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    TRANSISTOR B754 Search Results

    TRANSISTOR B754 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TRANSISTOR B754 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    c5088 transistor

    Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
    Text: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154


    Original     		PDF 1853IMPATT c5088 transistor transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N

    MSM511665-10

    Abstract: MSM511665-80
    Text: 5ÔE D O K I m b754240 0012^40 SEMICONDUCTOR 3^7 « O K I J GROUP O K I sem iconductor M SM 511665 z^s-H 65,536-W O R D x 16-BIT DYN A M IC RAM GENERAL DESCRIPTION The M SM511665 is a new generation dynamic RAM organized as 65,536 words x 16 bits. The technology used to fabricate the MSM511665 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF b724240 MSM511665 536-WORD 16-BIT MSM511665 W15/I015 Lj7BM240 MSM511665' VOH-W15/1015 MSM511665-10 MSM511665-80

    MSM411001-10RS

    Abstract: MSM411001-12RS
    Text: O K I S EM I CO ND U CT OR GROUP ûi 6724240 0 K I SEM IC O N D U C TO R GROUP _ O K I D É b754S4D □OOSSTS 3 89D 0 2 5 9 2 D 7 - V i -¿ > 3 - / s ' _ semiconductor MSM4 1 1 0 0 1 RS_ 1,048,576-BIT DYNAMIC RANDOM ACCESS MEMORY < Nibble Mode Type >


    OCR Scan     		PDF b754S4D MSM411001 576-BIT MSM411001-10RS MSM411001-12RS

    Untitled

    Abstract: No abstract text available
    Text: O K I electronic components OCS37 Optical PNPN Switches GENERAL DESCRIPTION The OCS37 is an opto coupler, combining a GaAs infrared light emitting diode and a silicon PN PN photo sensor in a two-channel configuration. Encased in a 6-pin plastic package, the device is capable


    OCR Scan     		PDF OCS37 OCS37 b754240 OD44L

    e33a

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17190 576-Word 18-Bit MSM51V17190 2048cycles/32m e33a

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117190 576-Word 18-Bit MSM5117190 cycles/32ms Bv 42 transistor tsop50 42-PIN MSM5117190-70 MSM5117190-80 SOJ42-P-400

    A5 GNC

    Abstract: TSOP32-P-4QO-K 51V17400 5116100
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64m A5 GNC TSOP32-P-4QO-K 51V17400 5116100

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms

    Bv 42 transistor

    Abstract: tsop50 42-PIN MSM5116190-70 MSM5116190-80
    Text: O K I Semiconductor MSM5 1 16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5116190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116190 576-Word 18-Bit MSM5116190 cycles/64ms Bv 42 transistor tsop50 42-PIN MSM5116190-70 MSM5116190-80

    Bv 42 transistor

    Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
    Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16190 576-Word 18-Bit MSM51V16190 cycles/64ms Bv 42 transistor M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K

    uras 4

    Abstract: uras 2 5116100
    Text: OKI Semiconductor MSM5117190 1,048,576-Word x 18-Bit D Y N A M IC RA M : FAST P AG E M O D E TYPE DESCRIPTION The MSM5117190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM5117190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117190 576-Word 18-Bit MSM5117190 cycles/32m uras 4 uras 2 5116100

    Bv 42 transistor

    Abstract: CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100
    Text: O K I Semiconductor M SM 51V17190_ 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V17190 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17190_ 576-Word 18-Bit MSM51V17190 cycles/32ms Bv 42 transistor CI 576 tsop50 42-PIN MSM51V17190-70 MSM51V17190-80 oki Package SOJ Scans-0053100

    Untitled

    Abstract: No abstract text available
    Text: OKI Semiconductor MSM6234 DTMF Tone Dialer LSI G EN ER A L D ESCRIPTIO N The MSM6234 is a tone dialer LSI which is fabricated by Oki's low power consumption CMOS silicon gate technology. The MSM6234can generate 16 DTMF Dual Tone Multi Frequency signals which consists of 4 higher


    OCR Scan     		PDF MSM6234 MSM6234 MSM6234can 16-pin DIP16-P-300) MSM6234RS) 00B21A4 b724240

