TRANSISTOR B712 Search Results

TRANSISTOR B712 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

TRANSISTOR B712 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7128 AWB7128	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
Untitled Abstract: No abstract text available Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.3 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127	PDF
Untitled Abstract: No abstract text available Text: AWB7122 1805 MHz to 1880 MHz Small-Cell Power Amplifier Module preliminary data sheet - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7122 AWB7122	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
Untitled Abstract: No abstract text available Text: AWB7122 1805 MHz to 1880 MHz Small-Cell Power Amplifier Module preliminary data sheet - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7122 AWB7122	PDF
AWB7127 Abstract: AWB7127HM41P8 Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127 AWB7127HM41P8	PDF
K 2545 transistor Abstract: transistor k 2545 Text: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7128 AWB7128 K 2545 transistor transistor k 2545	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module ADVANCED PRODUCT INFORMATION - Rev 0.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.4 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Ampliier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
Untitled Abstract: No abstract text available Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Ampliier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127	PDF
Untitled Abstract: No abstract text available Text: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Ampliier Module PRELIMINARY DATA SHEET - Rev 1.3 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Eficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7128 AWB7128	PDF

Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.2 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
Untitled Abstract: No abstract text available Text: AWB7128 2.545 GHz through 2.69 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 28 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7128 AWB7128	PDF
Untitled Abstract: No abstract text available Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127	PDF
AWB7127 Abstract: AWB7127HM41P8 Text: AWB7127 2.11 GHz through 2.17 GHZ Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127 AWB7127HM41P8	PDF
Untitled Abstract: No abstract text available Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.4 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 32 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123	PDF
Untitled Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module DATA SHEET - Rev 2.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125	PDF
AWB7 Abstract: No abstract text available Text: AWB7125 860 MHz to 894 MHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -47 dBc ACPR @ + 10 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7125 AWB7125 AWB7	PDF
AWB7127 Abstract: AWB7127HM41P8 Text: AWB7127 2.11 GHz through 2.17 GHz Small-Cell Power Amplifier Module Data Sheet - Rev 2.1 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally matched for a 50 Ω System	Original	AWB7127 AWB7127 AWB7127HM41P8	PDF
AWB7123 Abstract: AWB7123HM41P8 Text: AWB7123 1.93 GHz through 1.99 GHz Small-Cell Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • -50 dBc ACPR @ + 5 MHz, +24.5 dBm • 30 dB Gain • High Efficiency • Low Transistor Junction Temperature • Internally Matched for a 50 Ω System	Original	AWB7123 AWB7123 AWB7123HM41P8	PDF
equivalent transistor TT 3034 Abstract: transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718 Text: DTA/DTB/DTC/DTD DIGITAL TRANSISTOR APPLICATION: • EQUIVALENT CIRCUITS: Inverter, Driver & Interface Circuits FEATURES: • Replaces up to three parts 1 transistor & 2 resis tors with one part • Available in a variety of surface mount or leaded (thru-hole) packages	OCR Scan	-335/H-135/D-40 -334/H-280/D-41 -334/H-280/D-41 -334/H-28Q/D-41 L-56SW-42/H-115 L-565/W-42/H-12 OT-23, SC-59 equivalent transistor TT 3034 transistor TT 3034 D718 transistor D718 equivalent transistor a769 TT 3034 transistor transistor d718 d718* transistor k d718 D718	PDF

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TRANSISTOR B712 Search Results

TRANSISTOR B712 Result Highlights (5)

TRANSISTOR B712 Datasheets Context Search

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AWB7127

K 2545 transistor

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AWB7127

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AWB7

AWB7127

AWB7123

equivalent transistor TT 3034