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    TRANSISTOR B36 Search Results

    TRANSISTOR B36 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B36 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


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    PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    Untitled

    Abstract: No abstract text available
    Text: MP3393 8-String Step-Up White LED Driver with External Transistor The Future of Analog IC Technology DESCRIPTION FEATURES The MP3393 is a step-up controller with 8 current channel sources designed to power WLED backlights for large LCD panels. • • •


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    PDF MP3393 MP3393 202mV MP3393â SOIC28

    IF3601

    Abstract: 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320
    Text: Databook.fxp 1/13/99 2:09 PM Page B-24 B-24 01/99 2N6449, 2N6450 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ High Voltage Reverse Gate Source Voltage Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N6449, 2N6450 2N6449 IF3601 2N6449 2N6450 IF9030 interfet B-28 IF140 IF140A IF142 IF1320

    rp110n261

    Abstract: RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5
    Text: RP110x SERIES 150mA Low Supply Current LDO REGULATOR NO.EA-239-131023 OUTLINE The RP110x Series is a voltage regulator LDO IC, which has been developed using the CMOS process technology, with high output voltage accuracy, ultra-low supply current, and low ON-resistance transistor. The IC


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    PDF RP110x 150mA EA-239-131023 Room403, Room109, 10F-1, rp110n261 RP110L161D RP110N151B RP110N081B RP110N141C RP110N171D RP110L121C5

    2N6449

    Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
    Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current


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    PDF 2N3821, 2N3822 2N3821 2N6449 MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116

    IF4500

    Abstract: Transistor B36 NJ450L
    Text: Databook.fxp 1/14/99 1:51 PM Page B-36 B-36 01/99 IF4500 N-Channel Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier At 25°C free air temperature: Absolute maximum ratings at TA = 25¡C Reverse Gate Source & Reverse Gate Drain Voltage


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    PDF IF4500 NJ450L 236AB IF4500 Transistor B36 NJ450L

    AP1512A

    Abstract: No abstract text available
    Text: OBSOLETE AP1512/A 50KHz, 2A/3A PWM BUCK DC/DC CONVERTER General Description Features • • • • • • • • • • • The AP1512/A is a monolithic IC designed for use as a step-down DC/DC converter with the ability of driving a 2A 3A for AP1512A load without additional transistor components. The


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    PDF AP1512/A 50KHz, AP1512/A AP1512A) DS31093 AP1512A

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


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    PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    MB4213

    Abstract: F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD
    Text: Table of Contents Index 5 SMD Transistors Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal Darlington Transistors


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    PDF SSIP-12 KIA6283K KIA7217AP SSIP-10 KIA6240K KIA6801K KIA6901P/F MB4213 F10P048 mn1280 mb4213 equivalent smd transistor zaa diode zener ZD 15 ic mb4213 transistor 2AX SMD 252 B34 SMD ZENER DIODE bc237 equivalent SMD

    KF6N60

    Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
    Text: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION


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    PDF USFB053 USFB13 USFB13A USFB13L USFB14 USFZ10V USFZ11V USFZ12V USFZ13V USFZ15V KF6N60 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05

    transistor WL 431

    Abstract: S M R2632 transistor substitution chart SMD IC TL 431 saw resonator r2632 R2632 CR2031 R2632 resonator saw Colpitts circuit design A65 SMD
    Text: National Semiconductor Application Note 1021 December 1995 INTRODUCTION In the recent years short range unlicensed RF links have become very popular for a wide variety of applications in the field of remote control data exchange keyless entry systems and others The most popular frequency in Europe for


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    up/xr+2320

    Abstract: No abstract text available
    Text: Product specification Philips Semiconductors BFG93AW BFG93AW/X; BFG93AW/XR NPN 7 GHz wideband transistor MARKING FEATURES • High power gain TYPE NUMBER • Low noise figure BFG93AW R8 • Gold metallization ensures excellent reliability. BFG93AW/X R9 BFG93AW/XR


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    PDF BFG93AW BFG93AW/X; BFG93AW/XR BFG93AW/X OT343 OT343R MSB014 up/xr+2320

    3TE445

    Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
    Text: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group


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    PDF FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159

    MBB464

    Abstract: MBB081 BF545B TRANSISTOR BR BF545A BF545C MSB003 m67 transistor transistor 313 sot23 B3E MARKING SOT23-6
    Text: Philips Semiconductors bbS3T24 G072blG M57 N-channel silicon junction field-effect transistor • S I C 3 ^_^£oductspecif|catlon BF545A; BF545B; BF545C napc/philips s e m c o n j FE A T U R E S b3E T> Q UICK R E F E R E N C E DATA • Low leakage level typ. 500 fA


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    PDF bbS3T24 G072blG BF545A) BF545A; BF545B; BF545C BF545A BF545B MBB470 S31E4 MBB464 MBB081 BF545B TRANSISTOR BR BF545A BF545C MSB003 m67 transistor transistor 313 sot23 B3E MARKING SOT23-6