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 14800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D E S C R IP T IO N The M SM514800A/ ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the M SM514800A/ASL is OKI's CMOS silicon gate process


    OCR Scan     		PDF 4800A/ASL 288-Word SM514800A/ SM514800A/ASL cycles/16m cycles/128ms b7E4240 MSM514800A/ASL

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor M SM 514800A/ASL 524,288-Word x 8-Bit DYNAMIC RAM D ESCR IPTIO N The M SM514800A/ASL is a new generation dynamic RAM organized as 524,288-word x 8-bit. The technology used to fabricate the MSM514800A/ASL is OKI's CMOS silicon gate process


    OCR Scan     		PDF MSM514800A/ASL 288-Word MSM514800A/ASL cycles/16ms, cycles/128ms b7E4240 MSM514800A/AS

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16800_ 152-Word MSM51V16800 cycles/64ms GQ174bt. MSM51V16800 724E4D

    A11E

    Abstract: A1E transistor
    Text: O K I Semiconductor MSM5116100_ 16,777,216-Word x 1-Bit DYNAM IC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116100 is a new generation dynamic organized as 16,777,216 word x 1-bit. The technology used to fabricate the MSM5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100_ 216-Word MSM5116100 cycles/64ms A0-A11 MSM5116100 A11E A1E transistor

    MSM51V17800

    Abstract: J00j
    Text: O K I Semiconductor MSM5 1 V17800_ 2,097,152-Word x 8-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V17800 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V17800_ 152-Word MSM51V17800 cycles/32ms 51V17800 GD174Ã MSM51V17800 J00j

    transistor sl 431

    Abstract: ZIP40-P-475
    Text: O K I Sem iconductor M S M 5 1 4 1 9 0 / S L _ 262,144-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM514190/SL is a new generation Dynamic RAM organized as 262,144-word x 18-bit configuration. The technology used to fabricate theMSM51419 0 /SL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514190/SL_ 144-Word 18-Bit MSM514190/SL theMSM514190/SL cycles/16ms, transistor sl 431 ZIP40-P-475

    T02I

    Abstract: 26-PIN ZIP20-P-400 514100B
    Text: O K I Semiconductor MSM5 1 4 1 OOB/BL 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE DESCRIPTION The MSM514100B/BL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100B/BL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514100B MSM514100BL 304-Word MSM514100B/BL cycles/16ms, cycles/128ms 2424G T02I 26-PIN ZIP20-P-400 514100B

    transistor a7g

    Abstract: a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80
    Text: SÔE T> • h?2424D DDIHT?! Tb3 « O K I J 0 « I SEMICONDUCTOR GROUP O K I s e m ic o n d u c to r - r - H t - z s - i s M S M 514101 4,194,304-Word x 1-Bit DYNAMIC RAM: NIBBLE MODE TYPE GENERAL DESCRIPTION The MSM514101 is a new generation dynamic RAM organized as 4,194,304-word x1 -bit.


    OCR Scan     		PDF MSM514101_ 304-Word MSM514101 26-pin 20-pin 18-pin --MSM514101. transistor a7g a105g MSM temperature spec til 31a MSM514101-10 MSM514101-70 MSM514101-80

    MSM51V16100

    Abstract: 2M2H
    Text: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM51V16100_ 216-Word MSM51V16100 MSM51VI6100 cycles/64ms 72M2MD 0D173Ã MSM51V16100 2M2H

    514402A

    Abstract: 26-PIN ZIP20-P-400-W1 5V110 5424G
    Text: O K I S em iconductor M SM 514402A /A L_ 1,048,576-Word x 4-B it DYNAMIC RAM : STATIC COLUMN MODE TYPE DESCRIPTION The MSM514402A/AL is a new generation dynamic RAM organized as 1,048,576-word x 4-bit. The technology used to fabricate the MSM514402A/AL is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM514402A/AL_ 576-Word MSM514402A/AL cycles/16ms, cycles/128ms MSM514402A/AL b7SM24D 514402A 26-PIN ZIP20-P-400-W1 5V110 5424G

    DD1750

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5117900 152-Word 152-w cycles/32m 32PIN SOJ32-P-4QO 42PIN SOJ42-P-400 b754240 DD1750