2N6449
Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Text: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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2N3821,
2N3822
2N3821
2N6449
MIXER U350
TR320
2N4861
2N4858A
2n4117 equivalent
J231 2N5461
2N6450
CD860
SMP5116
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J201 equivalent
Abstract: transistor j201 transistor b54 J201 J202 equivalent SMPJ202 J202 TRANSISTOR and gate J202 NJ16
Text: Databook.fxp 1/13/99 2:09 PM Page B-54 B-54 01/99 J201, J202 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ General Purpose Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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226AA
SMPJ201,
SMPJ202
J201 equivalent
transistor j201
transistor b54
J201
J202 equivalent
SMPJ202
J202 TRANSISTOR
and gate
J202
NJ16
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B52 transistor
Abstract: MARKING B52 b53 SMD transistor b54 2SB736A B53 transistor PT-200 2SD780A b54 marking B52 MARKING
Text: Transistors IC SMD Type PNP Silicon Epitaxial Transistor 2SB736A SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features High DC Current Gain: hFE = 200 TYP. VCE = -1.0 V, IC = -50 mA 1 0.55 Complementary to 2SD780A. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Micro package.
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2SB736A
OT-23
2SD780A.
B52 transistor
MARKING B52
b53 SMD
transistor b54
2SB736A
B53 transistor
PT-200
2SD780A
b54 marking
B52 MARKING
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2n4117 equivalent
Abstract: transistor j210 J231 transistor 2N4119 2N4119A J231 2N5461 2N4339 2N4868A J210 SMP4869A
Text: Databook.fxp 1/13/99 2:09 PM Page B-9 B-9 01/99 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119A N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Audio Amplifiers ¥ Ultra-High Input Impedance Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage
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2N4117,
2N4117A,
2N4118,
2N4118A,
2N4119,
2N4119A
2N4117
2N4117A
2N4118
2N4118A
2n4117 equivalent
transistor j210
J231 transistor
2N4119
2N4119A
J231 2N5461
2N4339
2N4868A
J210
SMP4869A
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la 4440 amplifier circuit diagram 300 watt
Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Text: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode
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AN-784A
la 4440 amplifier circuit diagram 300 watt
la 4440 amplifier circuit diagram 300 watt
diode LT 7229
2sd323
YM 7137 3D
DA 3807 pdf transistor
inverter welder 4 schematic
2N5630
THYRISTOR br 403
1N3492
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Untitled
Abstract: No abstract text available
Text: TRANSISTOR MODULE SQD300AA120 UL;E 76102 M S Q D 3 0 0 A A 1 2 0 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for
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SQD300AA120
DDD2213
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b^E D • bbSS^Sl QQ 3 Q 337 b54 « A P X Philips Semiconductors Product Specification PowerMOS transistor BUK100-50GL Logic level DESCRIPTION Monolithic temperature and overioa<y>rotected logic level power
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BUK100-50GL
Q03034S
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PDF
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BLW90
Abstract: fi37
Text: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and
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BLW90
BLW90
fi37
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PDF
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marking g1
Abstract: marking HA 7 sot23 transistor bfs20 BFS20
Text: rZ 7 SGS-THOMSON WiCTOOieS BFS20 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS20 G1 . SILICON EPITAXIAL PLANAR NPN TRANSISTORS . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . COMMON EMITTER IF AMPLIFIER SOT-23 ABSOLUTE MAXIMUM RATINGS
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BFS20
OT-23
OT-23
marking g1
marking HA 7 sot23
transistor bfs20
BFS20
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PDF
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transistor b54
Abstract: 2N7052 2N7053 NZT7053 small signal transistor
Text: 2N7052 12N7053 / NZT7053 _ National Discrete POWER & Signal Technologies <ß Semiconductor'" 2N7052 2N7053 NZT7053 SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage.
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NZT7053
OT-223
004074b
bSD1130
transistor b54
2N7052
2N7053
NZT7053
small signal transistor
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BD939F
Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
Text: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.
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BD933F;
BD935F
BD937F;
BD939F
BD941F-
BD934F,
BD936F,
BD938F,
BD940F
BD942F.
