transistor equivalent book FOR D 1047
Abstract: MDA770 PBR951,215 Mouser 1998 Transistor B 1566 MCC 90-16
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR951 UHF wideband transistor Product specification Supersedes data of 1998 Jun 09 File under Discrete Semiconductors, SC14 1998 Aug 10 Philips Semiconductors Product specification UHF wideband transistor
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M3D088
PBR951
PBR951
SCA60
125104/1200/05/pp16
771-PBR951-T/R
transistor equivalent book FOR D 1047
MDA770
PBR951,215
Mouser 1998
Transistor B 1566
MCC 90-16
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358 SMD transistor
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLT80 UHF power transistor Product specification Supersedes data of May 1992 1996 May 09 Philips Semiconductors Product specification UHF power transistor BLT80 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability.
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BLT80
BLT80
OT223
MAM043
cir2724825
SCDS48
127061/1200/02/pp12
771-BLT80-T/R
358 SMD transistor
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771-BUK7215-55A118
Abstract: No abstract text available
Text: DP AK BUK7215-55A N-channel TrenchMOS standard level FET Rev. 02 — 27 January 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to
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BUK7215-55A
771-BUK7215-55A118
BUK7215-55A
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F2213
Abstract: No abstract text available
Text: polyfet rf devices F2213 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base
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F2213
F2213
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FPD1500
Abstract: SSG 23 TRANSISTOR stu 407 BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 135 TRANSISTOR BC 157 FPD1500DFN FPD750SOT89 InGaAs hemt biasing EB1500DFN-BE
Text: FPD1500DFN FPD1500DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT Package: 2mmx2mm DFN Product Description Features The FPD1500DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a
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FPD1500DFN
FPD1500DFN
mx750
27dBm
85GHz
42dBm
85GHz)
EB1500DFN-BA
FPD1500
SSG 23 TRANSISTOR
stu 407
BC 148 TRANSISTOR DATASHEET
TRANSISTOR BC 135
TRANSISTOR BC 157
FPD750SOT89
InGaAs hemt biasing
EB1500DFN-BE
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HX8353D
Abstract: hx835 HX8353-D 8128160TFCTXI HX83 lcd 2 x 8 led circuit diagram HX8353
Text: NHD-1.8-128160TF-CTXI# TFT Thin-Film Transistor Liquid Crystal Display Module NHD1.8128160TFCTXI#- Newhaven Display 1.8” diagonal 128 x 160 pixels (portrait mode) Model Built-in Controller White LED backlight Transmissive TFT Wide Temp (-20C to +70C), 12:00 view direction
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8-128160TF-CTXI#
8128160TFCTXI
240hrs
240hrs
10-55Hz
150pF
HX8353D
hx835
HX8353-D
HX83
lcd 2 x 8
led circuit diagram
HX8353
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PDF
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Transistor BFR 97
Abstract: Transistor BFR 39 transistor npn d 2058 Transistor BFR 35 Transistor BFR 98 Transistor BFR 38 Transistor BFR 80 Transistor BFR 91 K 2056 transistor Transistor BFR 79
Text: 2SC D • fl23SbOS Q0QMb74 T H S I E G NPN Silicon Transistor for Low-Noise RF Broadband Amplifiers and High-Speed Switching Applications BFR 35 A BFR 35 AR 0 '7 Z3 I - / S 2 N 6619 SIEMENS AKTIENGESELLSCHAF ’4 BFR 35 A is an epitaxial NPN silicon planar RF transistor in TO 2 3 6 plastic package
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fl23SbOS
Q0QMb74
2N6619,
023SbOS
00G4b77
BFR35A
2N6619
Transistor BFR 97
Transistor BFR 39
transistor npn d 2058
Transistor BFR 35
Transistor BFR 98
Transistor BFR 38
Transistor BFR 80
Transistor BFR 91
K 2056 transistor
Transistor BFR 79
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2N5332
Abstract: No abstract text available
Text: TYPE 2N5332 P-N-P SILICON TRANSISTOR BU LL E T IN NO. DL-S 6810830, SEP T EM BE R 1968 RADIATION-TOLERANT TRANSISTOR FOR SWITCHING AND GENERAL PURPOSE VHF-UHF AMPLIFIER APPLICATIONS • Guaranteed lCBo , hFE, and after 1x1 O'5 Fast Neutrons/cm2 V CE<ut • Complément to N-P-N type 2N5399
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2N5332
2N5399
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PDF
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TIS126
Abstract: No abstract text available
Text: TYPE TIS126 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L -S 7 3 1 1 9 9 2 , M A R C H 1 9 7 3 HIGH-FREQUENCY SiLECTt TRANSISTOR* FOR USE IN VHF MIXERS AND NON-AGC IF AMPLIFIERS • High fT • • • 600 MHz Min • Specified fT vs I q Characteristic
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TIS126
100-Mil
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Untitled
Abstract: No abstract text available
Text: TOSHIBA PHOTOCOUPLER SEMICONDUCTOR TO SH IB A TECHNICAL TLP371, TLP372 DATA GaAs IRED & PHOTO-TRANSISTOR TLP371 OFFICE MACHINE HOUSEHOLD USE EQUIPMENT TELECOM M UNICATION SOLID STATE RELAY PROGRAMMABLE CONTROLLERS The TOSHIBA TLP371 and TLP372 consists of a gallium arsenide
