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    TRANSISTOR AMPLIFIER WIDEBAND Search Results

    TRANSISTOR AMPLIFIER WIDEBAND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    OPA691IDBVT Texas Instruments Wideband Current Feedback Operational Amplifier with Disable 6-SOT-23 -40 to 85 Visit Texas Instruments Buy
    THS4601IDDAG3 Texas Instruments Wideband, FET-Input Operational Amplifier 8-SO PowerPAD -40 to 85 Visit Texas Instruments Buy

    TRANSISTOR AMPLIFIER WIDEBAND Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips ferroxcube 4c6

    Abstract: Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703
    Text: APPLICATION NOTE A wideband power amplifier 25 − 110 MHz with the MOS transistor BLF245 NCO8602 Philips Semiconductors A wideband power amplifier (25 − 110 MHz) with the MOS transistor BLF245 CONTENTS 1 SUMMARY 2 INTRODUCTION 3 DESIGN OF THE AMPLIFIER


    Original     		PDF BLF245 NCO8602 SCA57 philips ferroxcube 4c6 Philips Application Note ECO6907 Design of H.F. Wideband Power Transformers ferroxcube 4C6 toroid core philips toroid 4c6 ECO6907 4C6 toroid NCO8602 4c6 philips 14 x 9 x 5mm ECO7703

    transistor T04

    Abstract: SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ THM2004J TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz transistor T04 SiGe HBT GAIN BLOCK MMIC AMPLIFIER TRANSISTOR 30GHZ TRANSISTOR C 608 Germanium Amplifier Circuit diagram Tachyonics

    Buffer Amplifier Ghz

    Abstract: THM2004J
    Text: PRELIMINARY THM2004J Wideband Linear Amplifier SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2004J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2004J THM2004J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Buffer Amplifier Ghz

    THM2003J

    Abstract: Tachyonics
    Text: PRELIMINARY Wideband Linear Amplifier THM2003J SiGe HBT MMIC Wideband Linear Amplifier Descriptions THM2003J is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF THM2003J THM2003J 50-ohm TAHB09) 30GHz 1000MHz 100MHz Tachyonics

    Untitled

    Abstract: No abstract text available
    Text: RF Amplifier Design Using HFA3046, HFA3096, HFA3127, HFA3128 Transistor Arrays Application Note November 1996 Introduction [ /Title AN93 15.1 /Subject (RF Amplifier Design Using HFA30 46, HFA30 96, HFA31 27, HFA31 28 Transistor Arrays ) /Autho r () /Keywords


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 AN9315 HFA30 HFA31 HFA3046/3096/3127/3128

    222259116641

    Abstract: 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module BLV859
    Text: APPLICATION NOTE BLV859 UHF linear push-pull power transistor AN98013 Philips Semiconductors BLV859 UHF linear push-pull power transistor CONTENTS 1 ABSTRACT 2 INTRODUCTION 2.1 Amplifier Electrical design objectives 3 DESIGN OF THE AMPLIFIER 3.1 3.2 3.3 3.4


    Original     		PDF BLV859 AN98013 SCA57 222259116641 222259016629 bvc62 AN98013 BD139 transistor circuit diagram BLV589 c38 transistor RG4M UHF amplifier module

    9635

    Abstract: sige hbt TARF2201 wideband linear amplifier Tx SiGe MMIC
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2201 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2201 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2201 50-ohm TAHB09) 30GHz TARF2201 12dBm 900MHz OT343 9635 sige hbt wideband linear amplifier Tx SiGe MMIC

    9829 A

    Abstract: TARF2202 .7E8
    Text: SiGe HBT MMIC Wideband Linear Amplifier TARF2202 SiGe HBT MMIC Wideband Linear Amplifier Descriptions TARF 2202 is a high performance cascadeable 50-ohm amplifier. This RFIC uses the latest Silicon Germanium Hetero Junction Bipolar Transistor TAHB09 process of Tachyonics Co.,