BD939F
941f
BD936F
935F
BD933F
BD934F
BD935F
BD937F
BD938F
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PDF
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Untitled
Abstract: No abstract text available
Text: P D - 9.1627 International IO R Rectifier IRG4ZH70UD PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Surface Mountable UltraFast CoPack IGBT • UltraFast IGBT optimized for high switching frequencies • IGBT co-packaged with HEXFRED ultrafast,
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IRG4ZH70UD
SMD-10
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BFS55A
Abstract: Bfs 60 60dBi transistor b54
Text: SIEMENS BFS 55A NPN Silicon RF Transistor • For low-distortion broadband amplifiers up 1 at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFS 55A BFS 55A Q62702-F454
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Q62702-F454
0Db7431
EHT08056
EHT03057
235fc
BFS55A
Bfs 60
60dBi
transistor b54
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Untitled
Abstract: No abstract text available
Text: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz
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F10150H/D
MRF10150H'
MRF10150HX
MRF10150HXV
MRF10150HS
MRF10150HC
376B-02
1PHX31252-1
MRF10150H/D
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BT 1840 PA
Abstract: No abstract text available
Text: • Philips Semiconductors ^ ■ APX bb53T31 0024641 350 ■ N AUER PHI LIP S/DISCRETE NPN 8 GHz wideband transistor FEATURES Product specification b7E — BFG67; BFG67/X; BFG67R; BFG67/XR ■ PINNING 4 PIN 3 DESCRIPTION • High power gain • Low noise figure
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bb53T31
BFG67;
BFG67/X;
BFG67R;
BFG67/XR
BFG67
BFG67/X
BFG67
OT143
BFG67)
BT 1840 PA
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PDF
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Untitled
Abstract: No abstract text available
Text: NPN Photo Transistor TPS611 A pplications • Photo Sensor • Photoelectric Counter • Various Kinds of Readers • Position Detection • Remote Controls Features • 05mm Epoxy Resin Package • High Sensitivity: lL= 120pA Typ. • Half Value Angle: 01/2= ± 8° (Typ.)
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TPS611
120pA
TLN110
TLN205
98-4LEDS
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Untitled
Abstract: No abstract text available
Text: PNP medium power transistor Die no. B-54 These are epitaxial planar PNP silicon transistors. Features • available in a MPT3 MPT, SOT-89 package, see page 300 • collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at lc = 1 mA • • Dimensions (Units : mm)
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OT-89)
BCX53
I70CP-C0LLECT0R
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TRANSISTOR D54
Abstract: d54 marking TRANSISTOR B54
Text: NPN medium power transistor Die no. D-54 These are epitaxial planar NPN silicon transistors. Dimensions Units : mm MPT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 I1.5( — TY ‘ 0.1 collector-to-emitter breakdown voltage, BVCE0 = 80 V (min) at
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OT-89)
BCX56
BCX53,
TRANSISTOR D54
d54 marking
TRANSISTOR B54
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JE1100
Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices
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transistor b54
Abstract: b54 marking
Text: PNP medium power transistor Die no. B-54 Dimensions Units : mm These are epitaxial planar PNP silicon transistors. MPT3 Features • • • available in a MPT3 (MPT, SOT-89) package, see page 300 1.6 ± 0 .1 -m collector-to-emitter breakdown voltage, BVCEO = 80 V (min) at
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OT-89)
BCX53
BCX56,
170CP-C0LLECT0R
transistor b54
b54 marking
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PDF
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equivalent transistor c 5888
Abstract: C - 4834 transistor tms 3615 transistor BF 697 Philips FA 291 LMT 4585 2857 M 730 transistor LMT 393 N 43t SOT323 lmt 393
Text: IH bb53T31 DQ2531& 350 ^ l A P X Philips Sem iconductors • Product s p e c ific a tio n N AHER PHILIPS/DISCRETE b7E NPN 9 GHz wideband transistor FEATURES BFS520 PINNING • High power gain PIN CONFIGURATION PIN • Low noise figure DESCRIPTION Code: N2
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BFS520
OT323
MBC67
OT323.
equivalent transistor c 5888
C - 4834 transistor
tms 3615
transistor BF 697
Philips FA 291
LMT 4585
2857 M 730 transistor
LMT 393 N
43t SOT323
lmt 393
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PDF
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transistor b985
Abstract: transistor b544 transistor b764 D1111 TRANSISTOR C3117 TRANSISTOR D1153 transistor D1207 TRANSISTOR D1347 transistor D863 B892
Text: SAfÊYO PCP Power Chip Pack Transistor Series ale, F e a t u r e s ♦ Very small size making it possible to provide high-densi ty. small-sized hybrid lCs. ♦ Various packing of devices are available to meet automatic assembly requirements. ♦ High reliability and stable quality.
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250mm!
2SA1882/2SC4984
2SB1118/2SD1618
2SB1119/2SD1619
2SB1120
2SD1620
2SB1121/2SD1621
2SB1122/2SD1622
2SB1123/2SD1623
2SB1124/2SD1624
transistor b985
transistor b544
transistor b764
D1111 TRANSISTOR
C3117 TRANSISTOR
D1153
transistor D1207
TRANSISTOR D1347
transistor D863
B892
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Untitled
Abstract: No abstract text available
Text: Die no. D-54 NPN medium power transistor These are epitaxial planar NPN silicon transistors. Dimensions Units : mm M PT3 Features available in a MPT3 (MPT, SOT-89) package, see page 300 4 . 5 —o ) I l .6 ± 0 .l 1 .5 -0 .1 ~ ,m collector-to-emitter breakdown
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OT-89)
BCX56
BCX53,
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Untitled
Abstract: No abstract text available
Text: S GS-THOMSON sgaMiLaCTtæratgs STP4NA80 STP4NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE I STP4NA80 STP4NA80FI • . ■ ■ . . . V dss R DS on Id 800 V 800 V <30 < 3 n A 2.5 A 4 TYPICAL Ros(on) = 2.4 Q ±30V GATE TO SOURCE VOLTAGE RATING
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STP4NA80
STP4NA80FI
STF4NA80/FI
00b2D50
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