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    TRANSISTOR B43 Search Results

    TRANSISTOR B43 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B43 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		PDF AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2

    marking eb5

    Abstract: diode marking eb5 BSZ440N10NS3 i95B DS 654 5C
    Text: BSZ440N10NS3 G "%&$!"# 3 Power-Transistor Product Summary Features V 9H J Q . 5BI <? G 71D 5 3 81B 75 6? B8978 6B5AE5>3 I 1@@<931D9 ? >C R 9H"[Z#$YMd , Y" Q ( @D9=9J54 6? B43 43 3 ? >F5BC9? > I9 )0 6 Q ' 3 81>>5< >? B=1<<5F5< E=%IH9HDC%0 Q  H3 5<<5>D71D5 3 81B75 HR 9H"[Z# @B? 4E3 D ( & 


    Original     		PDF BSZ440N10NS3 65AE5 marking eb5 diode marking eb5 i95B DS 654 5C

    transistor B42

    Abstract: smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking
    Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB1475 Features Super miniature package. High DC current IC DC =500mA max. Low VCE(sat): VCE(sat)=-60mV at -100mA 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating


    Original     		PDF 2SB1475 500mA -60mV -100mA transistor B42 smd transistor b44 b42 smd transistor B42 350 MARKING SMD PNP TRANSISTOR 2a B44 transistor marking b42 marking B44 b42 transistor B43 marking

    BUK444-500B

    Abstract: transistor BUK444-500B transistor npc 231
    Text: N AUER PHILIPS/DISCRETE b^E » • bbSB'iBl D03D535 b43 « A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF BUK444-500B -SOT186 BUK444-500B transistor BUK444-500B transistor npc 231

    Untitled

    Abstract: No abstract text available
    Text: TRANSISTOR MODULES QCA200BA60 UL;E76102 M) is a dual Darlington power transistor module which has series-connected ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a reverse paral­ leled fast recovery diode ( t r r : 2 0 0 n s ). The mounting base of the


    OCR Scan     		PDF QCA200BA60 E76102 7T11243

    Untitled

    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE b'lE » bbSa'ni QQS^bHl OHS BLX95 IAPX A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transmitting applications in class-A, B or C in the u.h.f. frequency range fo r supply voltages up to 28 V. The transistor is resistance stabilized and is


    OCR Scan     		PDF BLX95 7Z66943

    typ71

    Abstract: 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331
    Text: N AMER PHILIPS/DISCRETE bSE D WË bbSSTSl □□21714 TTfl • APX BLY91C A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is guaran­


    OCR Scan     		PDF BLY91C 18-j20 OT-120. 7Z68946 7Z68948 typ71 71ti 71ti philips BLY91C RF POWER TRANSISTOR NPN vhf Transistor 5331

    BLY88C

    Abstract: lyp 809 BLY88 SOT122A TRANSISTOR 2X5
    Text: 711005b DQbBSÔT TIS « P H I N bSE D BLY88C/01 PHILIPS INTERNATIONAL V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 13,5 V . The transistor is resistance stabilized and is


    OCR Scan     		PDF BLY88C/01 BLY88C lyp 809 BLY88 SOT122A TRANSISTOR 2X5

    transistor B43

    Abstract: BUK454-600B T0220AB
    Text: bSE D PHILIPS INTERNATIONAL B TllOaSb OObHObb 67D • PHIN Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF 711062b 0Db40fc BUK454-600B T0220AB transistor B43 BUK454-600B

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		PDF 2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931

    Philips FA 564

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures


    OCR Scan     		PDF BFT93W OT323 BFT93W BFT93. MBC870 OT323. 711002b. Philips FA 564

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b=JE D bbS3T31 OGSfllHD 7D7 I IAPX 2N3904 SILICON PLANAR EPITAXIAL TRANSISTOR NPN transistor in a plastic TO-92 envelope, primarily intended for high-speed, saturated switching applications fo r industrial service. PNP complement is 2N3906.


    OCR Scan     		PDF bbS3T31 2N3904 2N3906.

    100-P

    Abstract: BUK454-600B T0220AB
    Text: bSE D PHILIPS INTERNATIONAL B TllDöSb OObHObb Ö7D « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in


    OCR Scan     		PDF BUK454-600B T0220AB 100-P

    NTE74C373

    Abstract: NTE74HC299 NTE74LS327 NTE74LS299 NTE74HC373
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74HC299, 20-Lead DIP, See Diag. 294 NTE74LS299 8-Bit Shift Register w/3-State Outputs so ri d et NTE74LS327 14-Lead DIP, See Diag. 247 Dual Voltage Controlled Oscillator NTE74LS352 16-Lead DI P, See Diag. 249


    OCR Scan     		PDF NTE74HC299, 20-Lead NTE74LS299 NTE74LS327 14-Lead NTE74LS352 16-Lead NTE74LS153) NTE74LS353 NTE74C373 NTE74HC299 NTE74LS327 NTE74LS299 NTE74HC373