    Original     		PDF TARF2202 50-ohm TAHB09) 30GHz TARF2202 1900MHz 100MHz 9829 A .7E8

    Untitled

    Abstract: No abstract text available
    Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7


    Original     		PDF ENN4668 2SA1723 2009B 2SA1723] 300mA) O-126

    2SA1723

    Abstract: ITR04378 ITR04379 ITR04380 ITR04381 ITR04382
    Text: Ordering number:ENN4668 PNP Epitaxial Planar Silicon Transistor 2SA1723 High-Frequency Amplifier, Medium-Power Amplifier Applications Applications Package Dimensions • Wideband amplifiers. · High-frequency drivers. unit:mm 2009B [2SA1723] Features 8.0 2.7


    Original     		PDF ENN4668 2SA1723 2009B 2SA1723] 300mA) O-126 2SA1723 ITR04378 ITR04379 ITR04380 ITR04381 ITR04382

    2N5109UB

    Abstract: 19500/453 2N5109UBJ 2N5109UBJS 2N5109UBJX
    Text: 2N5109UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109UBJ


    Original     		PDF 2N5109UB MIL-PRF-19500 2N5109UBJ) 2N5109UBJX) 2N5109UBJV) 2N5109UBJS) MIL-STD-750 MIL-PRF-19500/453 -10dB 2N5109UB 19500/453 2N5109UBJ 2N5109UBJS 2N5109UBJX

    JANTX 2N5109

    Abstract: 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


    Original     		PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N5109 2N5109J 2N5109JS 2N5109JV 2N5109JX

    JANTX 2N5109

    Abstract: No abstract text available
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


    Original     		PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109

    JANTX 2N5109

    Abstract: 2N510
    Text: 2N5109 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • VHF-UHF amplifier transistor • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5109J


    Original     		PDF 2N5109 MIL-PRF-19500 2N5109J) 2N5109JX) 2N5109JV) 2N5109JS) MIL-STD-750 MIL-PRF-19500/453 -10dB JANTX 2N5109 2N510

    DIE CHIP 51 FET

    Abstract: No abstract text available
    Text: EC4790 Wide Band Power FET GaAs Field Effect Transistor Description The EC4790 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz Individual via hole connection is made


    Original     		PDF EC4790 EC4790 18GHz 23dBm 26dBm DSEC47907003 DIE CHIP 51 FET

    Philips 2222 050 capacitor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		PDF BFG135 OT223 MSB002 OT223. 711062b 110fi2b 711Da2b Philips 2222 050 capacitor

    BFG135 power amplifier for 900Mhz

    Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


    OCR Scan     		PDF BFG135 OT223 711Qfl2ti 7110fl2b BFG135 BFG135 power amplifier for 900Mhz BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		PDF BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570

    BFG35 amplifier

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


    OCR Scan     		PDF OT223 I3FG55. BFG35 OT223. MBB364 BFG35 amplifier

    npn 2222 transistor

    Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


    OCR Scan     		PDF BFG198 OT223 7110fl2b MSA035 OT223. npn 2222 transistor BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851

    2N6439

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal output amplifier stages in the 225 to 400 MHz frequency range. • Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc


    OCR Scan     		PDF 2N6439

    philips 22 ah 590

    Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


    OCR Scan     		PDF BFG198 OT223 7110fl2b MSA035 OT223. 711002b philips 22 ah 590 npn 2222 transistor 629 08103 TRANSISTOR FQ Philips 2222 032

    transistor zg

    Abstract: F689K BF689 zg transistor
    Text: Philips Semiconductors Product specification NPN 2 GHz wideband transistor DESCRIPTION BF689K PINNING NPN transistor in a plastic SOT54 TO-92 variant envelope. It is intended for application as an amplifier or oscillator in the VHF and UHF range. PIN DESCRIPTION


    OCR Scan     		PDF BF689K F689K SB034 transistor zg BF689 zg transistor

    Untitled

    Abstract: No abstract text available
    Text: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features


    OCR Scan     		PDF BFG35 OT223 BFG55.