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TLP371,
TLP372
TLP371)
TLP371
TLP372
5000Vrms
UL1577,
E67349
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PDF
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OM6512SC
Abstract: OM6513SC
Text: OM6512SC OM6513SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Isolated Hermetic Metal Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off
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OM6512SC
OM6513SC
O-258AA
MIL-S-19500,
OM6513SC
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93P NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. £ CECC-type available: C E C C 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1051
OT-23
a23SbQS
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PDF
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BFR90
Abstract: No abstract text available
Text: SIEMENS NPN Silicon RF Transistor BFR 90 • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 90 BFR 90 Q62702-F560 Pin Configuration
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Q62702-F560
flB35b05
BFR90
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 599 NPN Silicon RF Transistor • Common emitter IF/RF amplifier • Low feedback capacitance due to shield diffusion Type Marking Ordering Code tape and reel BF 599 NB Q62702-F979 Pin Configuration 2 1 3 E B Package1) SOT-23 C Maximum Ratings
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Q62702-F979
OT-23
EHT07072
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PDF
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AF MARKING CODE sot-25
Abstract: sot-25 marking AF
Text: 13ÌTO K O TK702xx 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 8 (¿A Typ) Low Dropout Voltage (30 mV Typ) Very Small Surface Mount Package (SOT-25)
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OT-25)
TK702xx
TK702xx
IC-136-TK70203
AF MARKING CODE sot-25
sot-25 marking AF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SK2497 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N CHANNEL SINGLE GATE MODULATION DOPE TYPE 2SK2497 SHF BAND LOW NOISE AMPLIFIER APPLICATIONS. • Low Noise Figure : NF = 1.2dB f=12GHz • High Gain Unit in mm 2.16 ± 0.2 1.1 1.1 : Ga = 10dB (f=12GHz)
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2SK2497
12GHz)
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PDF
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Untitled
Abstract: No abstract text available
Text: CIRCUIT TYPE SN72400 VOLTAGE REGULATOR LINEAR INTEGRATED CIRCU ITS 200-m A Load Current w ithout External Power Transistor P L U G -IN P A C K A G E TO P V IE W Remote Shutdown Control Adjustable Short-Circuit Current Lim iter Input Voltages to 4 0 Volts
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SN72400
200-mA
SN72400
200-milliampere
7s222
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PDF
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2N4300
Abstract: No abstract text available
Text: TYPE 2N4300 N-P-N EPITAXIAL PLANAR SILICON POWER TRANSISTOR • TYPE 2N4300 BULLETIN NO. DL-S 668562, FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS 15 W at 100°C Cose Temperature • Max VtE jat of 0.3 V at 1 A l ( • Typ t enof 130 ns at 1 A lc
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2N4300
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2SK945
Abstract: 2SK9
Text: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)
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2SK945
2SK945
2SK9
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2n5549
Abstract: No abstract text available
Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit
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2N5549
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Untitled
Abstract: No abstract text available
Text: SILICON STABISTOR DIODE B U L L E T IN I NO. D L -S 7311937, M A R C H 1973 F O R S T A B IS T O R A P P L IC A T IO N S I I • Meter Protectors • Signal Limiters • Temperature Sensors • Voltage Stabilizers • Transistor Biasing • Logarithmic Attenuators
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7S222
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NE32584C-T1
Abstract: nec 3435 transistor am 4428
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.
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NE32584C
NE32584C-T1A
NE32584C-T1
nec 3435 transistor
am 4428
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2N119
Abstract: No abstract text available
Text: TYPE 2N119 N-P-N GROWN-JUNCTION SILICON TRANSISTOR B U L L E T I N NO. D L -S 58899, M A R C H 1958 36 to 8 6 beta spread Specifically designed for high gain at high temperatures m echanical d a ta Welded case with glass-to-metal hermetic seal between case and leads. Approximate weight is 1.7 grains.
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2N119
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