr70V/æV/10V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power


    OCR Scan     		PDF TC518128BPiyBFiyBFWiyBFIlr70V/ TC518128B-V TC518128BPL/BFL/BFWL/BFTL-70V/80V/1OV TC518128 518128 TC518128bfl tc518128bftl 80D-80 TC518128B TC518128bfwl A8263

    BF993

    Abstract: 1S marking transistor transistor bc 132
    Text: TELEFUNKEN ELECTRONIC A1C D ¥i Li(FyMKIKl electronic Creative Technologies • AT20{nb 0005577 BF 993 Marked with: ME - T -31 -=25 N-Channel Dual Gate MOS*Fieldeffect Tetrode •Depletion Mode Applications: Input- and Mlxerstages especially for FM- and VHF TV-tuners up to 300 MHz


    OCR Scan     		PDF 569-GS BF993 1S marking transistor transistor bc 132

    a14 Transistor

    Abstract: No abstract text available
    Text: TEXAS XNSTR QbE D | 011.1751 0075454 5 | SM61CD64, SMJ61CD64 65.536-W0RD BY 1-BIT STATIC RAMS Separate I/O J D PA C K A G E TOP VIEW AOC A1C A2C A3Q A4Q A5Q A6^ Military Temperature Range . . . -5 5 ° C to 125°C (M Suffix) • • Fast Static Operation


    OCR Scan     		PDF SM61CD64, SMJ61CD64 536-W0RD 61CD64-30 61CD64-40 61CD64-55 536-bit a14 Transistor

    relay Re 04501

    Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
    Text: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997


    OCR Scan     		PDF ENGI86 4970A E1199 relay Re 04501 JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031

    MB7100

    Abstract: MB7152
    Text: October 1989 Edition 2.0 FUJITSU DATA SHEET MB7152Y/H/E SCHOTTKY 16K-BIT PROM SCHOTTKY 16,3 8 4 -B IT DEAP PROM 4096 W ORDS X 4 BITS The Fujitsu MB7152 is high speed schottkyTTL electrically field programmable read only memory organized as 4096 words by 8 bits. With threestate outputs, memory expansion is simple.


    OCR Scan     		PDF MB7152Y/H/E 16K-BIT MB7152 125mA MB7152 MB7100

    2N3303

    Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
    Text: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any


    OCR Scan     		PDF Chiana56 2N3303 T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175

    ultrasonic piezo speaker

    Abstract: UM66 ultrasonic receiver Single melody generator UM66* melody generator UM66T ultrasonic piezo UM66 melody generator ultrasonic remote control encoder decoder UM66T Series
    Text: UNITE» MICROELECTRONICS U M 6 6 T S e r íe s 3DE D 'iBESflSE 00DD2S1 3 Simple Melody Generator Features Pin Configuration • 62-note ROM memory 1 ■ 1.3V to 3.3V operating voltage and low power con­ UM66 T xxx 85xx sumption ■ Dynamic speaker can be driven w ith an external NPN


    OCR Scan     		PDF UM66T 62-note UM37SO ultrasonic piezo speaker UM66 ultrasonic receiver Single melody generator UM66* melody generator ultrasonic piezo UM66 melody generator ultrasonic remote control encoder decoder UM66T Series

    MBM27C64-30

    Abstract: MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64 MBM27C64
    Text: October 1992 Edition 2.0 FUJITSU DATA SHEET MBM27C64-20/-25/-30 CMOS 64K-BIT UV EPROM CMOS 65,536-BIT UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY The Fujitsu MBM27C64 is a high speed 65,536-bit static complementary MOS erasable and electrically reprogrammable read only memory EPROM . It is especially well suited for


    OCR Scan     		PDF MBM27C64-20/-25/-30 64K-BIT 536-BIT MBM27C64 28-pin 32-pad MBM27C64. JV0098-92XJ1 MBM27C64-30 MBM27C64-20 MBM27C64-25 Fujitsu MBM27C64

    2n3773 power Amplifier circuit diagrams

    Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
    Text: RCA Power Devices This DATABOOK contains com­ plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete


    OCR Scan     		PDF AN-6671 G4000) G4000 2n3773 power Amplifier circuit diagrams SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U

    BECKMAN helipot

    Abstract: Helipot Allen-Bradley CARBON COMP RESISTORS CS4725 1901-0040 dm74ls173n ITT TCA 700 Y 1854-0221 CB2225 B 1820-1199
    Text: M odel 5004A Replaceable Parts SE CTIO N VI REPLACEABLE PARTS 6-1. INTRODUCTION 6 -2 . This section contains in fo rm a tio n fo r o rd e rin g re p la c e m e n t parts. Table 6 -1 lists parts in alp h an u m erical o rd e r o f th e ir re fe re n c e designators and indicates th e d escription and HP Part


    OCR Scan     		PDF