    NTE7411

    Abstract: NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i 1 CLR § 3 1Q | ¡3


    OCR Scan     		PDF NTE74110 14-Lead NTE74111 16-Lead NTE74LS112A, NTE74S112 NTE74LS113, NTE74S113 NTE7411 NTE74LS123 NTE74LS113 NTE74123 nte74s124 NTE74121 NTE74LS11 TRANSISTOR D 1266 NTE74HC125 NTE74120

    74LS324

    Abstract: 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent
    Text: N T E ELECTRONICS INC 17E H ^3125=1 G0G513S Q B - o S V. ! - TRANSISTOR-TRANSISTOR LOGIC INCLUDES SERIES 74C CMOS NTE TYPE NO. •DESCRIPTION . 7214 7400 74C00 74H00 74LS00 74S00 3-State Sel/Mlpx Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos Quad 2-Input Pos


    OCR Scan     		PDF G0G513S 74C00 74H00 74LS00 74S00 74H01 74LS01 74C02 74LS02 74S02 74LS324 7400 TTL 74LS327 7402, 7404, 7408, 7432, 7400 80C96 74251 multiplexer 74C923 equivalent Flip-Flop 7473 74LS324 equivalent 74C08 equivalent

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED CIRCUITS - TTL TRANSISTOR TRANSISTOR LOGIC NTE74110 14-Lead DIP, See Diag. 247 AND Gated J -K Master/Slave Flip-Flop "/D ata Lockout NTE74111 16-Lead DIP, See Diag. 249 Dual J -K Flip-Flop Master/Slave "/D ata Lockout 1K r i §3 1 PR Q 1 CLR Vc c


    OCR Scan     		PDF NTE74110 14-Lead NTE74111 16-Lead NTE74LS113, NTE74S113 NTE74LS112A, NTE74S112

    AT-60500

    Abstract: AT60500 Hewlett-Packard AT60500
    Text: HEWLETT-PACKARD/ CMPNTS blE ThH% HEW LETT 1"KM PACKARD M 4 4 ? S a 4 DDD' i f l Sa AT-60500 Up to 6 GHz Low Noise Silicon Bipolar Transistor Chip D Chip Outline1 Features • • • • b43 Low Bias Current Operation Low Noise Figure: 1.8 dB typical at 2.0 GHz


    OCR Scan     		PDF AT-60500 AT60500 Hewlett-Packard AT60500

    La 7676

    Abstract: La 7676 data sheet marking b42 TC-2353 transistor B42 2SB1475 B44 transistor marking B44 marking B43 TRANSISTOR
    Text: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE 2SB1475 PIMP SILICON EPITAXIALTRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION 2SB1475 is designed fo r audio frequency amplifier and switching application, especially in VCR cameras and headphone stereos. FEATURES


    OCR Scan     		PDF 2SB1475 2SB1475 IEI-1209) La 7676 La 7676 data sheet marking b42 TC-2353 transistor B42 B44 transistor marking B44 marking B43 TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: Features RS2 Series • Compatible with TTL Gates • Push-on connector terminals • Mounts on a T03 transistor heat sink Printed Circuit Board Mountable Solid State Relay-7 Amp D37 -mm Input Specifications Control Voltage: RS2-1D7-33 . 5VDC


    OCR Scan     		PDF RS2-1D7-33 12VDC RS2-1D7-35 15mADC 16mSMax 2500VAC 500VDC) b4312S

    2SK2228

    Abstract: Transistor 3202 1 A 60
    Text: TO SH IBA SDOSSO T05H IBA FIELD EFFECT TRANSISTOR 2SK2228 QQE33Ô3 447 SILICON N CHANNEL M OS TYPE L2-tt-MOSIV 2SK2228 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND M OTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm


    OCR Scan     		PDF QQE33Ã 2SK2228 T05HIBA O-22QAB O-220 50URCE O-220FL 00E3b43 O-220SM Transistor 3202 1 A 60

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


    OCR Scan     		PDF

    BU506

    Abstract: BU506D specification of curve tracer 0Q7745H semiconductors AL3M
    Text: Philips Semiconductors Product specification Silicon diffused power transistors BU506; BU506D High-voltage, high-speed switching npn transistor in a plastic envelope intended fo r use in horizontal deflection circuits o f colour television receivers and fo r line operated switch-mode applications.


    OCR Scan     		PDF BU506; BU506D BU506D) 711002b 0Q7745H BU506 specification of curve tracer semiconductors AL3M

    Untitled

    Abstract: No abstract text available
    Text: ^ Philips Components Data sheet status Prelim inary specification date of issue March 1991 P H I L IP S N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies


    OCR Scan     		PDF BUK474-500B 7110fi2b -SOT186A