    150eu

    Abstract: No abstract text available
    Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s "jT • High Power Switching • AC ^ —


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    PDF ETN85-O5O 12Sl-t 095t/R89 150eu

    zener diode zx 200

    Abstract: No abstract text available
    Text: 1DI400MP-120 400A '< * 7 - : Outline Drawings h = ? > $ > * ? - POWER TRANSISTOR MODULE • Features • h F E *''rtjl' High DC C urren t Gain : Applications • 9 General Purpose Inverter • U n in te rru p tib le P ow er S u pp ly • N Servo & S pindle Drive fo r NC M achine T ools


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    PDF 1DI400MP-120 l95t/R89 zener diode zx 200

    DIODE B36

    Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
    Text: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —


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    PDF ETN85-O5O E82988 19S24^ 095t/R89 DIODE B36 ml25 M104 T151 Transistor B36

    Transistor B36

    Abstract: No abstract text available
    Text: Whnl h e w le t t mina P A C K A R D 4.8 V NPN Common Em itter Output Power Transistor for AMPS, ETACS Phones Technical Data AT-33225 Features • 4.8 Volt Operation • +31.0 dBm Pon : @ 900 MHz, Typ. • 70% Collector Efficiency @ 900 MHz, Typ. • 9 dB Power Gain @ 900 MHz,


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    PDF AT-33225 OT-223 AT-332 AT-33225 Transistor B36

    1DI400MP-120

    Abstract: M117 S30S3 PC3000 IS280 Zener diode itt 150 V M430G TRANSISTOR 3FT 81 1di400 XMJA
    Text: 1 D I 4 ' < 7 “ M P - 1 2 I 4 A : Outline Drawings h = 7 > i> 7 ,^ ^ :^ = L - ) V POWER TRANSISTOR MODULE • 4 $ ^ : F e • hFEA ''itjl' t u r e . i 3 . 10 s High DC C u rre n t Gain : • a 11 A p p l i c a t i o n s General Purpose Inverter > '< — fi


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    PDF 1DI400MP-120 E82988 S30S3^ 11S19# I95t/R89 ShI50 M117 S30S3 PC3000 IS280 Zener diode itt 150 V M430G TRANSISTOR 3FT 81 1di400 XMJA

    zener diode mv 5T

    Abstract: J32C j32-C E82988 sf p151 1DI400MN-120 M118 P151
    Text: 1 D I 4 0 0 M N - 1 2 0 4 0 0 A /< > 7 _ f- v X ^ i : Outline Draw ings a . — JU POWER TRANSISTOR MODULE : j V i ‘T ” .v F e a tu re s • hFE*'”^ ' High DC Current Gain 'i'. ¡5. • ffla fs /,M* : A p p lic a tio n s • tfL R 'f > '< — ? General Purpose Inverter


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    PDF 1DI400MN-120 E82988 I95t/R89) zener diode mv 5T J32C j32-C sf p151 M118 P151

    Untitled

    Abstract: No abstract text available
    Text: 1 D I4 0 0 M /< > 7 _ f- v X ^ N - i 1 2 0 4 0 0 A a . — JU : Outline Draw ings POWER TRANSISTOR MODULE : j V i ‘T ” .v F e a tu re s • hFE*'”^ ' High DC Current Gain 'i'. ¡5. • ffla fs /,M* : A p p lic a tio n s • tfL R 'f > '< — ? General Purpose Inverter


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    B3604

    Abstract: No abstract text available
    Text: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


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    PDF MB3604 B3604 DIP-16P-M04 D-6000 PV0014-904A2

    transistor ck 112

    Abstract: MB3604 B3604
    Text: FU JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I MB3604 1 1 December 1987 Edition 1.0 HIGH FR EQUENCY O PE R A TIO N A L A M P L IFIE R T h e Fu jitsu M B3604 is a m onolithic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.


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    PDF MB3604 B3604 B3604 16-LEAD DIP-16P-M04) transistor ck 112 MB3604

    rca thyristor manual

    Abstract: diode lt 341 1W1000 RG35A "RCA Solid State thyristor
    Text: B3612 PROGRAMMABLE OVERVOLTAGE PROTECTOR FOR ERICSSON COMPONENTS 3357/3 DCLIC D ECEM BER 1995 - B 6V IS6 0 SfiPfeM HEFI 1897 Copyright 1997. Power Innovations Limited. UK OVERVOLTAGE PROTECTION FOR ERICSSON COMPONENTS LINE INTERFACE CIRCUITS • PBA 3357/3 DCLIC Overvoltage Protector


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    PDF B3612 RLM88 T-001089 R3612 TCM1060 R3612 1W1000 rca thyristor manual diode lt 341 RG35A "RCA Solid State thyristor